公开(公告)号：US20080283180A1

公开(公告)日：2008-11-20

申请号：US12112925

申请日：2008-04-30

Applicant: Mark Bachman ,  Guann-Pyng Li

Inventor： Mark Bachman ,  Guann-Pyng Li

IPC: B32B37/02 ,  H01B13/00

CPC classification number: B32B37/02 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C1/00182 ,  B81C1/00253 ,  Y10T156/10 ,  Y10T156/1043

Abstract: Systems and methods for producing micromachined devices, including sensors, actuators, optics, fluidics, and mechanical assemblies, using manufacturing techniques of lead frames, substrates, microelectronic packages, printed circuit boards, flex circuits, and rigid-flex materials. Preferred embodiments comprise using methods from post-semiconductor manufacturing to produce three-dimensional and free-standing structures in non-semiconductor materials. The resulting devices may remain part of the substrate, board or lead frame which can then used as a substrate for further packaging electronic assembly operations. Alternatively, the devices may be used as final components that can be assembled within other devices.

Abstract translation: 使用引线框架，衬底，微电子封装，印刷电路板，柔性电路和刚性 - 柔性材料的制造技术来生产微加工器件的系统和方法，包括传感器，致动器，光学器件，流体学和机械组件。 优选实施例包括使用后半导体制造中的方法，以在非半导体材料中制造三维和独立结构。 所得到的装置可以保持为基板，板或引线框架的一部分，然后可以将其用作用于进一步封装电子组装操作的基板。 或者，装置可以用作可以在其他装置内组装的最终部件。

公开(公告)号：US07425871B2

公开(公告)日：2008-09-16

申请号：US11087068

申请日：2005-03-21

Applicant: Huai Gao ,  Haitao Zhang ,  Huinan Guan ,  Guann-Pyng Li

Inventor： Huai Gao ,  Haitao Zhang ,  Huinan Guan ,  Guann-Pyng Li

IPC: H03F1/30

CPC classification number: H03F1/52

Abstract: The systems and methods described herein provide for composite transistor circuit having a bipolar transistor and a compensation unit. The compensation unit can be configured to stabilize the DC biasing point of the bipolar transistor. The compensation unit can compensate for the self-heating effect in the bipolar transistor and/or improve the linear performance of the bipolar transistor. The compensation unit can include a nonlinear resistor in series with a switch and can be configured to increase the base current into the bipolar transistor as the output voltage of the circuit increases.

Abstract translation: 本文所述的系统和方法提供了具有双极晶体管和补偿单元的复合晶体管电路。 补偿单元可被配置为稳定双极晶体管的直流偏置点。 补偿单元可以补偿双极晶体管中的自发热效应和/或改善双极晶体管的线性性能。 补偿单元可以包括与开关串联的非线性电阻器，并且可以被配置成随着电路的输出电压增加而增加进入双极晶体管的基极电流。

公开(公告)号：US20080129426A1

公开(公告)日：2008-06-05

申请号：US11849914

申请日：2007-09-04

Applicant: Jiangyuan Qian ,  Hung-Pin Chang ,  Bedri A. Cetiner ,  Mark Bachman ,  Franco DeFlaviis ,  Guann-Pyng Li

Inventor： Jiangyuan Qian ,  Hung-Pin Chang ,  Bedri A. Cetiner ,  Mark Bachman ,  Franco DeFlaviis ,  Guann-Pyng Li

IPC: H01P1/10

CPC classification number: H01H59/0009 ,  H01G5/16 ,  H01G5/40 ,  H01H2001/0084 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

公开(公告)号：US07280332B2

公开(公告)日：2007-10-09

申请号：US10501651

申请日：2003-01-16

Applicant: Yin Tat Ma ,  Guann-Pyng Li

Inventor： Yin Tat Ma ,  Guann-Pyng Li

IPC: H02H3/20 ,  H02H9/04

CPC classification number: H01L27/0255 ,  H01L27/0259

Abstract: A low loading capacitance on-chip electrostatic discharge (ESD) protection circuit for compound semiconductor power amplifiers is disclosed, which does not degrade the circuit RF performance. Its principle of operation and simulation results regarding capacitance loading, leakage current, degradation to RF performance are disclosed. The design, loading effect over frequency, robustness over process and temperature variation and application to an RF Power amplifier is presented in detail. The ESD circuit couples an input to ground during ESD surges through a diode string coupled to the input, and a transistor switch or Darlington pair having its gate coupled to and triggered by the diode string. The Darlington pair couples the input to ground when triggered through a low impedance path in parallel to the diode string. A reverse diode also couples ground to the input on reverse surges.

Abstract translation: 公开了用于复合半导体功率放大器的低负载电容片上静电放电（ESD）保护电路，其不会降低电路RF性能。 公开了其关于电容负载，漏电流，RF性能劣化的操作和仿真结果原理。 详细介绍了频率的设计，负载效应，过程的鲁棒性和温度变化以及RF功率放大器的应用。 ESD电路在ESD浪涌期间通过耦合到输入的二极管串耦合输入到地，以及晶体管开关或达林顿对，其栅极耦合到二极管串并由二极管串触发。 当通过与二极管串并联的低阻抗路径触发时，达林顿对将输入耦合到地。 反向二极管也将接地连接到反向浪涌的输入。

公开(公告)号：US07265647B2

公开(公告)日：2007-09-04

申请号：US11080112

申请日：2005-03-14

Applicant: Jiangyuan Qian ,  Hung-Pin Chang ,  Bedri A. Cetiner ,  Mark Bachman ,  Franco DeFlaviis ,  Guann-Pyng Li

Inventor： Jiangyuan Qian ,  Hung-Pin Chang ,  Bedri A. Cetiner ,  Mark Bachman ,  Franco DeFlaviis ,  Guann-Pyng Li

IPC: H01P1/10 ,  B81B5/00

CPC classification number: H01H59/0009 ,  H01G5/16 ,  H01G5/40 ,  H01H2001/0084 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

Abstract translation: 本文所述的系统和方法提供具有两个或更多个谐振频率的射频微机电系统开关。 开关可以被配置为具有通过传输线耦合在两个电极之间的可偏转构件的电容分流开关。 第一绝缘体可以位于电极之间和可偏转构件之间，以形成电容元件。 可偏转构件可以在上升状态和下降状态之间偏转，下降状态将可偏转构件与传输线电容耦合。 可以调节可偏转构件与第一绝缘体重叠的程度，以调整电容元件的电容和所得到的谐振频率。

公开(公告)号：US5017990A

公开(公告)日：1991-05-21

申请号：US445251

申请日：1989-12-01

Applicant: Tze-Chiang Chen ,  Ching-Te Kent Chuang ,  Guann-Pyng Li ,  Tak Hung Ning

Inventor： Tze-Chiang Chen ,  Ching-Te Kent Chuang ,  Guann-Pyng Li ,  Tak Hung Ning

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732

CPC classification number: H01L29/66287 ,  H01L29/1004 ,  H01L29/732

Abstract: The invention relates to a bipolar transistor structure which includes a layer of semiconductor material having a single crystal raised base, a single crystal or polycrystalline emitter and adjacent polycrystalline regions which provide an electrical connection to the emitter. The invention also relates to the method of fabricating such a structure and includes the step of depositing a conformal layer of semiconductor material of one conductivity type over a region of opposite conductivity and over insulation such that single crystal and polycrystalline regions form over single crystal material and insulation, respectively. In a subsequent step, a layer of opposite conductivity type semiconductor material is deposited on the first layer forming single crystal or polycrystalline material over single crystal and polycrystalline material over polycrystalline. Then, in a final step, the structure is subjected to an out-diffusion step which simultaneously forms a single crystal emitter region of opposite conductivity type, a p-n junction in the one conductivity type single crystal region and regions of opposite conductivity type which act as an interconnection to the emitter region.

公开(公告)号：US09641174B2

公开(公告)日：2017-05-02

申请号：US13444753

申请日：2012-04-11

Applicant: Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Ruisheng Chang ,  Minfeng Wang ,  Sungjun Kim

Inventor： Mark Bachman ,  Guann-Pyng Li ,  Yang Zhang ,  Ruisheng Chang ,  Minfeng Wang ,  Sungjun Kim

IPC: H01H51/22 ,  H03K17/975

CPC classification number: H03K17/975

Abstract: Micro capacitive switches and methods of manufacturing micro capacitive switches at variable nominal capacitance value using micro-structures on the contact plates of the same dimension. In a preferred embodiment, a separately manufactured contact plate can be mounted to a movable magnet in order to be actuated to “on” and “off” state of the capacitive switch. Depending on the contact plate's surface condition, variable contact capacitance at “on” state can be precisely specified by geometrical properties of the micro-structures on the surface, such as the density, size and depth.

公开(公告)号：US07859803B2

公开(公告)日：2010-12-28

申请号：US11533328

申请日：2006-09-19

Applicant: Yintat Ma ,  Guann-Pyng Li

Inventor： Yintat Ma ,  Guann-Pyng Li

IPC: H02H9/00

CPC classification number: H03F1/52 ,  H01L27/0255 ,  H03F3/3435 ,  H03F2200/444

Abstract: Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributed amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.

Abstract translation: 提供改进的保护电路用作电压过载保护电路，RF输入引脚的ESD保护电路和用于分布式放大器的单元保护单元。 优选地，保护电路包括用于触发开关的正阈值电压触发器，其中触发器包括与电阻器串联的二极管串，并且开关包括与二极管串联的双极晶体管开关。 或者，触发器包括与单个二极管和单个电阻器串联的二极管串，并且用于触发与二极管串联的达林顿对晶体管开关。 在另一个实施例中，达林顿对晶体管开关由电容器触发。 在与分布式放大器一起使用时，ESD保护电路优选地被吸收在分布式放大器的人造传输线内部。

公开(公告)号：US07408752B2

公开(公告)日：2008-08-05

申请号：US11755631

申请日：2007-05-30

Applicant: Yin Tat Ma ,  Guann Pyng Li

Inventor： Yin Tat Ma ,  Guann Pyng Li

IPC: H02H9/00 ,  H02H3/20 ,  H02H9/04 ,  H02H3/22 ,  H02H7/00

CPC classification number: H01L27/0255 ,  H01L27/0259

Abstract: A low loading capacitance on-chip electrostatic discharge (ESD) protection circuit for compound semiconductor power amplifiers is disclosed, which does not degrade the circuit RF performance. Its principle of operation and simulation results regarding capacitance loading, leakage current, degradation to RF performance are disclosed. The design, loading effect over frequency, robustness over process and temperature variation and application to an RF power amplifier is presented in detail. The ESD circuit couples an input to ground during ESD surges through a diode string coupled to the input, and a transistor switch or Darlington pair having its gate coupled to and triggered by the diode string. The Darlington pair couples the input to ground when triggered through a low impedance path in parallel to the diode string. A reverse diode also couples ground to the input on reverse surges.

Abstract translation: 公开了用于复合半导体功率放大器的低负载电容片上静电放电（ESD）保护电路，其不会降低电路RF性能。 公开了其关于电容负载，漏电流，RF性能劣化的操作和仿真结果原理。 详细介绍了频率的设计，负载效应，过程鲁棒性和温度变化以及RF功率放大器的应用。 ESD电路在ESD浪涌期间通过耦合到输入的二极管串耦合输入到地，以及晶体管开关或达林顿对，其栅极耦合到二极管串并由二极管串触发。 当通过与二极管串并联的低阻抗路径触发时，达林顿对将输入耦合到地。 反向二极管也将接地连接到反向浪涌的输入。

公开(公告)号：US20080170727A1

公开(公告)日：2008-07-17

申请号：US11956756

申请日：2007-12-14

Applicant: Mark Bachman ,  Guann-Pyng Li

Inventor： Mark Bachman ,  Guann-Pyng Li

IPC: H04R7/00 ,  H04R31/00

CPC classification number: H04R19/005 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A micromachined microphone or speaker embedded within, or positioned on top of, a substrate suitable for carrying microelectronic chips and components. The acoustic element converts sound energy into electrical energy which is then amplified by electronic components positioned on the surface of the substrate. Alternatively, the acoustic element may be driven by electronics to produce sound. The substrate can be used in standard microelectronic packaging applications.

Abstract translation: 嵌入在适于承载微电子芯片和部件的基板内或位于其上的微机械麦克风或扬声器。 声学元件将声能转换成电能，然后由位于基板表面上的电子部件放大。 或者，声学元件可以由电子器件驱动以产生声音。 该基板可用于标准微电子封装应用。