公开(公告)号：US20170322319A1

公开(公告)日：2017-11-09

申请号：US15144861

申请日：2016-05-03

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Kris INIEWSKI ,  Glenn BINDLEY

IPC: G01T1/17 ,  G01T1/24

CPC classification number: G01T1/24 ,  G01T1/171

Abstract: Various embodiments described herein may include a detector array for a CT imaging system. The detector array includes a pixel array in which each pair of adjacent pixels in the pixel array may be separated by a collimator (e.g., located between each row and column of the pixel array) that absorbs photons and each pixel in the pixel array includes a sub-pixel array. The collimator absorbs photons that strike at a boundary between adjacent pixels. Each sub-pixel may have an anode that is connected to an ASIC channel When a sub-pixel in a pixel detects a photon, signals of a plurality of sub-pixels in the pixel are automatically summed, including the sub-pixel that detected the photon.

公开(公告)号：US20240418877A1

公开(公告)日：2024-12-19

申请号：US18612350

申请日：2024-03-21

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof INIEWSKI ,  Michael K. JACKSON ,  Yuxin SONG

IPC: G01T1/24 ,  G01N23/046 ,  G01N23/083

Abstract: Application specific integrated circuits (ASICs) for direct attach radiation detector structures include an array of unit cells including signal processing channel circuitry and data transmission through-substrate vias (TSVs) with reduced cross-talk between the signal processing channel circuitry and the data transmission TSVs.

公开(公告)号：US12094988B1

公开(公告)日：2024-09-17

申请号：US17807957

申请日：2022-06-21

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： James Balcom ,  Jason MacKenzie ,  Francis Joseph Kumar ,  Krzysztof Iniewski ,  Michael K. Jackson ,  Yuxin Song

IPC: H01L31/0272 ,  H01L31/0288 ,  H01L31/08 ,  H01L31/109

CPC classification number: H01L31/0272 ,  H01L31/0288 ,  H01L31/085 ,  H01L31/109

Abstract: An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

公开(公告)号：US20240302549A1

公开(公告)日：2024-09-12

申请号：US18594642

申请日：2024-03-04

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof INIEWSKI ,  Olivier TOUSIGNANT ,  Elmaddin GULIYEV

IPC: G01T1/24 ,  G01N23/046 ,  G01T7/00

CPC classification number: G01T1/247 ,  G01N23/046 ,  G01T7/005 ,  G01N2223/303 ,  G01N2223/501

Abstract: A method of calibrating a pixelated radiation detector containing a plurality of pixel detectors electrically connected to a plurality of respective read-out channels of detector read-out circuitry includes determining a sensor material deadtime, τsensor, for each of the plurality of pixel detectors, and adjusting the respective read-out channel deadtime, τASIC, based on the determined sensor material deadtime, τsensor, of the respective one of the plurality of pixel detectors, such that a total deadtime, τtotal of each pixel detector including a sum of the respective sensor material deadtime, τsensor, and the respective read-out channel deadtime, τASIC, varies by less than ±5% from each other.

公开(公告)号：US20240230932A9

公开(公告)日：2024-07-11

申请号：US18468891

申请日：2023-09-18

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Michael AYUKAWA ,  Krzysztof INIEWSKI

IPC: G01T1/24 ,  G01T1/175 ,  G01T1/29

CPC classification number: G01T1/241 ,  G01T1/175 ,  G01T1/243 ,  G01T1/244 ,  G01T1/247 ,  G01T1/2985

Abstract: A radiation detector unit includes at least one radiation sensor having pixel detectors that generate event detection signals in response to photon interaction events, an application specific integrated circuit (ASIC) including circuit components on a substrate, the at least one radiation sensor mounted over the application specific integrated circuit via a plurality of bonding material portions such that event detection signals generated in each of the pixel detectors of the at least one radiation sensor are received at a respective pixel region of the ASIC, and the circuit components of the ASIC convert the event detection signals received at each of the pixel regions of the ASIC to digital detection signals, and a carrier board underlying the ASIC, where the ASIC includes a plurality of through-substrate vias (TSVs) electrically coupling the ASIC to the carrier board, each of the TSVs underlying an active pixel detector of the at least one radiation sensor.

公开(公告)号：US20240134071A1

公开(公告)日：2024-04-25

申请号：US18468891

申请日：2023-09-17

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Michael AYUKAWA ,  Krzysztof INIEWSKI

IPC: G01T1/24 ,  G01T1/175 ,  G01T1/29

CPC classification number: G01T1/241 ,  G01T1/175 ,  G01T1/243 ,  G01T1/244 ,  G01T1/247 ,  G01T1/2985

Abstract: A radiation detector unit includes at least one radiation sensor having pixel detectors that generate event detection signals in response to photon interaction events, an application specific integrated circuit (ASIC) including circuit components on a substrate, the at least one radiation sensor mounted over the application specific integrated circuit via a plurality of bonding material portions such that event detection signals generated in each of the pixel detectors of the at least one radiation sensor are received at a respective pixel region of the ASIC, and the circuit components of the ASIC convert the event detection signals received at each of the pixel regions of the ASIC to digital detection signals, and a carrier board underlying the ASIC, where the ASIC includes a plurality of through-substrate vias (TSVs) electrically coupling the ASIC to the carrier board, each of the TSVs underlying an active pixel detector of the at least one radiation sensor.

公开(公告)号：US20230400422A1

公开(公告)日：2023-12-14

申请号：US18331490

申请日：2023-06-08

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof INIEWSKI ,  Olivier TOUSIGNANT ,  Elmaddin GULIYEV

IPC: G01N23/046 ,  G01N23/223 ,  G01N23/083

CPC classification number: G01N23/046 ,  G01N23/223 ,  G01N23/083 ,  G01N2223/306 ,  G01N2223/304

Abstract: A method of X-ray imaging includes determining energies of photons emitted by an X-ray source and attenuated by an object that are detected by an energy-discriminating radiation detector, generating photon count data by counting a number of detected photons in a plurality of energy bins of the energy-discriminating radiation detector that includes a first energy bin and an adjacent second energy bin, and generating an X-ray image of the object using the photon count data. Detected photons determined to have an energy within a gap region between a maximum energy threshold of the first energy bin and a minimum energy threshold of the second energy bin are not included in the photon count data used to generate the X-ray image of the object.

公开(公告)号：US11701065B2

公开(公告)日：2023-07-18

申请号：US16875133

申请日：2020-05-15

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Saeid Taherion ,  Glenn Bindley

IPC: A61B6/03 ,  G01T1/161 ,  G01T1/24 ,  G01N23/20066 ,  G01N23/046 ,  A61B6/00 ,  G01T1/164

CPC classification number: A61B6/037 ,  A61B6/4241 ,  A61B6/4258 ,  A61B6/5205 ,  G01N23/046 ,  G01N23/20066 ,  G01T1/1642 ,  G01T1/249 ,  G01N2223/051 ,  G01N2223/063 ,  G01N2223/1013 ,  G01N2223/304 ,  G01N2223/413

Abstract: Various aspects include methods compensating for Compton scattering effects in pixel radiation detectors. Various aspects may include determining whether gamma ray detection events occurred in two or more detector pixels within an event frame, determining whether the gamma ray detection events occurred in detector pixels within a threshold distance of each other in response to determining that gamma ray detection events occurred in two or more detector pixels within the event frame, and recording the two or more gamma ray detection events as a single gamma ray detection event having an energy equal to the sum of measured energies of the two or more gamma ray detection events located in a detector pixel having a highest measured energy in response to determining that the gamma ray detection events occurred in detector pixels within the threshold distance of each other.

公开(公告)号：US20210333420A1

公开(公告)日：2021-10-28

申请号：US17225416

申请日：2021-04-08

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof INIEWSKI ,  Michael K. JACKSON ,  Michael AYUKAWA

IPC: G01T1/29 ,  H01L27/146

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

公开(公告)号：US20210063589A1

公开(公告)日：2021-03-04

申请号：US16998676

申请日：2020-08-20

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof INIEWSKI ,  Saeid TAHERION ,  Conny HANSSON ,  Robert CRESTANI ,  Glenn BINDLEY

IPC: G01T7/00 ,  G01T1/24

Abstract: Various aspects include methods of compensating for issues caused by charge sharing between pixels in pixel radiation detectors. Various aspects may include measuring radiation energy spectra with circuitry capable of registering detection events occurring simultaneous or coincident in two or more pixels, adjusting energy measurements of simultaneous-multi-pixel detection events by a charge sharing correction factor, and determining a corrected energy spectrum by adding the adjusted energy measurements of simultaneous-multi-pixel detection events to energy spectra of detection events occurring in single pixels. Adjusting energy measurements of simultaneous-multi-pixel detection events may include multiplying measured energies of simultaneous-multi-pixel detection events by a factor of one plus the charge sharing correction factor.