Abstract:
A curable silicone composition comprising at least the following components: (A) an epoxy-containing organopolysiloxane; (B) a curing agent for an epoxy resin; (C) a thermally conductive metal powder; and (D) a thermally conductive nonmetal powder; exhibits low viscosity, excellent handleability and curability and, when cured, forms a cured body of flexibility, low specific gravity, and excellent thermal conductivity. An electronic component sealed or adhesively bonded with use of a cured body obtained by curing the aforementioned composition provides high reliability.
Abstract:
A curable silicone composition containing an organopolysiloxane that contains in one molecule at least one epoxy-containing organic group, has a polystyrene-referenced weight-average molecular weight at least 500, and is expressed by the following general unit formula: (RSiO3/2)x[R1aSiO(4-a)/2]y (where R represents a cycloalkyl group, and R1 represents hydrogen atom or a univalent organic group, except for an aromatic group and a cycloalkyl group, at least one R1 in one molecule being an epoxy-containing univalent organic group, and where the following condition is observed: 0 0; y>0; and x+y=1).
Abstract:
High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride. And then, the aqueous solution of cobalt chloride is evaporated to dryness and heated to 623 K to 873 K in a hydrogen atmosphere to generate cobalt.
Abstract translation:提供了非常少量杂质如铜的高纯度钴,其制造方法和高纯度钴靶。 将含钴杂质如铜溶解在盐酸溶液中,氯化钴水溶液的盐酸浓度调节至0.1kmol / m 3至3kmol / m 3, SUP> 3 SUP>。 然后,将钴加入到氯化钴水溶液中,并将惰性气体搅拌注入溶液中,以将氯化钴水溶液中所含的二价铜离子转化为一价铜离子。 然后,将氯化钴水溶液加入填充有阴离子交换树脂的柱中。 尽管单价铜离子被吸收在阴离子交换树脂上,但是钴不会吸收在阴离子交换树脂上。 因此,可以从氯化钴水溶液中分离出铜。 然后,将氯化钴水溶液蒸发至干,并在氢气氛中加热至623K至873K,以产生钴。
Abstract:
A curable silicone composition includes: (A) an organopolysiloxane represented by the siloxane unit formula (1) given below and having at least two univalent organic groups that contain epoxy groups and are free of aromatic rings: [R13SiO1/2]a [R22SiO2/2]b [R3SiO3/2]c (where R1, R2, and R3 are univalent organic groups, at least two of which are contain epoxy groups and are free of aromatic rings; more than 20 mole % of R3 are aryl groups; a+b+c & equals; 1; on average, “a” satisfies the following condition: 0≦a≦0.8; on average, “b” satisfies the following condition: 0≦b≦0.8; and, on average satisfies the following condition: 0.2≦c≦1.0); (B) a linear-chain organopolysiloxane having at least two univalent organic groups that contain phenolic hydroxyl groups; and (C) a curing accelerator.
Abstract translation:可固化的有机硅组合物包括:(A)由下式给出的硅氧烷单元式(1)表示的具有至少两个含有环氧基并且不含芳环的一价有机基团的有机聚硅氧烷:[R 1 3 sub> SiO 2 1/2 sub> 2 sub> 2 sub> 2 sub> > 2/2 b> b> i> 3 b> R 1,R 2,R 3和R 3是一价有机基团,其中至少两个含有环氧基并且不含芳环; 大于20摩尔%的R 3是芳基; a + b + c等于1;平均而言,“a”满足以下条件:0 <= a <= 0.8;平均 ,“b”满足以下条件:0 <= b <= 0.8;平均满足下列条件:0.2 <= c <= 1.0); (B)具有至少两个含有酚羟基的一价有机基团的直链有机聚硅氧烷; 和(C)固化促进剂。
Abstract:
An adhesive composition for bonding of semiconductor chips to their chip mounting components comprising a curable polymer composition that comprises a spherical filler having an average particle size from greater than 100 to 1,000 &mgr;m and an aspect ratio of 1 to 1.5. Semiconductor devices according to this invention are characterized in that a semiconductor chip therein is bonded to the mounting component for said chip by the aforementioned adhesive.
Abstract:
A semiconductor device comprising a semiconductor element; a substrate; and a hot-melt adhesive sheet bonding the semiconductor element to the substrate, wherein the hot-melt adhesive sheet comprises a spacer having the form of a sheet and a hot melt adhesive on both sides of the spacer. A semiconductor device comprising a semiconductor element; a substrate; and a hot-melt adhesive sheet bonding the semiconductor element to the substrate, wherein the hot-melt adhesive sheet comprises a mixture of a hot melt adhesive and a spacer, wherein the adhesive is selected from a silicone-modified epoxy resin adhesive, a silicone adhesive, and a silicone-modified polyimide adhesive, and the spacer has the form of particles.
Abstract:
A chlorinated vinyl chloride resin composition comprising 100 parts by weight of chlorinated vinyl chloride resin and a hydroxypolycarboxylic acid salt, e.g., sodium tartrate, and/or 0.2 to 1.5 parts by weight of zeolite. The composition exhibits improved thermal stability and is particularly suited to pipe extrusion.
Abstract:
A metal purification method and a metal refinement method in which metals of high purity can be easily refined and recovered without increasing the size of the purification and refining devices or complicating the operation. To this end, metals containing impurities are molten in a plasma arc containing active hydrogen to remove the impurities. If the metals contain ceramics inclusions, the metals are molten in a plasma arc containing active hydrogen and the ceramics inclusions are caused to float over the molten metal by exploiting the difference of density between the molten metal and the ceramics inclusions. The floating ceramics inclusions are decomposed and removed. For application to refining, the metal oxides are molten in a plasma arc containing active hydrogen so as to be reduced to metals.
Abstract:
A silicone adhesive sheet for bonding a semiconductor chip to a chip attachment component comprising a crosslinkable silicone composition containing a silatrane derivative, and a method for manufacturing a silicone adhesive sheet by subjecting a crosslinkable silicone composition containing a silatrane derivative to a crosslinking reaction between backing materials that do not stick to the crosslinked product of said composition, where at least one of the backing materials has a larger dielectric constant than that of the crosslinked product. The present silicone adhesive sheet allows a semiconductor chip and a chip attachment component to be bonded in a short time at a relatively low temperature.
Abstract:
A polyvinyl chloride resin having an average particle diameter of not less than 150 &mgr;m and porosity at 31-1,011 psi of not less than 0.15 cc/g is suspended in an aqueous medium and chlorinated by blowing gaseous chlorine into the aqueous suspension. In this way, floating resin formation during chlorination can be prevented and a chlorinated polyvinyl chloride resin excellent in free flow property and showing good resistance to initial discoloration and good thermal stability in heating and molding processes can be produced.