公开(公告)号：US11156568B2

公开(公告)日：2021-10-26

申请号：US16844484

申请日：2020-04-09

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Michael Ayukawa ,  Conny Hansson

IPC: G01N23/20008 ,  G01N23/207

Abstract: Various aspects include methods and devices for reducing the scanning time for an X-ray diffraction scanner system by increasing the count rate or efficiency of the energy discriminating X-ray detector. In a first embodiment, the count rate of the energy discriminating X-ray detector is increased by increasing the number of detectors counting X-ray scatter photon in particular energy bins by configuring individual pixel detectors within a 2-D X-ray detector array to count photons within specific energy bins. In a second embodiment, the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector. In a third embodiment, the individual pixel detectors within a 2-D X-ray detector array are configured to count photons within specific energy bins and the gain of amplifier components in the detector processing circuitry is increased in order to increase the energy resolution of the detector.

公开(公告)号：US11835666B1

公开(公告)日：2023-12-05

申请号：US17390426

申请日：2021-07-30

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： James Balcom ,  Krzysztof Iniewski ,  Elmaddin Guliyev

IPC: G01T1/24 ,  G01N23/046

CPC classification number: G01T1/241 ,  G01T1/247 ,  G01N23/046

Abstract: An X-ray radiation detector includes a semiconductor material plate, at least one cathode located on a first side of the semiconductor material plate, and at least one anode located on a second side of the semiconductor material plate. The semiconductor material plate thickness is at least 1.9 mm. The X-ray radiation detector is configured to operate at an absolute value of applied bias voltage of 1050 VDC to 1500 VDC, such that an electric field of at least 550 VDC/mm is generated in the semiconductor material plate.

公开(公告)号：US11344266B2

公开(公告)日：2022-05-31

申请号：US17019750

申请日：2020-09-14

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Elmaddin Guliyev ,  Conny Hansson

IPC: A61B6/00 ,  G01N23/046

Abstract: Various aspects include methods for use in X-ray detectors for adjusting count measurements from pixel detectors within a pixelated detector module to correct for the effects of pileup events that occur when more than one photon is absorbed in a pixel detector during a deadtime of the detector system. In various embodiments, count measurements may be obtained at two different X-ray tube currents, from which the detector system deadtime may be calculated based on the two count measurements and a ratio of the two X-ray tube currents. Using the calculated deadtime, a pileup correction factor may be determined appropriate for the behavior of the detector system in response to pileup events. The pileup correction factor may be applied to pixel detector count values after the counts have been corrected for pixel-to-pixel differences using a flat field correction.

公开(公告)号：US11246547B2

公开(公告)日：2022-02-15

申请号：US16931800

申请日：2020-07-17

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Elmaddin Guliyev ,  Conny Hansson

IPC: A61B6/00 ,  A61B6/03

Abstract: Various aspects include methods for compensating for the effects of charge sharing among pixelate detectors in X-ray detectors by applying a correspondence factor to counts of X-ray photons in energy bins to estimate incident X-ray photon energy bins. The correspondence factor may be determined by determining an incident X-ray photon energy spectrum, adjusting the incident X-ray photon energy spectrum to account for an energy resolution of the pixelated detector, generating a charge sharing model for the adjusted incident X-ray photon energy spectrum based on a percentage charge sharing parameter of the pixelated detector, applying the charge sharing model to energy bins of the pixelated detector to estimate counts in each of the energy bins, and determining the correspondence factor by comparing the estimated counts in each of the energy bins to counts in the energy bins that would be expected for the adjusting the incident X-ray photon energy spectrum.

公开(公告)号：US12094988B1

公开(公告)日：2024-09-17

申请号：US17807957

申请日：2022-06-21

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： James Balcom ,  Jason MacKenzie ,  Francis Joseph Kumar ,  Krzysztof Iniewski ,  Michael K. Jackson ,  Yuxin Song

IPC: H01L31/0272 ,  H01L31/0288 ,  H01L31/08 ,  H01L31/109

CPC classification number: H01L31/0272 ,  H01L31/0288 ,  H01L31/085 ,  H01L31/109

Abstract: An ionizing radiation detector includes a p-type semiconductor single crystal substrate having first and second major planar opposing surfaces, where the p-type semiconductor single crystal substrate is doped with n-type dopant atoms, and where a concentration of deep level acceptor defects is greater than a concentration of the n-type dopant atoms in the p-type semiconductor single crystal substrate; a cathode electrode on the first major planar opposing surface of the p-type semiconductor single crystal substrate, and a plurality of anode electrodes on the second major planar opposing surface of the p-type semiconductor single crystal substrate.

公开(公告)号：US11701065B2

公开(公告)日：2023-07-18

申请号：US16875133

申请日：2020-05-15

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Saeid Taherion ,  Glenn Bindley

IPC: A61B6/03 ,  G01T1/161 ,  G01T1/24 ,  G01N23/20066 ,  G01N23/046 ,  A61B6/00 ,  G01T1/164

CPC classification number: A61B6/037 ,  A61B6/4241 ,  A61B6/4258 ,  A61B6/5205 ,  G01N23/046 ,  G01N23/20066 ,  G01T1/1642 ,  G01T1/249 ,  G01N2223/051 ,  G01N2223/063 ,  G01N2223/1013 ,  G01N2223/304 ,  G01N2223/413

Abstract: Various aspects include methods compensating for Compton scattering effects in pixel radiation detectors. Various aspects may include determining whether gamma ray detection events occurred in two or more detector pixels within an event frame, determining whether the gamma ray detection events occurred in detector pixels within a threshold distance of each other in response to determining that gamma ray detection events occurred in two or more detector pixels within the event frame, and recording the two or more gamma ray detection events as a single gamma ray detection event having an energy equal to the sum of measured energies of the two or more gamma ray detection events located in a detector pixel having a highest measured energy in response to determining that the gamma ray detection events occurred in detector pixels within the threshold distance of each other.

公开(公告)号：US10928527B2

公开(公告)日：2021-02-23

申请号：US16185963

申请日：2018-11-09

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Conny Hansson ,  Robert Crestani ,  Glenn Bindley

IPC: G01T7/00 ,  G01T1/208

Abstract: Various aspects include methods of compensating for issues caused by charge sharing between pixels in pixel radiation detectors. Various aspects may include measuring radiation energy spectra with circuitry capable of registering detection events occurring simultaneous or coincident in two or more pixels, adjusting energy measurements of simultaneous-multi-pixel detection events by a charge sharing correction factor, and determining a corrected energy spectrum by adding the adjusted energy measurements of simultaneous-multi-pixel detection events to energy spectra of detection events occurring in single pixels. Adjusting energy measurements of simultaneous-multi-pixel detection events may include multiplying measured energies of simultaneous-multi-pixel detection events by a factor of one plus the charge sharing correction factor.

公开(公告)号：US11733408B2

公开(公告)日：2023-08-22

申请号：US17225416

申请日：2021-04-08

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Michael K. Jackson ,  Michael Ayukawa

IPC: G01T1/29 ,  H01L27/146

CPC classification number: G01T1/2928 ,  H01L27/1463 ,  H01L27/14658 ,  H01L27/14696

Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.

公开(公告)号：US11372120B2

公开(公告)日：2022-06-28

申请号：US16998676

申请日：2020-08-20

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Krzysztof Iniewski ,  Saeid Taherion ,  Conny Hansson ,  Robert Crestani ,  Glenn Bindley

IPC: G01T7/00 ,  G01T1/24

Abstract: Various aspects include methods of compensating for issues caused by charge sharing between pixels in pixel radiation detectors. Various aspects may include measuring radiation energy spectra with circuitry capable of registering detection events occurring simultaneous or coincident in two or more pixels, adjusting energy measurements of simultaneous-multi-pixel detection events by a charge sharing correction factor, and determining a corrected energy spectrum by adding the adjusted energy measurements of simultaneous-multi-pixel detection events to energy spectra of detection events occurring in single pixels. Adjusting energy measurements of simultaneous-multi-pixel detection events may include multiplying measured energies of simultaneous-multi-pixel detection events by a factor of one plus the charge sharing correction factor.

公开(公告)号：US11169286B2

公开(公告)日：2021-11-09

申请号：US16155786

申请日：2018-10-09

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Elmaddin Guliyev ,  Georgios Prekas ,  Michael Rozler ,  Krzysztof Iniewski ,  Jean Marcoux ,  Conny Hansson

IPC: G01T7/04 ,  G01T7/00 ,  G01T1/24

Abstract: A set of N standard bin count distributions may be generated by irradiating a test radiation detector system with an X-ray beam attenuated by a respective one of N different K-edge filters for each of the at least one X-ray source energy setting. Energy bins of detectors of a target radiation detector system may be calibrated by generating measured bin count distributions for each calibration setting in which a respective one of the N different K-edge filters attenuates a source X-ray beam. Calibration parameters of the detectors of the target radiation detector system may be adjusted to match each of the measured bin count distributions to a corresponding standard bin count distribution. In addition, energy resolution of the radiation detectors can be measured and calibrated by fitting a portion of the measured X-ray spectrum near a K-edge to a fitting function.