公开(公告)号：US06483161B1

公开(公告)日：2002-11-19

申请号：US09928397

申请日：2001-08-14

Applicant: Yoshiki Kuhara ,  Yasuhiro Iguchi

Inventor： Yoshiki Kuhara ,  Yasuhiro Iguchi

IPC: H01L310203

CPC classification number: H01L31/0203 ,  H01L31/02161

Abstract: A submount including a transparent substrate and at least one wavelength selective absorption layer being piled upon the substrate and having a band gap wavelength &lgr;g1 which is shorter than the necessary light wavelength &lgr;2 but longer than the unnecessary light wavelength &lgr;1. The submount is inserted between a case (package, metallized pattern) and a bottom incidence PD for insulating the PD from the case and for admitting only the necessary light.

Abstract translation: 包括透明基板和至少一个波长选择性吸收层的基座堆叠在基板上并且具有比所需的光波长lambd2短但长于不需要的光波长lambd1的带隙波长lambdg1。 底座插入壳体（包装，金属化图案）和底部入射PD之间，用于将PD与壳体隔离并仅允许所需的光线。

公开(公告)号：US09190544B2

公开(公告)日：2015-11-17

申请号：US13581863

申请日：2011-09-28

Applicant: Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L31/0352 ,  B82Y20/00 ,  H01L31/105 ,  H01L31/18 ,  H01L27/146 ,  H01L29/15

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14652 ,  H01L29/15 ,  H01L31/105 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.

Abstract translation: 提供能够防止短波长侧的响应性劣化的光电二极管等，同时完全提高II型MQW结构的响应性。 光电二极管形成在III-V族化合物半导体衬底上，并包括像素。 光电二极管包括位于基板上的II型MQW结构的吸收层。 MQW结构包括五对或更多对两种不同类型的III-V族化合物半导体层。 两种不同类型的III-V族化合物半导体层之一的厚度，该层具有较高的价带电势，其厚度比另一层的厚度薄。

公开(公告)号：US08921829B2

公开(公告)日：2014-12-30

申请号：US13520007

申请日：2011-03-10

Applicant: Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

Inventor： Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC: H01L29/06 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14652 ,  H01L27/14694

Abstract: The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array 55 includes an n-type buffer layer 2 disposed on an InP substrate 1, an absorption layer 3 having a type-II MQW, a contact layer 5 disposed on the absorption layer, and a p-type region extending to the n-type buffer layer 2 through the absorption layer 3, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junction 15 is formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

Abstract translation: 本发明提供一种在近红外区域具有高的光接收灵敏度的光接收元件阵列等，光学传感器装置和用于制造光接收元件阵列的方法。 光接收元件阵列55包括设置在InP基板1上的n型缓冲层2，具有II型MQW的吸收层3，设置在吸收层上的接触层5和延伸至 通过吸收层3的n型缓冲层2，其中通过选择性扩散形成的p型区域通过未经选择性扩散的区域与相邻的光接收元件的p型区域分离， 在n型缓冲层中，pn结15形成在p型区域的p型载流子浓度和缓冲层的n型载流子浓度的交叉面上。

公开(公告)号：US08729527B2

公开(公告)日：2014-05-20

申请号：US13451031

申请日：2012-04-19

Applicant: Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.

Abstract translation: 光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。 叠层结构形成在III-V族化合物半导体衬底上。 吸收层具有由III-V族化合物半导体构成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。 由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。 扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。 在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

公开(公告)号：US08642943B2

公开(公告)日：2014-02-04

申请号：US13640922

申请日：2010-12-03

Applicant: Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

Inventor： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC: H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC classification number: H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract translation: 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38 @ x @ 0.68）层和GaAs 1-ySby（0.25 @ y @ 0.73）层的对的层叠结构，并且在GaAs1-ySby InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US20130292646A1

公开(公告)日：2013-11-07

申请号：US13979586

申请日：2012-01-07

Applicant: Yasuhiro Iguchi ,  Tadashi Saitoh ,  Yasushi Fujimura ,  Kazunori Tanaka

Inventor： Yasuhiro Iguchi ,  Tadashi Saitoh ,  Yasushi Fujimura ,  Kazunori Tanaka

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/02327 ,  G02B3/00 ,  G02B3/0075 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14685 ,  H01L31/184

Abstract: A light receiving device includes a microlens 21 located in each of regions corresponding to pixels, the microlens being disposed on a rear surface of an InP substrate 1. The microlens is formed by using a resin material having a range of a transmittance of light in the wavelength region between 0.7 and 3 μm of 25% or less, the transmittance being 70% or more.

Abstract translation: 光接收装置包括位于与像素对应的区域的每个区域中的微透镜21，微透镜设置在InP衬底1的后表面上。微透镜通过使用具有在 0.7〜3μm之间的波长区域为25％以下，透射率为70％以上。

公开(公告)号：US08243139B2

公开(公告)日：2012-08-14

申请号：US13063444

申请日：2009-07-24

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H04N7/18

CPC classification number: B82Y20/00 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/035236

Abstract: An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration.

Abstract translation: 提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。 该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带 间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散在光 接收层的浓度为5×1016 / cm3以下。 扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。

公开(公告)号：US20120032147A1

公开(公告)日：2012-02-09

申请号：US13122926

申请日：2009-07-30

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H01L31/0352 ,  B82Y99/00 ,  B82Y20/00

CPC classification number: A61B5/1455 ,  A61B5/14532 ,  G01J3/0218 ,  G01J2003/2866 ,  G01N21/359 ,  G01N21/474 ,  H01L27/1446 ,  H01L31/035209 ,  H01L31/1035

Abstract: Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration. The biological component detection device is characterized in that an examination is conducted by receiving light having at least one wavelength of 3 μm or less, the wavelength being included in an absorption band of the biological component.

Abstract translation: 本发明提供一种生物成分检测装置，其通过使用其中暗电流减小而不使用冷却机构的InP基光电二极管，以高灵敏度检测生物成分，并且灵敏度延伸至1.8μm以上的波长 。 吸收层3具有由III-V族半导体构成的多量子阱结构，通过选择性地扩散吸收层中的杂质元素形成pn结15，并且吸收层中杂质元素的浓度为5× 1016 / cm3以下，扩散浓度分布控制层在扩散前的n型杂质浓度为2×1015 / cm3以下，扩散浓度分布控制层具有与吸收层相邻的部分，该部分具有 杂质浓度低。 生物成分检测装置的特征在于，通过接收具有3μm以下的波长的波长的波长包含在生物成分的吸收带中进行检查。

公开(公告)号：US08058642B2

公开(公告)日：2011-11-15

申请号：US12443575

申请日：2008-07-18

Applicant: Yasuhiro Iguchi ,  Hiroshi Okada ,  Yuichi Kawamura

Inventor： Yasuhiro Iguchi ,  Hiroshi Okada ,  Yuichi Kawamura

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L27/14649 ,  H01L31/03046 ,  Y02E10/544

Abstract: A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

Abstract translation: 提供能够接收1.7μm〜3.5μm的近红外到中红外光的受光元件装置。 基板由InP形成，超晶格光接收层由通过交替堆叠包括In，Ga，As，N的III-V族化合物半导体的下降层形成的2型结的超晶格形成，并且 包含Ga，As，Sb的III-V族化合物半导体的上升层。 下降层和上升层的膜厚分别为3nm〜10nm。 超晶格光接收层的整个厚度为2μm-7μm。 超晶格光接收层的构成膜与InP的晶格失配为±0.2％以下。

公开(公告)号：US20110164136A1

公开(公告)日：2011-07-07

申请号：US13063444

申请日：2009-07-24

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H04N7/18 ,  H01L31/0352 ,  H04N5/225

CPC classification number: B82Y20/00 ,  H01L27/14649 ,  H01L27/14694 ,  H01L31/035236

Abstract: An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration.

Abstract translation: 提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。 该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带 间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散，对每个受光元件形成pn结，杂质选择性地扩散在光 接收层的浓度为5×1016 / cm3以下。 扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。