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    METHOD FOR THE PREPARATION OF BIOCOMPATIBLE POLYMERIC NANOPARTICLES FOR DRUG DELIVERY AND NANOPARTICLES PREPARED THEREBY
    43.
    发明申请
    METHOD FOR THE PREPARATION OF BIOCOMPATIBLE POLYMERIC NANOPARTICLES FOR DRUG DELIVERY AND NANOPARTICLES PREPARED THEREBY 审中-公开
    用于制备药物递送的生物成分聚合物纳米颗粒的方法及其制备的纳米颗粒

    公开(公告)号：US20100303922A1

    公开(公告)日：2010-12-02

    申请号：US12597451

    申请日：2008-04-22

    Applicant: Soon Hong Yuk ,  Keun Sang Oh ,  Won Tae Jung ,  Youn Woong Choi ,  Sang Min Cho ,  Dae Chul Ha ,  Do Hyung Kim ,  Seong Woo Ahn ,  Jeong Hyun Choi

    Inventor： Soon Hong Yuk ,  Keun Sang Oh ,  Won Tae Jung ,  Youn Woong Choi ,  Sang Min Cho ,  Dae Chul Ha ,  Do Hyung Kim ,  Seong Woo Ahn ,  Jeong Hyun Choi

    IPC: A61K9/14 ,  A61K31/337 ,  A61P35/00

    CPC classification number: C08L71/02 ,  A61K9/1273 ,  A61K9/5146 ,  A61K9/5192 ,  A61K31/337 ,  B82Y30/00 ,  C08G2650/58 ,  C08J5/005 ,  C08L2203/02

    Abstract: Disclosed are biocompatible polymeric nanoparticles for drug delivery and a method for preparing the same. They can be prepared by mixing a tri-block copolymer, PEG, and a drug at a predetermined temperature to give a homogeneous polymeric mixture; solidifying the homogeneous polymeric mixture at room temperature; and dissolving the solidified polymeric mixture in an aqueous solution. Based on a polymer melting process, the method makes it easy to produce poloxamer nanoparticles at low cost. The nanoparticles show desired particle sizes suitable for use in drug delivery and a uniform particle size distribution. Consisting of a bilayer structure, the nanoparticles can contain sparingly soluble drugs. Also, the nanoparticles contain no organic solvents and are thus safe to the body because they are free of organic solvent residuals. Further, after being administered into the body, the nanoparticles with a high content of sparingly soluble drug entrapped therein can safely deliver the drug to target sites and stably release the drug at a controlled rate.

    Abstract translation: 公开了用于药物递送的生物相容性聚合物纳米颗粒及其制备方法。 它们可以通过在预定温度下混合三嵌段共聚物PEG和药物来制备均匀的聚合物混合物; 在室温下固化均匀的聚合物混合物; 并将固化的聚合物混合物溶解在水溶液中。 基于聚合物熔融工艺，该方法可以以低成本制备泊洛沙姆纳米粒子。 纳米颗粒显示适合用于药物递送和均匀粒度分布的所需粒度。 由双层结构构成，纳米粒子可以含有微溶药物。 此外，纳米颗粒不含有机溶剂，因此对身体是安全的，因为它们不含有机溶剂残留物。 此外，在被施用于体内之后，具有高含量的微溶药物的纳米颗粒被包埋在其中可以将药物安全地递送到靶位点并以受控的速率稳定地释放药物。

    Semiconductor memory device capable of detecting bridge defects and bridge defect detecting method performed in the semiconductor memory device
    44.
    发明授权
    Semiconductor memory device capable of detecting bridge defects and bridge defect detecting method performed in the semiconductor memory device 有权
    能够检测在半导体存储器件中执行的桥接缺陷和桥接缺陷检测方法的半导体存储器件

    公开(公告)号：US07692985B2

    公开(公告)日：2010-04-06

    申请号：US11775513

    申请日：2007-07-10

    Applicant: Soon-hong Ahn ,  Chi-wook Kim

    Inventor： Soon-hong Ahn ,  Chi-wook Kim

    IPC: G11C7/00

    CPC classification number: G11C29/02 ,  G11C11/401 ,  G11C29/025

    Abstract: A bridge defect detecting method performed in a semiconductor memory device that includes a plurality of memory cells arranged at intersections between a plurality of word lines and a plurality of bit lines and a plurality of sense amplifiers connected to the bit lines, includes the operations of: enabling a first sense amplifier and a second sense amplifier; keeping the first sense amplifier in an enabled state and disabling the second sense amplifier; enabling the second sense amplifier, and detecting a bridge defect between the first memory cell and the second memory cell by reading data from a first memory cell of a first bit line connected to the first sense amplifier and a second memory cell of a second bit line connected to the second sense amplifier.

    Abstract translation: 一种在半导体存储器件中执行的桥缺陷检测方法，包括布置在多个字线和多个位线之间的交叉处的多个存储器单元和连接到位线的多个读出放大器的操作包括以下操作： 实现第一读出放大器和第二读出放大器; 将所述第一读出放大器保持在使能状态并禁用所述第二读出放大器; 通过从连接到第一读出放大器的第一位线的第一存储器单元读取数据和第二位线的第二存储器单元来检测第一存储器单元和第二存储器单元之间的桥接缺陷， 连接到第二感测放大器。

    METHOD OF MANUFACTURING A DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY APPARATUS USING THE SAME
    47.
    发明申请
    METHOD OF MANUFACTURING A DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY APPARATUS USING THE SAME 失效
    制造显示基板的方法及使用其制造显示装置的方法

    公开(公告)号：US20090280591A1

    公开(公告)日：2009-11-12

    申请号：US12421555

    申请日：2009-04-09

    Applicant: Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

    Inventor： Pil-Soon Hong ,  Jung-In Park ,  Hi-Kuk Lee

    IPC: H01L21/28

    CPC classification number: H01L27/1288 ,  H01L27/3248 ,  H01L2227/323

    Abstract: Provided is a method of manufacturing a display substrate. In the method, a gate line, a data line crossing the gate line, and a switching device are formed on a base substrate. A passivation layer, a first resist layer and a second resist layer are formed on the base substrate. The first resist layer and the second resist layer are patterned to form a resist pattern and an etch-stop pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern. A portion of the passivation layer is removed to form a contact hole on a drain electrode of the switching device. A pixel electrode electrically connected to the switching device through the contact hole is formed. Thus, an undercut between an etch-stop pattern and a resist pattern may be more easily formed without over-etching a passivation layer.

    Abstract translation: 提供一种制造显示基板的方法。 在该方法中，在基底基板上形成栅极线，与栅极线交叉的数据线以及开关元件。 在基底基板上形成钝化层，第一抗蚀剂层和第二抗蚀剂层。 图案化第一抗蚀剂层和第二抗蚀剂层以形成抗蚀剂图案和蚀刻停止图案，该蚀刻停止图案具有从抗蚀剂图案的侧壁突出的侧壁。 去除钝化层的一部分以在开关器件的漏电极上形成接触孔。 形成通过接触孔与开关装置电连接的像素电极。 因此，可以更容易地形成蚀刻停止图案和抗蚀剂图案之间的底切，而不会过度蚀刻钝化层。

    Transflective type liquid crystal display device and method for manufacturing the same
    48.
    发明申请
    Transflective type liquid crystal display device and method for manufacturing the same 有权
    反射型液晶显示装置及其制造方法

    公开(公告)号：US20080043186A1

    公开(公告)日：2008-02-21

    申请号：US11705095

    申请日：2007-02-12

    Applicant: Soon Hong

    Inventor： Soon Hong

    IPC: G02F1/1335

    CPC classification number: G02F1/133524 ,  G02B6/0011 ,  G02B6/06 ,  G02F1/133371 ,  G02F1/134363

    Abstract: A transflective type liquid crystal display device includes a first substrate having a pixel region, the pixel region including a transmission region and a reflection region that has a reflector formed thereon; a second substrate, which faces the first substrate, and on which a light guiding layer and a color filter layer are formed, the light guiding layer including a first medium and a second medium, a refractive index of the first medium and a refractive index of the second medium being different from each other; a liquid crystal layer interposed between the first and the second substrates; and a backlight assembly positioned outside of the first substrate to provide light onto the first medium in a reflection mode.

    Abstract translation: 半透射型液晶显示装置包括具有像素区域的第一基板，包括透射区域的像素区域和形成有反射器的反射区域; 第二基板，其面对第一基板，并且其上形成有导光层和滤色器层，所述导光层包括第一介质和第二介质，第一介质的折射率和折射率为 第二介质彼此不同; 介于所述第一和第二基板之间的液晶层; 以及位于第一基板外侧的背光组件，以在反射模式下将光提供到第一介质上。

    Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same
    49.
    发明授权
    Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same 有权
    能够防止由闩锁引起的电流的半导体装置及其形成方法

    公开(公告)号：US07309883B2

    公开(公告)日：2007-12-18

    申请号：US10815448

    申请日：2004-04-01

    Applicant: Soon-Hong Ahn ,  Jung-Hwa Lee

    Inventor： Soon-Hong Ahn ,  Jung-Hwa Lee

    IPC: H01L29/72

    CPC classification number: H01L27/0921 ,  H01L21/823878 ,  H01L21/823892

    Abstract: A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a well bias voltage. The second well is adjacent to the first well, and includes an insulating region and a second-type diffusion region outside the insulating region. The third well is adjacent to the second well and includes a first-type diffusion region that receives a first voltage. The insulating region inside the second well along with the first-type well diffusion region of the first well constitute a bipolar junction transistor that cuts off current flowing from the first well to the third well.

    Abstract translation: 半导体器件包括第一，第二和第三阱。 第一阱连接到外部引脚连接到的焊盘，并且包括接收阱偏置电压的第一类型扩散区域。 第二阱与第一阱相邻，并且在绝缘区域之外包括绝缘区域和第二类型扩散区域。 第三阱与第二阱相邻并且包括接收第一电压的第一类型扩散区域。 第二阱内的绝缘区域与第一阱的第一型阱扩散区域一起构成双极结型晶体管，其切断从第一阱流向第三阱的电流。

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