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1.
公开(公告)号:US20130327923A1
公开(公告)日:2013-12-12
申请号:US13898905
申请日:2013-05-21
Applicant: Silicon Optronics, Inc.
Inventor: Xinping He
IPC: H04N5/353
CPC classification number: H04N5/353 , H04N5/3535 , H04N5/355 , H04N5/37452
Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.
Abstract translation: 公开了一种高动态范围CMOS图像传感器。 图像传感器的像素包含像素内存。 此外,像素可以具有变化的积分周期。 积分周期部分地由先前积分周期中存储在像素内存中的信号确定。
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公开(公告)号:US20150123173A1
公开(公告)日:2015-05-07
申请号:US14075430
申请日:2013-11-08
Applicant: SILICON OPTRONICS, INC.
Inventor: Xinping He
IPC: H01L27/148 , H01L27/146
CPC classification number: H01L27/14634 , H01L27/14641 , H04N5/369 , H04N5/3745
Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, wherein the plurality of pixels include at least one reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of a reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die. The plurality of processing and amplification circuits each comprises a source follower transistor, wherein the source follower transistor uses a PMOS.
Abstract translation: 有源像素传感器包括传感器管芯和电路管芯。 传感器管芯包括多个像素,其中每个像素包括光敏元件和传输栅极,浮动扩散区域,其中多个像素包括至少一个复位栅极。 电路管芯包括与传感器管芯的复位栅极相关联的多个处理和放大电路。 传感器管芯与电路管芯互连,利用多个管芯间互连,每个管芯互连连接到传感器管芯上的复位栅极的源节点和电路管芯上的处理和放大电路的节点。 多个处理和放大电路各自包括源极跟随器晶体管,其中源极跟随器晶体管使用PMOS。
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公开(公告)号:US20150124135A1
公开(公告)日:2015-05-07
申请号:US14109834
申请日:2013-12-17
Applicant: Silicon Optronics, Inc.
Inventor: Xinping He
IPC: H04N5/3745 , H04N5/374
CPC classification number: H04N5/37457 , H01L27/14609 , H04N5/341 , H04N5/369 , H04N5/3742 , H04N5/378
Abstract: An active pixel sensor comprising: a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, and the plurality of pixels have at least one floating diffusion region; and a plurality of processing circuits associated with the plurality of pixels; wherein each processing circuit comprises a charge amplifier.
Abstract translation: 一种有源像素传感器,包括:多个像素,其中每个像素包括光敏元件和传输栅极,并且所述多个像素具有至少一个浮动扩散区域; 以及与所述多个像素相关联的多个处理电路; 其中每个处理电路包括电荷放大器。
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公开(公告)号:US10678378B2
公开(公告)日:2020-06-09
申请号:US15883918
申请日:2018-01-30
Applicant: Silicon Optronics, Inc.
Inventor: Xinping He
Abstract: The invention provides an optical fingerprint sensor including: an image sensing layer having an array composed of a plurality of sensing blocks; a collimating layer disposed on the image sensing layer and having a plurality of through holes penetrating from the top surface to the bottom surface of the collimating layer; a light guiding layer disposed in the collimating layer, and a glass cover layer disposed on the light guiding layer, the top surface of the glass cover layer receiving a finger touch, wherein the image resolution of the optical fingerprint sensor is defined by the number of sensing blocks, and there are a plurality of through holes directly above each of the sensing blocks.
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5.
公开(公告)号:US10455179B2
公开(公告)日:2019-10-22
申请号:US15683082
申请日:2017-08-22
Applicant: SILICON OPTRONICS, INC.
Inventor: Xinping He
IPC: H04N3/14 , H04N5/335 , H04N5/3745 , H04N5/378 , H01L27/146
Abstract: An active pixel sensor is provided. The active pixel sensor includes a substrate, a plurality of sensing circuits, and a plurality of output circuits. The substrate is divided into a plurality of pixel rows. A plurality of pixel areas are disposed on the plurality of pixel rows. The plurality of sensing circuits are disposed in the pixel areas on the pixel rows excluding a specific pixel row among the plurality of pixel rows. The plurality of sensing circuits are further disposed on a plurality of pixel columns to form an array. Each of the plurality of sensing circuits includes a sensing element, a transfer transistor, and a floating diffusion node. The plurality of output circuits are disposed in the pixel areas on the specific pixel row. The sensing circuits on the same pixel column are coupled to the same output circuit.
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公开(公告)号:US09654714B2
公开(公告)日:2017-05-16
申请号:US14109834
申请日:2013-12-17
Applicant: Silicon Optronics, Inc.
Inventor: Xinping He
IPC: H04N5/374 , H04N5/341 , H04N5/369 , H04N5/378 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/37457 , H01L27/14609 , H04N5/341 , H04N5/369 , H04N5/3742 , H04N5/378
Abstract: An active pixel sensor comprising: a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, and the plurality of pixels have at least one floating diffusion region; and a plurality of processing circuits associated with the plurality of pixels; wherein each processing circuit comprises a charge amplifier.
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公开(公告)号:US20150122971A1
公开(公告)日:2015-05-07
申请号:US14070365
申请日:2013-11-01
Applicant: Silicon Optronics, Inc.
Inventor: Xinping He
IPC: H01L27/148 , H01L27/146
CPC classification number: H04N5/3745 , H01L27/14609
Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels. Each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, and a reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of the reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die.
Abstract translation: 有源像素传感器包括传感器管芯和电路管芯。 传感器芯片包括多个像素。 每个像素包括光敏元件和传输栅极,浮动扩散区域和复位栅极。 电路管芯包括与传感器管芯的复位栅极相关联的多个处理和放大电路。 传感器管芯与电路管芯互连,利用多个晶片间互连,每个晶片间互连耦合到传感器管芯上的复位栅极的源节点和电路管芯上的处理和放大电路的节点。
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8.
公开(公告)号:US08981277B2
公开(公告)日:2015-03-17
申请号:US13898905
申请日:2013-05-21
Applicant: Silicon Optronics, Inc.
Inventor: Xinping He
IPC: H04N5/353 , H04N5/355 , H04N5/3745
CPC classification number: H04N5/353 , H04N5/3535 , H04N5/355 , H04N5/37452
Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.
Abstract translation: 公开了一种高动态范围CMOS图像传感器。 图像传感器的像素包含像素内存。 此外,像素可以具有变化的积分周期。 积分周期部分地由先前积分周期中存储在像素内存中的信号确定。
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