公开(公告)号：US07812414B2

公开(公告)日：2010-10-12

申请号：US11656711

申请日：2007-01-23

Applicant: Yong-Tian Hou ,  Peng-Fu Hsu ,  Jin Ying ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Tze-Liang Lee

Inventor： Yong-Tian Hou ,  Peng-Fu Hsu ,  Jin Ying ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Tze-Liang Lee

IPC: H01L29/78

CPC classification number: H01L21/823842 ,  H01L21/28044 ,  H01L21/28088 ,  H01L21/823835 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833 ,  H01L29/7843

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括第一导电类型的第一MOS器件和与第一导电类型相反的第二导电类型的第二MOS器件。 第一MOS器件包括在半导体衬底上的第一栅极电介质; 在所述第一栅极电介质上的第一含金属的栅电极层; 以及位于第一含金属栅电极层上的硅化物层。 第二MOS器件包括半导体衬底上的第二栅极电介质; 在所述第二栅极电介质上方的第二含金属的栅电极层; 以及具有位于所述第二含金属栅电极层上的部分的接触蚀刻停止层，其中所述接触蚀刻停止层的所述部分和所述第二含金属栅电极层之间的区域基本上不含硅。

公开(公告)号：US07667289B2

公开(公告)日：2010-02-23

申请号：US11091508

申请日：2005-03-29

Applicant: Jian-Hong Lin ,  Kang-Cheng Lin

Inventor： Jian-Hong Lin ,  Kang-Cheng Lin

IPC: H01L21/326

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A laser fuse structure for a semiconductor device, the laser fuse structure having an array of laser fuses wherein one or more of the fuses in the array have a tortuous fuse line extending between first and second connectors that connect the fuse to an underlying circuit area.

Abstract translation: 一种用于半导体器件的激光熔丝结构，所述激光熔丝结构具有激光熔丝阵列，其中阵列中的一个或多个熔丝具有在将熔丝连接到下面的电路区域的第一和第二连接器之间延伸的曲折熔丝。

公开(公告)号：US20090108365A1

公开(公告)日：2009-04-30

申请号：US11926830

申请日：2007-10-29

Applicant: Joshua Tseng ,  Kang-Cheng Lin ,  Ji-Yi Yang ,  Kuo-Tai Huang ,  Ryan Chia-Jen Chen

Inventor： Joshua Tseng ,  Kang-Cheng Lin ,  Ji-Yi Yang ,  Kuo-Tai Huang ,  Ryan Chia-Jen Chen

IPC: H01L27/092 ,  H01L21/3205

CPC classification number: H01L21/823857 ,  H01L21/823842

Abstract: A metal gate/high-k dielectric semiconductor device provides an NMOS gate structure and a PMOS gate structure formed on a semiconductor substrate. The NMOS gate structure includes a high-k gate dielectric treated with a dopant impurity such as La and the high-k gate dielectric material of the PMOS gate structure is deficient of this dopant impurity and further includes a work function tuning layer over the high-k gate dielectric. A process for simultaneously forming the NMOS and PMOS gate structures includes forming the high-k gate dielectric material, and the work function tuning layer thereover, then selectively removing the work function tuning layer from the NMOS region and carrying out a plasma treatment to selectively dope the high-k gate dielectric material in the NMOS region with a dopant impurity while the high-k gate dielectric in the PMOS region is substantially free of the dopant impurity.

Abstract translation: 金属栅极/高k电介质半导体器件提供形成在半导体衬底上的NMOS栅极结构和PMOS栅极结构。 NMOS栅极结构包括用诸如La的掺杂剂杂质处理的高k栅极电介质，并且PMOS栅极结构的高k栅极电介质材料缺乏该掺杂杂质，并且还包括高功率调制层， k栅极电介质。 用于同时形成NMOS和PMOS栅极结构的工艺包括在其上形成高k栅极介电材料和功函数调谐层，然后从NMOS区选择性地去除功函数调谐层，并进行等离子体处理以选择性地掺杂 具有掺杂剂杂质的NMOS区域中的高k栅极电介质材料，而PMOS区域中的高k栅极电介质基本上不含掺杂剂杂质。

公开(公告)号：US06861754B2

公开(公告)日：2005-03-01

申请号：US10628040

申请日：2003-07-25

Applicant: Kang-Cheng Lin ,  Tien-I Bao

Inventor： Kang-Cheng Lin ,  Tien-I Bao

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/48

CPC classification number: H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor package seal ring including a plurality of insulating layers, a plurality of conductive runners each embedded in one of the insulating layers, and a plurality of conductive posts each contacting one of the conductive runners and extending through at least one of the insulating layers and at least partially through an opening in another one of the conductive runners.

Abstract translation: 一种半导体封装密封环，包括多个绝缘层，多个导电流道，每个绝缘层嵌入在一个绝缘层中，以及多个导电柱，每个导电柱均接触导电流道中的一个并延伸穿过至少一个绝缘层， 至少部分地通过另一个导电流道中的开口。

公开(公告)号：US20050017363A1

公开(公告)日：2005-01-27

申请号：US10628040

申请日：2003-07-25

Applicant: Kang-Cheng Lin ,  Tien-I Bao

Inventor： Kang-Cheng Lin ,  Tien-I Bao

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/48

CPC classification number: H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor package seal ring including a plurality of insulating layers, a plurality of conductive runners each embedded in one of the insulating layers, and a plurality of conductive posts each contacting one of the conductive runners and extending through at least one of the insulating layers and at least partially through an opening in another one of the conductive runners.

Abstract translation: 一种半导体封装密封环，包括多个绝缘层，多个导电流道，每个绝缘层嵌入在一个绝缘层中，以及多个导电柱，每个导电柱均接触导电流道中的一个并延伸穿过至少一个绝缘层， 至少部分地通过另一个导电流道中的开口。

公开(公告)号：US06316357B1

公开(公告)日：2001-11-13

申请号：US08947381

申请日：1997-10-08

Applicant: Kang-Cheng Lin ,  Hong-Woei Wu

Inventor： Kang-Cheng Lin ,  Hong-Woei Wu

IPC: H01L2128

CPC classification number: H01L29/665 ,  H01L21/268 ,  H01L29/4933

Abstract: The present invention discloses a method for forming metal silicide on an electronic structure by first depositing a metal layer on top of a silicon layer of polysilicon, single crystal silicon or amorphous silicon capable of forming a metal silicide, and then irradiating the metal layer with laser energy for a sufficient length of time such that a layer of metal silicide is formed at the metal interface with polysilicon, single crystal silicon and amorphous silicon. The unreacted metal layer on the metal silicide is then removed by a wet dipping method by selecting a suitable etchant for the metal. The present invention novel method can be applied to various metallic materials such as Ti, Co, W, Pt, Hf, Ta, Mo, Pd and Cr. The laser source utilized is a pulse Excimer laser of XeCl, ArF or XeF.

Abstract translation: 本发明公开了一种在电子结构上形成金属硅化物的方法，首先在多晶硅硅单晶硅或能形成金属硅化物的非晶硅之上沉积金属层，然后用激光照射金属层 能量足够长的时间，使得在与多晶硅，单晶硅和非晶硅的金属界面处形成金属硅化物层。 然后通过选择合适的金属蚀刻剂，通过湿式浸渍法除去金属硅化物上的未反应的金属层。 本发明新颖的方法可应用于Ti，Co，W，Pt，Hf，Ta，Mo，Pd和Cr等各种金属材料。 所使用的激光源是XeCl，ArF或XeF的脉冲准分子激光器。

公开(公告)号：US6018166A

公开(公告)日：2000-01-25

申请号：US124680

申请日：1998-07-30

Applicant: Kang-Cheng Lin ,  Hong-Jye Hong

Inventor： Kang-Cheng Lin ,  Hong-Jye Hong

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/84 ,  H01L29/167

CPC classification number: H01L29/66765 ,  H01L29/78618

Abstract: The present invention includes forming a conductive layer on a substrate. Portions of the conductive layer are removed using a first photoresist layer as a mask. A first oxide layer is formed over the conductive layer and the substrate, and an amorphous silicon layer is then formed on the first oxide layer. After annealing the amorphous silicon layer, thereby transforming amorphous silicon layer to a polysilicon layer, a second oxide layer is formed on the polysilicon layer. The second oxide layer is removed using a second photoresist layer as a mask. An amorphous silicon carbon layer is formed over the second oxide layer and the polysilicon layer, and a heavily-doped amorphous silicon carbon layer is formed on the amorphous silicon carbon layer. After annealing the heavily-doped amorphous silicon carbon layer and the amorphous silicon carbon layer, thereby transforming the heavily-doped amorphous silicon carbon layer to a heavily-doped polysilicon carbon layer, and transforming the amorphous silicon carbon layer to a polysilicon carbon layer, portions of the polysilicon carbon layer, the heavily-doped polysilicon carbon layer and the polysilicon layer are removed using a third photoresist layer as a mask.

Abstract translation: 本发明包括在基板上形成导电层。 使用第一光致抗蚀剂层作为掩模去除部分导电层。 在导电层和基板上形成第一氧化物层，然后在第一氧化物层上形成非晶硅层。 在非晶硅层退火之后，将非晶硅层转化为多晶硅层，在多晶硅层上形成第二氧化物层。 使用第二光致抗蚀剂层作为掩模去除第二氧化物层。 在第二氧化物层和多晶硅层上形成非晶硅碳层，在非晶硅碳层上形成重掺杂的非晶硅碳层。 在重掺杂非晶硅碳层和非晶硅碳层退火之后，将重掺杂非晶硅碳层转化为重掺杂多晶硅碳层，并将非晶硅碳层转化为多晶碳层， 的多晶硅碳层，使用第三光致抗蚀剂层作为掩模去除重掺杂多晶硅碳层和多晶硅层。

公开(公告)号：US20130104956A1

公开(公告)日：2013-05-02

申请号：US13493379

申请日：2012-06-11

Applicant: Ming-Tzu Chou ,  Chien-Wen Chen ,  Ching-Hao Tu ,  Chih-Chiang Huang ,  Kang-Cheng Lin

Inventor： Ming-Tzu Chou ,  Chien-Wen Chen ,  Ching-Hao Tu ,  Chih-Chiang Huang ,  Kang-Cheng Lin

IPC: H01L31/05 ,  H01L31/0224

CPC classification number: H01L31/022433 ,  H01L31/0504 ,  Y02E10/50

Abstract: A solar cell module includes multiple solar cells connected in series through wiring units. Each solar cell comprises an electrode unit disposed on a photoelectric conversion unit converting solar energy into electrical energy, and including multiple finger electrodes. At least one finger electrode has a first conducting section connected to a bus bar electrode, and a second conducting section disposed on one side of the first conducting section, extending away from the bus bar electrode and having a thickness greater than that of each of the first conducting section and the bus bar electrode.

Abstract translation: 太阳能电池模块包括通过布线单元串联连接的多个太阳能电池。 每个太阳能电池包括设置在光电转换单元上的电极单元，其将太阳能转换成电能，并且包括多个指状电极。 至少一个指状电极具有连接到母线电极的第一导电部分和设置在第一导电部分的一侧上的第二导电部分，其远离母线电极延伸，并且具有大于 第一导电段和母线电极。

公开(公告)号：US20110240113A1

公开(公告)日：2011-10-06

申请号：US13028466

申请日：2011-02-16

Applicant: TING FANG ,  KANG-CHENG LIN

Inventor： TING FANG ,  KANG-CHENG LIN

IPC: H01L31/0232

CPC classification number: H01L31/022458 ,  H01L31/0547 ,  H01L31/0682 ,  Y02E10/52 ,  Y02E10/547

Abstract: A solar cell structure includes a silicon crystal having at least one slant penetrating hole, the penetrating hole internally having at least one inclined surface; an emitter covering the silicon crystal and the inclined surface in the penetrating hole; and a first metal electrode being electrically connected to the emitter and located in the penetrating hole of the silicon crystal at a bottom thereof. By forming the inclined surface having an inclination angle in the slant penetrating hole, light incident upon the inclined surface of the penetrating hole can have a length-increased optical path in the solar cell to thereby enhance the photocurrent of the solar cell.

Abstract translation: 太阳能电池结构包括具有至少一个倾斜穿透孔的硅晶体，所述穿透孔内部具有至少一个倾斜表面; 覆盖硅晶体的发射体和穿透孔中的倾斜面; 以及第一金属电极，其电连接到发射极并位于其底部的硅晶体的穿透孔中。 通过在倾斜贯通孔中形成具有倾斜角度的倾斜面，入射到贯通孔的倾斜面的光可以在太阳能电池中具有长度增加的光路，从而增强太阳能电池的光电流。

公开(公告)号：US20100052076A1

公开(公告)日：2010-03-04

申请号：US12270311

申请日：2008-11-13

Applicant: Da-Yuan Lee ,  Chien-Hao Huang ,  Chi-Chun Chen ,  Kang-Cheng Lin

Inventor： Da-Yuan Lee ,  Chien-Hao Huang ,  Chi-Chun Chen ,  Kang-Cheng Lin

IPC: H01L29/78 ,  H01L21/28

CPC classification number: H01L29/513 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/518

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate, and a transistor formed in the substrate. The transistor has a gate structure that includes an interfacial layer formed on the substrate, a high-k dielectric layer formed on the interfacial layer, a capping layer formed on the high-k dielectric layer, the capping layer including a silicon oxide, silicon oxynitride, silicon nitride, or combinations thereof, and a polysilicon layer formed on the capping layer.

Abstract translation: 本公开提供了一种半导体器件，其包括半导体衬底和形成在衬底中的晶体管。 晶体管具有栅极结构，该栅极结构包括形成在衬底上的界面层，形成在界面层上的高k电介质层，形成在高k电介质层上的覆盖层，覆盖层包括氧化硅，氮氧化硅 ，氮化硅或其组合，以及形成在覆盖层上的多晶硅层。