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    GATE DRIVER
    41.
    发明申请
    GATE DRIVER 有权
    门控驱动

    公开(公告)号：US20120306545A1

    公开(公告)日：2012-12-06

    申请号：US13482384

    申请日：2012-05-29

    Applicant: Osamu MACHIDA ,  Shinji Sato

    Inventor： Osamu MACHIDA ,  Shinji Sato

    IPC: H03K3/00

    CPC classification number: H02M3/1588 ,  H02M1/08 ,  Y02B70/1466

    Abstract: A gate driver turns on/off a switching element Q1 by applying a control signal from a controller to a gate of the switching element. The switching element has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor C1 and a first resistor R1 and is connected between the controller and the gate of the switching element and a short-circuit unit S4 that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.

    Abstract translation: 栅极驱动器通过将来自控制器的控制信号施加到开关元件的栅极来打开/关闭开关元件Q1。 开关元件具有栅极，漏极和源极，并且包含宽带隙半导体。 栅极驱动器包括并联电路，其包括第一电容器C1和第一电阻器R1，并且连接在控制器和开关元件的栅极之间，并且连接在开关元件的栅极和源极之间的短路单元S4 并且在从控制信号的OFF脉冲延迟之后使开关元件的栅极和源极短路。

    PIEZOELECTRIC ACTUATOR, METHOD OF PRODUCING PIEZOELECTRIC ACTUATOR, AND LIQUID DISCHARGE HEAD
    42.
    发明申请
    PIEZOELECTRIC ACTUATOR, METHOD OF PRODUCING PIEZOELECTRIC ACTUATOR, AND LIQUID DISCHARGE HEAD 有权
    压电致动器，制造压电致动器的方法和液体放电头

    公开(公告)号：US20120236084A1

    公开(公告)日：2012-09-20

    申请号：US13416055

    申请日：2012-03-09

    Applicant: Yasuhiro WATANABE ,  Osamu MACHIDA ,  Akira SHIMOFUKU ,  Ryoh TASHIRO

    Inventor： Yasuhiro WATANABE ,  Osamu MACHIDA ,  Akira SHIMOFUKU ,  Ryoh TASHIRO

    IPC: B41J2/045 ,  H01L41/22 ,  H01L41/047

    CPC classification number: B41J2/14233 ,  H01L41/0973 ,  H01L41/317 ,  H01L41/33

    Abstract: Disclosed is a method of producing a piezoelectric actuator including a first electrode film forming process; a monomolecular film forming process; a pattering process of removing a monomolecular film having a rectangular shape; an application process of applying a precursor solution to the first electrode film exposed in the rectangular shape; a piezoelectric film forming process of converting the applied precursor solution into a piezoelectric film; and a second electrode film forming process. Materials of the precursor solution, the first electrode film, and the monomolecular film are adjusted so that the first electrode film is lyophilic and the monomolecular film is lyophobic to the precursor solution. The piezoelectric film forming process includes a drying and thermally decomposing process of drying and thermally decomposing the precursor solution; and a crystallizing process of crystallizing a thermally decomposed piezoelectric material.

    Abstract translation: 公开了一种制造包括第一电极膜形成工艺的压电致动器的方法; 单分子成膜工艺; 去除具有矩形形状的单分子膜的图案化方法; 将前体溶液施加到以矩形形状暴露的第一电极膜的施加方法; 将所施加的前体溶液转化成压电膜的压电膜形成方法; 和第二电极膜形成工艺。 调节前体溶液，第一电极膜和单分子膜的材料，使得第一电极膜是亲液性的，并且单分子膜与前体溶液疏液。 压电薄膜形成方法包括干燥和热分解前体溶液的热分解过程; 以及结晶热分解压电材料的结晶过程。

    SEMICONDUCTOR DEVICE
    44.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110233615A1

    公开(公告)日：2011-09-29

    申请号：US13042519

    申请日：2011-03-08

    Applicant: Osamu MACHIDA

    Inventor： Osamu MACHIDA

    IPC: H01L29/778

    CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/7391 ,  H01L29/872

    Abstract: To provide a semiconductor device in which a rectifying element capable of reducing a leak current in reverse bias when a high voltage is applied and reducing a forward voltage drop Vf and a transistor element are integrally formed on a single substrate.A semiconductor device has a transistor element and a rectifying element on a single substrate. The transistor element has an active layer formed on the substrate and three electrodes (source electrode, drain electrode, and gate electrode) disposed on the active layer. The rectifying element has an anode electrode disposed on the active layer, a cathode electrode which is the drain electrode, and a first auxiliary electrode between the anode electrode and cathode electrode.

    Abstract translation: 提供一种半导体器件，其中，当施加高电压时能够减小反向偏压中的漏电流并且减小正向压降Vf和晶体管元件的整流元件整体形成在单个衬底上。 半导体器件在单个衬底上具有晶体管元件和整流元件。 晶体管元件具有形成在基板上的有源层和设置在有源层上的三个电极（源电极，漏电极和栅电极）。 整流元件具有设置在有源层上的阳极电极，作为漏电极的阴极电极和位于阳极电极和阴极电极之间的第一辅助电极。

    Semiconductor device
    46.
    发明申请
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号：US20070228401A1

    公开(公告)日：2007-10-04

    申请号：US11731260

    申请日：2007-03-30

    Applicant: Osamu Machida ,  Masataka Yanagihara ,  Shinichi Iwakami ,  Mio Suzuki

    Inventor： Osamu Machida ,  Masataka Yanagihara ,  Shinichi Iwakami ,  Mio Suzuki

    IPC: H01L33/00

    CPC classification number: H01L29/872 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/7787

    Abstract: A semiconductor device having: a substrate; nitride-based compound semiconductor layers formed on one main surface of the substrate and made of a nitride-based compound semiconductor; a first electrode formed on the nitride-based compound semiconductor layers and having a Schottky junction with the nitride-based compound semiconductor layers; and a second electrode formed on the nitride-based compound semiconductor layers and subjected to low resistance contact with the nitride-based compound semiconductor layers, wherein the first electrode and substrate are electrically connected through a connection conductor.

    Abstract translation: 一种半导体器件，具有：基板; 形成在基板的一个主表面上并由氮化物基化合物半导体制成的氮化物基化合物半导体层; 形成在所述氮化物系化合物半导体层上且与所述氮化物系化合物半导体层具有肖特基结的第一电极; 以及形成在所述氮化物系化合物半导体层上并与所述氮化物系化合物半导体层进行低电阻接触的第二电极，其中，所述第一电极和所述基板通过连接导体电连接。

    Ink jet head and droplet ejection device having same mounted thereon
    47.
    发明授权
    Ink jet head and droplet ejection device having same mounted thereon 失效
    具有安装在其上的喷墨头和墨滴喷射装置

    公开(公告)号：US07222946B2

    公开(公告)日：2007-05-29

    申请号：US10824588

    申请日：2004-04-15

    Applicant: Osamu Machida ,  Kunio Satou ,  Kazuo Shimizu ,  Yoshinari Suzuki

    Inventor： Osamu Machida ,  Kunio Satou ,  Kazuo Shimizu ,  Yoshinari Suzuki

    IPC: B41J2/045

    CPC classification number: B41J2/14274

    Abstract: An ink jet head includes: a chamber plate having a plurality of pressuring chambers formed therein for storing an ink; a vibrating plate bonded to the chamber plate; a housing having an ink flow path through which an ink is supplied into the pressuring chambers; an orifice through which an ink is ejected from the pressuring chambers; and a longitudinal vibration mode piezoelectric element for generating pressure under which an ink droplet is ejected through the orifice. A thickness of the vibration plate is from 5 μm to 10 μm.

    Abstract translation: 一种喷墨头包括：一个室板，其中形成有多个压力室，用于储存油墨; 结合到室板的振动板; 具有油墨流动通道的壳体，通过所述油墨流路将油墨供应到所述加压室中; 从所述加压室喷射墨水的孔口; 以及用于产生压力的纵向振动模式压电元件，在该压力下通过孔口喷射墨滴。 振动板的厚度为5um〜10um。

    Inkjet head having relay member interposed between piezoelectric element and diaphragm
    48.
    发明授权
    Inkjet head having relay member interposed between piezoelectric element and diaphragm 失效
    喷墨头具有介于压电元件和隔膜之间的中继元件

    公开(公告)号：US07163279B2

    公开(公告)日：2007-01-16

    申请号：US10874283

    申请日：2004-06-24

    Applicant: Kazuo Shimizu ,  Osamu Machida ,  Tomohiko Koda

    Inventor： Kazuo Shimizu ,  Osamu Machida ,  Tomohiko Koda

    IPC: B41J2/045

    CPC classification number: B41J2/1629 ,  B41J2/14274 ,  B41J2/1612 ,  B41J2/1628 ,  B41J2202/11

    Abstract: A piezoelectric element is attached to a diaphragm via a relay member. A length of the relay member is shorter than the length of the piezoelectric element and longer than an active section in the piezoelectric element with respect to a direction orthogonal to a direction in which a plurality of nozzles are aligned. Also, a surface of the relay member that attached to the diaphragm has a width that is shorter than the piezoelectric element with respect to the direction in which the nozzles are aligned.

    Abstract translation: 压电元件经由继电器构件附接到隔膜。 继电器构件的长度比压电元件的长度短，并且比压电元件中与多个喷嘴对准的方向正交的方向的有效部分长。 此外，附接到隔膜的中继构件的表面相对于喷嘴对准的方向具有比压电元件短的宽度。

    Short delay phased firing to reduce crosstalk in an inkjet printing device
    50.
    发明授权
    Short delay phased firing to reduce crosstalk in an inkjet printing device 有权
    短延时定相烧制以减少喷墨打印装置中的串扰

    公开(公告)号：US06719390B1

    公开(公告)日：2004-04-13

    申请号：US10403204

    申请日：2003-03-31

    Applicant: Stuart D. Howkins ,  Charles A. Willus ,  Osamu Machida

    Inventor： Stuart D. Howkins ,  Charles A. Willus ,  Osamu Machida

    IPC: B41J2938

    CPC classification number: B41J2/04525 ,  B41J2/04543 ,  B41J2/04573 ,  B41J2/04581 ,  B41J2/04588

    Abstract: An inkjet printing system includes an array of transducers to eject ink, the array including the transducers divided into interspersed sets. A controller controls a firing sequence of the array of transducers. One set of transducers is fired, and after a delay, another set of transducers is fired and then, after further delays, each set is fired in turn. The delays are selected based on known response characteristics of the array of transducers to minimize the average crosstalk for all of the sets.

    Abstract translation: 喷墨打印系统包括用于喷射墨水的换能器阵列，该阵列包括被分成散置的组的换能器。 控制器控制换能器阵列的点火顺序。 一组换能器被点燃，经过一段延迟之后，另一组换能器被点燃，然后在进一步的延迟之后，每组都被依次点燃。 基于传感器阵列的已知响应特性选择延迟，以最小化所有组的平均串扰。

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