公开(公告)号：US20160314942A1

公开(公告)日：2016-10-27

申请号：US15199068

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20160314940A1

公开(公告)日：2016-10-27

申请号：US15199046

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20150134128A1

公开(公告)日：2015-05-14

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Kartik RAMASWAMY ,  Bryan LlAO ,  Sergio SHOJI ,  Duy D. NGUYEN ,  Hamid NOORBAKHSH ,  David PALAGASHVILI

IPC: G05D23/19 ,  G05B15/02 ,  H01J37/32

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

公开(公告)号：US20250112075A1

公开(公告)日：2025-04-03

申请号：US18375339

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Alexander SULYMAN ,  Timothy Joseph FRANKLIN ,  Jaeyong CHO ,  Joseph F. SOMMERS ,  Joseph F. BEHNKE ,  Sajad YAZDANI ,  Xue CHANG ,  Kartik RAMASWAMY ,  Tomoaki KOHZU ,  Kyounghwan NA

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by a metal bond layer. The substrate support assembly includes a blocking ring disposed around the metal bond layer.

公开(公告)号：US20250046576A1

公开(公告)日：2025-02-06

申请号：US18365261

申请日：2023-08-04

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT

IPC: H01J37/32

Abstract: Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

公开(公告)号：US20240030002A1

公开(公告)日：2024-01-25

申请号：US18375886

申请日：2023-10-02

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32183 ,  H01L21/31116 ,  H01J37/32577 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/2007

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20230402254A1

公开(公告)日：2023-12-14

申请号：US17835864

申请日：2022-06-08

Applicant: Applied Materials, Inc.

Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO ,  Fernando SILVEIRA

IPC: H01J37/32 ,  H03K17/687

CPC classification number: H01J37/32091 ,  H03K17/687 ,  H01J2237/327

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

公开(公告)号：US20230343555A1

公开(公告)日：2023-10-26

申请号：US17726930

申请日：2022-04-22

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yang YANG ,  Nicolas John BRIGHT

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32146 ,  H01J37/32935 ,  H01J37/32183 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/334

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

公开(公告)号：US20230170194A1

公开(公告)日：2023-06-01

申请号：US17537107

申请日：2021-11-29

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Haitao WANG ,  Kartik RAMASWAMY

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32174 ,  H01J2237/3341 ,  H01J37/32091

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for controlling ion energy distribution in a processing chamber. One embodiment of the present disclosure is directed to a method for plasma processing. The method generally includes: determining a voltage and/or power associated with a bias signal to be applied to a first electrode of a processing chamber, the voltage being determined based on a pressure inside a processing region of the processing chamber such that the voltage is insufficient to generate a plasma inside the chamber by application of the voltage and/or power to the first electrode; applying the first bias signal in accordance with the determined voltage and/or power to the first electrode; and applying a second bias signal to a second electrode of the processing chamber, wherein the second bias signal is configured to generate a plasma in the processing region and the first bias is applied while the second bias is applied.

公开(公告)号：US20230118651A1

公开(公告)日：2023-04-20

申请号：US17823702

申请日：2022-08-31

Applicant: Applied Materials, Inc.

Inventor： Timothy Joseph FRANKLIN ,  Jaeyong CHO ,  Alexander SULYMAN ,  Xue CHANG ,  Kartik RAMASWAMY ,  Steven E. BABAYAN ,  Anwar HUSAIN ,  David COUMOU

IPC: H01J37/32 ,  H01L21/683

Abstract: Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.