公开(公告)号：US09142590B2

公开(公告)日：2015-09-22

申请号：US14479943

申请日：2014-09-08

Applicant: Silicon Optronics, Inc.

Inventor： Jun-Bo Chen

IPC: H01L29/808 ,  H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14806 ,  H01L21/28008 ,  H01L27/14614 ,  H01L27/14689 ,  H01L29/4916 ,  H01L29/786 ,  H01L29/808 ,  H01L29/8086

Abstract: A method for manufacturing a transfer gate transistor of an image sensor device is disclosed. The transistor includes a substrate, a gate oxide layer on the substrate and a gate electrode portion on the gate oxide layer. The gate electrode portion has a trench or an insulating layer used for accurately defining a first region and a second region in the gate electrode portion, wherein the first region has a first conductivity type, and the second region has a second conductivity type or is an undoped region.

Abstract translation: 公开了一种用于制造图像传感器装置的转移栅晶体管的方法。 晶体管包括衬底，衬底上的栅极氧化物层和栅极氧化物层上的栅电极部分。 栅电极部分具有沟槽或绝缘层，用于精确地限定栅电极部分中的第一区域和第二区域，其中第一区域具有第一导电类型，第二区域具有第二导电类型，或者是 未掺杂区域

公开(公告)号：US20150200218A1

公开(公告)日：2015-07-16

申请号：US14253287

申请日：2014-04-15

Applicant: SILICON OPTRONICS, INC.

Inventor： Yu-Yuan YAO

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14616 ,  H01L27/1463 ,  H04N5/3597

Abstract: The present invention provides an image sensor device including a substrate, a channel formed in the substrate, a photoelectric transfer region formed in the substrate adjacent to one side of the channel, a voltage transfer region formed in the substrate adjacent to the other side of the channel, wherein the doping concentration of the channel is decreased from the side adjacent to the photoelectric transfer region to the other side adjacent to the voltage transfer region of the channel, a gate dielectric layer formed on the substrate, and a gate formed on the gate dielectric layer. The present invention also provides a method for fabricating the image sensor device.

Abstract translation: 本发明提供了一种图像传感器装置，包括基板，形成在基板中的通道，形成在与基板的一侧相邻的基板中的光电转移区域，形成在与基板的另一侧相邻的基板中的电压转移区域 通道，其中所述通道的掺杂浓度从邻近所述光电转移区域的一侧减小到与所述通道的电压转移区域相邻的另一侧，形成在所述衬底上的栅极电介质层和形成在所述栅极上的栅极 电介质层。 本发明还提供了一种用于制造图像传感器装置的方法。

公开(公告)号：US11532655B2

公开(公告)日：2022-12-20

申请号：US16874062

申请日：2020-05-14

Applicant: Silicon Optronics, Inc.

Inventor： Yen-Chen Chang ,  Bo-Ray Lee

IPC: H01L27/146

Abstract: An image-sensing device is provided. The image-sensing device includes a substrate, a light-sensing element, a first dielectric layer, a light-guiding structure, and a patterned conductive layer. The light-sensing element is disposed in the substrate. The first dielectric layer is disposed on the first side of the substrate. The light-guiding structure is disposed in the first dielectric layer. The patterned conductive layer is disposed between the light-sensing element and the light-guiding structure. In addition, the patterned conductive layer includes a subwavelength structure. An image-sensing system including the above image-sensing device is also provided.

公开(公告)号：US10777593B2

公开(公告)日：2020-09-15

申请号：US16371515

申请日：2019-04-01

Applicant: Silicon Optronics, Inc.

Inventor： Bo-Ray Lee

IPC: H01L27/146

Abstract: A global shutter CMOS image sensor includes a photodiode, a floating diffusion region, and a storage diode disposed in the upper portion of the substrate. The storage diode is disposed between the photodiode and the floating diffusion region. A first transfer gate is disposed on the substrate between the photodiode and the storage node. A second transfer gate is disposed on the substrate between the storage diode and the floating diffusion region. A first dielectric layer is disposed on the substrate and covers the first transfer gate and the second transfer gate. A light-shielding layer is disposed on the first dielectric layer. A light pipe is disposed through the light-shielding layer and a portion of the first dielectric layer, and is correspondingly disposed above the photodiode. The light pipe has a higher refractive index than the first dielectric layer.

公开(公告)号：US10455179B2

公开(公告)日：2019-10-22

申请号：US15683082

申请日：2017-08-22

Applicant: SILICON OPTRONICS, INC.

Inventor： Xinping He

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/146

Abstract: An active pixel sensor is provided. The active pixel sensor includes a substrate, a plurality of sensing circuits, and a plurality of output circuits. The substrate is divided into a plurality of pixel rows. A plurality of pixel areas are disposed on the plurality of pixel rows. The plurality of sensing circuits are disposed in the pixel areas on the pixel rows excluding a specific pixel row among the plurality of pixel rows. The plurality of sensing circuits are further disposed on a plurality of pixel columns to form an array. Each of the plurality of sensing circuits includes a sensing element, a transfer transistor, and a floating diffusion node. The plurality of output circuits are disposed in the pixel areas on the specific pixel row. The sensing circuits on the same pixel column are coupled to the same output circuit.

公开(公告)号：US10431626B2

公开(公告)日：2019-10-01

申请号：US15876704

申请日：2018-01-22

Applicant: Silicon Optronics, Inc.

Inventor： Jun-Bo Chen

IPC: H01L27/14 ,  H01L27/30 ,  H01L27/148 ,  H01L27/146 ,  A61B5/00

Abstract: An image sensor device is provided. The image sensor device includes a substrate, a plurality of photoelectric conversion units for collecting image signals disposed in the substrate, a first dielectric layer disposed upon the substrate, a plurality of metal layers disposed in the first dielectric layer, a trench disposed in the first dielectric layer and located between the adjacent metal layers, a filling material filled in the trench, a second dielectric layer disposed upon the first dielectric layer, and a light source or a detected object disposed over the second dielectric layer. The metal layer adjacent to the substrate is defined as a first metal layer. The metal layer adjacent to the top of the first dielectric layer is defined as a top metal layer. The trench extends from the top of the first dielectric layer towards the substrate to the first metal layer.

公开(公告)号：US09654714B2

公开(公告)日：2017-05-16

申请号：US14109834

申请日：2013-12-17

Applicant: Silicon Optronics, Inc.

Inventor： Xinping He

IPC: H04N5/374 ,  H04N5/341 ,  H04N5/369 ,  H04N5/378 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N5/37457 ,  H01L27/14609 ,  H04N5/341 ,  H04N5/369 ,  H04N5/3742 ,  H04N5/378

Abstract: An active pixel sensor comprising: a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, and the plurality of pixels have at least one floating diffusion region; and a plurality of processing circuits associated with the plurality of pixels; wherein each processing circuit comprises a charge amplifier.

公开(公告)号：US20160351612A1

公开(公告)日：2016-12-01

申请号：US15167311

申请日：2016-05-27

Applicant: Silicon Optronics, Inc.

Inventor： Pai-Chun ZUNG ,  XIAODONG LUO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14643

Abstract: An image sensor device is provided. The image sensor device includes a substrate including a central area and a peripheral area, a sensing area located at the central area of the substrate, a plurality of I/O pads located at the peripheral area of the substrate, and a plurality of metal wires disposed above the substrate which extend from the central area to the peripheral area of the substrate and are electrically connected to the I/O pads, wherein none of the metal wires overlies the sensing area.

Abstract translation: 提供图像传感器装置。 图像传感器装置包括：基板，包括中心区域和周边区域;位于基板中心区域的感测区域;位于基板周边区域的多个I / O焊盘;以及多个金属线 设置在从基板的中心区域延伸到基板的周边区域的基板上方，并且电连接到I / O焊盘，其中，金属线都不覆盖在感测区域上。

公开(公告)号：US20160127667A1

公开(公告)日：2016-05-05

申请号：US14703224

申请日：2015-05-04

Applicant: Silicon Optronics, Inc.

Inventor： Chun-Hung LIN

IPC: H04N5/367 ,  H04N5/363

CPC classification number: H04N5/3675

Abstract: An image capture device with a reduced number of line buffers. Based on an nth line of image data provided from an image sensor array and buffered data in the line buffers, a logic circuit determines defective candidates in an nth line of image data. When the (n+p)th line of image data is provided from the image sensor array, the logic circuit reexamines the defective candidates in the nth line of image data, for defective-pixel compensation, based on the (n+p)th line of image data and the buffered data in the plurality of line buffers. The buffered data in the line buffers contains the (n−p)th to (n−1)th lines of image data while the nth line of image data is provided from the image sensor array, and contains the nth to (n+p−1)th lines of image data while the (n+p)th line of image data is provided from the image sensor array.

Abstract translation: 具有减少行数缓冲器数量的图像捕获设备。 基于从图像传感器阵列提供的第n行图像数据和行缓冲器中的缓冲数据，逻辑电路确定第n行图像数据中的有缺陷的候选。 当从图像传感器阵列提供图像数据的第（n + p）行时，逻辑电路基于第（n + p）th重新检查图像数据的第n行中的缺陷候选，用于缺陷像素补偿 图像数据行和多个行缓冲器中的缓冲数据。 线缓冲器中的缓冲数据包含第（n-p）至第（n-1）行图像数据，而第n行图像数据从图像传感器阵列提供，并且包含第n至（n + p -1）的图像数据，而从图像传感器阵列提供图像数据的第（n + p）行。

公开(公告)号：US20150122971A1

公开(公告)日：2015-05-07

申请号：US14070365

申请日：2013-11-01

Applicant: Silicon Optronics, Inc.

Inventor： Xinping He

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H04N5/3745 ,  H01L27/14609

Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels. Each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, and a reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of the reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die.

Abstract translation: 有源像素传感器包括传感器管芯和电路管芯。 传感器芯片包括多个像素。 每个像素包括光敏元件和传输栅极，浮动扩散区域和复位栅极。 电路管芯包括与传感器管芯的复位栅极相关联的多个处理和放大电路。 传感器管芯与电路管芯互连，利用多个晶片间互连，每个晶片间互连耦合到传感器管芯上的复位栅极的源节点和电路管芯上的处理和放大电路的节点。