公开(公告)号：US08101522B2

公开(公告)日：2012-01-24

申请号：US12713094

申请日：2010-02-25

Applicant: Ching-Fuh Lin ,  Shu-Jia Syu

Inventor： Ching-Fuh Lin ,  Shu-Jia Syu

IPC: H01L21/302

CPC classification number: H01L21/0337 ,  H01L29/0665

Abstract: A method for forming a silicon substrate having a multiple silicon nanostructures includes the steps of: providing a silicon substrate; forming an oxidization layer on the silicon substrate; immersing the silicon substrate in a fluoride solution including metal ions, thereby depositing a plurality of metal nanostructures on the silicon substrate; and immersing the silicon substrate in an etching solution to etch the silicon under the metal nanostructures, the unetched silicon forming the silicon nanostructures.

Abstract translation: 一种形成具有多个硅纳米结构的硅衬底的方法包括以下步骤：提供硅衬底; 在硅衬底上形成氧化层; 将硅衬底浸入包含金属离子的氟化物溶液中，从而在硅衬底上沉积多个金属纳米结构; 并将硅衬底浸入蚀刻溶液中以蚀刻金属纳米结构下的硅，未蚀刻的硅形成硅纳米结构。

公开(公告)号：US20110240996A1

公开(公告)日：2011-10-06

申请号：US13160450

申请日：2011-06-14

Applicant: CHING-FUH LIN ,  JING-SHUN HUANG ,  JIAN-LIN CHIU

Inventor： CHING-FUH LIN ,  JING-SHUN HUANG ,  JIAN-LIN CHIU

IPC: H01L31/0224 ,  H01L29/12 ,  H01L33/02 ,  H01L31/0264 ,  H01L51/44 ,  H01L33/62

CPC classification number: H01L51/5048 ,  H01L2251/5369 ,  H05B33/12

Abstract: Embodiments of this invention disclose optoelectronic devices and their producing methods. The embodiments employ solution processes to produce p-type transition metal oxide layer, active layer, and n-type transition metal oxide layer of the optoelectronic devices. The p-type transition metal oxide layer comprises a copper oxide (CuO) layer or a nickel oxide (NiO) layer or a mixing layer, which comprises CuO or NiO mixed with an n-type transition metal oxide.

Abstract translation: 本发明的实施例公开了光电器件及其制造方法。 实施例采用溶液工艺来生产光电器件的p型过渡金属氧化物层，有源层和n型过渡金属氧化物层。 p型过渡金属氧化物层包括氧化铜（CuO）层或氧化镍（NiO）层或混合层，其包含与n型过渡金属氧化物混合的CuO或NiO。

公开(公告)号：US20110204489A1

公开(公告)日：2011-08-25

申请号：US12713094

申请日：2010-02-25

Applicant: CHING-FUH LIN ,  SHU-JIA SYU

Inventor： CHING-FUH LIN ,  SHU-JIA SYU

IPC: H01L29/06 ,  H01L21/20

CPC classification number: H01L21/0337 ,  H01L29/0665

Abstract: A method for forming a silicon substrate having a multiple silicon nanostructures includes the steps of: providing a silicon substrate; forming an oxidization layer on the silicon substrate; immersing the silicon substrate in a fluoride solution including metal ions, thereby depositing a plurality of metal nanostructures on the silicon substrate; and immersing the silicon substrate in an etching solution to etch the silicon under the metal nanostructures, the unetched silicon forming the silicon nano structures.

Abstract translation: 一种形成具有多个硅纳米结构的硅衬底的方法包括以下步骤：提供硅衬底; 在硅衬底上形成氧化层; 将硅衬底浸入包含金属离子的氟化物溶液中，从而在硅衬底上沉积多个金属纳米结构; 并且将硅衬底浸入蚀刻溶液中以在金属纳米结构下蚀刻硅，未蚀刻的硅形成硅纳米结构。

公开(公告)号：US20110048538A1

公开(公告)日：2011-03-03

申请号：US12574697

申请日：2009-10-06

Applicant: JING-SHUN HUANG ,  CHING-FUH LIN

Inventor： JING-SHUN HUANG ,  CHING-FUH LIN

IPC: H01L51/30 ,  H01L31/0264 ,  B05D5/06 ,  H01B1/08 ,  H01B1/20 ,  H01L51/40

CPC classification number: H01L51/441 ,  H01L51/5088 ,  H01L51/5092 ,  Y02E10/549 ,  Y02P70/521

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract translation: 公开了一种用于有机光电子器件的悬浮液或溶液。 悬浮液或溶液的组成包括至少一种微/纳米过渡金属氧化物和溶剂。 悬浮液或溶液的组成可以选择性地包括至少一种过渡金属氧化物离子或过渡金属氧化物的前体。 此外，还公开了制备和应用悬浮液或溶液的方法。

公开(公告)号：US06838816B2

公开(公告)日：2005-01-04

申请号：US10159255

申请日：2002-06-03

Applicant: Wei-Fang Su ,  Ching-Fuh Lin

Inventor： Wei-Fang Su ,  Ching-Fuh Lin

IPC: B81B1/00 ,  B82B1/00 ,  C09K11/06 ,  C09K11/56 ,  H01L33/08 ,  H01L33/28 ,  H01L51/50 ,  H05B33/02 ,  H05B33/14 ,  H05B33/26 ,  H01J1/62

CPC classification number: H01L33/08 ,  H01L33/28 ,  Y10S362/80

Abstract: The present invention discloses a simple, low cost method to fabricate light emitting source using luminescent colloid nanoparticles. It uses monodispersed colloid light emitting nanoparticles of oxides, semiconductors, and polymers to fabricate high quality, narrow bandwidth light emitting source. The colloid particles can be dispersed homogeneously in liquid that can be coated easily on a substrate using a simple coating method such as spray, dip coating or spin coating. There is no restriction on the size or shape of the substrate. Therefore, a low cost, large area, high efficiency and reproducible light emitting source can be made easily.

Abstract translation: 本发明公开了一种使用发光胶体纳米粒子制造发光源的简单，低成本的方法。 它使用氧化物，半导体和聚合物的单分散胶体发光纳米颗粒来制造高质量，窄带宽的发光源。 胶体颗粒可以均匀地分散在液体中，可以使用简单的涂布方法如喷涂，浸涂或旋涂将其容易地涂布在基材上。 对基板的尺寸或形状没有限制。 因此，可以容易地实现低成本，大面积，高效率和可再现的发光源。

公开(公告)号：US06812729B2

公开(公告)日：2004-11-02

申请号：US10175720

申请日：2002-06-19

Applicant: Miin-Jang Chen ,  Ching-Fuh Lin ,  Chee-Wee Liu ,  Min-Hung Lee ,  Shu-Tong Chang

Inventor： Miin-Jang Chen ,  Ching-Fuh Lin ,  Chee-Wee Liu ,  Min-Hung Lee ,  Shu-Tong Chang

IPC: G01R3126

CPC classification number: G01R31/311 ,  G01R31/2656

Abstract: A method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device includes the steps of: applying at least one current to the MOS device through the gate; detecting at least one electroluminescent signal corresponding to the silicon bandgap energy after the current flows through the MOS device; and outputting the electroluminescent waveform in the time domain. The quality of the interface between a silicon and a gate insulator in the MOS device is determined by analyzing the minority carrier lifetime in silicon. The invention also discloses a characterization system for implementing the method.

Abstract translation: 用于表征MOS器件中的硅和栅极绝缘体之间的界面的质量的方法包括以下步骤：通过栅极将至少一个电流施加到MOS器件; 在电流流过MOS器件之后检测至少一个对应于硅带隙能量的电致发光信号; 并在时域中输出电致发光波形。 通过分析硅中的少数载流子寿命来确定MOS器件中的硅和栅极绝缘体之间的界面的质量。 本发明还公开了一种用于实现该方法的表征系统。

公开(公告)号：US08889017B2

公开(公告)日：2014-11-18

申请号：US13458900

申请日：2012-04-27

Applicant: Ching-Fuh Lin ,  Shih-Che Hung ,  Shu-Jia Syu

Inventor： Ching-Fuh Lin ,  Shih-Che Hung ,  Shu-Jia Syu

IPC: H01L21/02 ,  G02B6/136 ,  G02B6/12

CPC classification number: G02B6/136 ,  G02B2006/12061 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02675

Abstract: The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.

Abstract translation: 本发明涉及一种在非SOI衬底（非硅绝缘体衬底）上制造硅波导的方法，特别涉及一种用激光在硅衬底上制造硅波导的方法。 该方法包括以下步骤：（1）在非SOI衬底上形成具有高纵横比的脊结构; （2）通过激光照射熔化并重新形成脊状结构，形成具有宽的上部和下部的结构的结构; 和（3）氧化具有宽的上部和较窄的下部的结构以形成硅波导。

公开(公告)号：US20130143407A1

公开(公告)日：2013-06-06

申请号：US13414355

申请日：2012-03-07

Applicant: CHING-FUH LIN ,  TZU-CHING LIN ,  SHU-JIA SYU

Inventor： CHING-FUH LIN ,  TZU-CHING LIN ,  SHU-JIA SYU

IPC: H01L21/311 ,  B82Y40/00

CPC classification number: B81C99/008 ,  B81B2207/056 ,  B81C1/0038 ,  B81C2201/0194

Abstract: The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.

Abstract translation: 本发明涉及一种具有大表面积的薄单晶硅的制造方法，特别涉及在硅衬底（或晶片）上制造硅微结构和纳米结构的方法，并将硅微结构和纳米结构从 硅衬底（或晶片）。 在该方法中，通过在硅晶片上沉积金属催化剂，垂直蚀刻衬底，横向蚀刻衬底的步骤，简单地从衬底中提取和转移硅微结构和纳米结构的薄单晶硅。 然后，处理衬底的表面，例如平坦化衬底的表面，以再循环衬底以重复制造薄的单晶硅。 因此，可以充分利用基板，可以实现成本降低的目的，并且可以提高应用。

公开(公告)号：US08378337B2

公开(公告)日：2013-02-19

申请号：US12612670

申请日：2009-11-04

Applicant: Ching-Fuh Lin ,  Kao-Hua Tsai

Inventor： Ching-Fuh Lin ,  Kao-Hua Tsai

IPC: H01L51/54

CPC classification number: H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/4213 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.

Abstract translation: 公开了一种具有反向电极结构的柔性光电器件。 具有反转电极结构的柔性光电子器件包括具有阴极结构的柔性塑料基板，n型氧化物半导体层，有机层和阳极。 n型氧化物半导体层设置在阴极结构上。 有机层配置在n型氧化物半导体层上。 阳极与有机层电连接。

公开(公告)号：US08334216B2

公开(公告)日：2012-12-18

申请号：US12790331

申请日：2010-05-28

Applicant: Ching-Fuh Lin ,  Shu-Jia Syu

Inventor： Ching-Fuh Lin ,  Shu-Jia Syu

IPC: H01L21/302

CPC classification number: H01L21/306 ,  H01L29/06

Abstract: The present invention provides silicon nanostructures and their producing method. By employing a metal-assisted chemical etching method, the bottom of the produced silicon nanostructures, connected to the silicon substrate, is porous and side etched, such that the silicon nanostructures can be easily transferred to a hetero-substrate by a physical manner.

Abstract translation: 本发明提供硅纳米结构及其制备方法。 通过采用金属辅助化学蚀刻方法，连接到硅衬底的所生成的硅纳米结构的底部是多孔的并且被侧蚀刻，使得硅纳米结构可以通过物理方式容易地转移到异质衬底。