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    MULTIPLE ELECTRODE SUBSTRATE SUPPORT ASSEMBLY AND PHASE CONTROL SYSTEM
    1.
    发明申请
    MULTIPLE ELECTRODE SUBSTRATE SUPPORT ASSEMBLY AND PHASE CONTROL SYSTEM 审中-公开
    多电极基板支撑组件和相位控制系统

    公开(公告)号：US20160372307A1

    公开(公告)日：2016-12-22

    申请号：US14742142

    申请日：2015-06-17

    Applicant: Applied Materials, Inc.

    Inventor： YANG YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

    IPC: H01J37/32 ,  C23C14/48 ,  C23C16/458 ,  C23C16/505

    CPC classification number: H01J37/32715 ,  H01J37/32165 ,  H01J37/32568 ,  H01J37/3299

    Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

    Abstract translation: 本文所述的实施方案提供了能够调整等离子体室内的等离子体的衬底支撑组件。 在一个实施例中，提供了一种用于调谐腔室中的等离子体的方法。 该方法包括向衬底支撑组件中的第一电极提供第一射频功率和直流电力，在与第一电极不同的位置处向衬底支撑组件中的第二电极提供第二射频功率，监测参数 的第一和第二射频功率，并且基于所监视的参数来调整第一和第二射频功率中的一个或两个。

    SUBSTRATE EDGE RING THAT EXTENDS PROCESS ENVIRONMENT BEYOND SUBSTRATE DIAMETER
    2.
    发明申请
    SUBSTRATE EDGE RING THAT EXTENDS PROCESS ENVIRONMENT BEYOND SUBSTRATE DIAMETER 有权

    公开(公告)号：US20220293397A1

    公开(公告)日：2022-09-15

    申请号：US17198141

    申请日：2021-03-10

    Applicant: Applied Materials, Inc.

    Inventor： Michael R. RICE ,  Kenneth S. COLLINS ,  James David CARDUCCI ,  Shahid RAUF ,  Kartik RAMASWAMY

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

    Abstract: Embodiments of substrates supports for use in process chambers are provided herein. In some embodiments, a substrate support includes: a dielectric plate having a first side configured to support a substrate having a given diameter and including an annular groove disposed in the first side, wherein the annular groove has an inner diameter that is less than the given diameter and an outer diameter that is greater than the given diameter, wherein the dielectric plate includes a chucking electrode; an insert ring disposed in the annular groove of the dielectric plate; and an edge ring disposed on the dielectric plate, wherein the edge ring has an inner diameter that is greater than the given diameter and less than the outer diameter of the annular groove such that the edge ring is disposed over a portion of the insert ring.

    REDUCING ASPECT RATIO DEPENDENT ETCH WITH DIRECT CURRENT BIAS PULSING
    3.
    发明公开
    REDUCING ASPECT RATIO DEPENDENT ETCH WITH DIRECT CURRENT BIAS PULSING 审中-公开

    公开(公告)号：US20240162007A1

    公开(公告)日：2024-05-16

    申请号：US17984772

    申请日：2022-11-10

    Applicant: Applied Materials, Inc.

    Inventor： Deyang LI ,  Sunil SRINIVASAN ,  Yi-Chuan CHOU ,  Shahid RAUF ,  Kuan-Ting LIU ,  Jason A. KENNEY ,  Chung LIU ,  Olivier P. JOUBERT ,  Shreeram Jyoti DASH ,  Aaron EPPLER ,  Michael Thomas NICHOLS

    IPC: H01J37/32

    CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32146 ,  H01J2237/3341 ,  H01J2237/3346

    Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing. The ability to synchronize and control waveform characteristics of a voltage waveform bias established on a substrate during processing allows for an improved control of the generated plasma and process of forming, for example, high-aspect ratio features in the surface of the substrate by a reactive ion etching process. As a result, greater precision for plasma processing can be achieved, which is described herein in more detail.

    PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS
    9.
    发明申请
    PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS 审中-公开
    等离子体加工设备和用于调谐电机的衬套组件

    公开(公告)号：US20150279633A1

    公开(公告)日：2015-10-01

    申请号：US14738324

    申请日：2015-06-12

    Applicant: Applied Materials, Inc.

    Inventor： James D. CARDUCCI ,  Zhigang CHEN ,  Shahid RAUF ,  Kenneth S. COLLINS

    IPC: H01J37/32

    CPC classification number: H01J37/32623 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32495 ,  H01L21/67069 ,  Y10T428/13

    Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of three or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

    Abstract translation: 本发明公开了一种等离子体处理装置，其包括室盖，室主体和支撑组件。 室主体限定用于容纳等离子体的处理容积，用于支撑室盖。 腔室主体包括室侧壁，底壁和衬套组件。 腔室侧壁和底壁限定用于容纳等离子体的处理体积。 设置在处理容积内的衬套组件包括形成在其上的三个或更多个槽，用于提供轴向对称的RF电流路径。 支撑组件支撑用于在室主体内进行加工的基板。 利用具有多个对称槽的衬套组件，本发明可以防止其电磁场为方位角不对称。

    APPARATUS TO REDUCE POLYMERS DEPOSITION
    10.
    发明申请
    APPARATUS TO REDUCE POLYMERS DEPOSITION 审中-公开

    公开(公告)号：US20200185256A1

    公开(公告)日：2020-06-11

    申请号：US16657604

    申请日：2019-10-18

    Applicant: Applied Materials, Inc.

    Inventor： Andrew NGUYEN ,  Xue CHANG ,  Shahid RAUF ,  Jason A. KENNEY

    IPC: H01L21/687 ,  H01L21/683

    Abstract: Implementations of the present disclosure provide a process kit for an electrostatic chuck. In one implementation, a substrate support assembly is provided. The substrate support assembly includes an electrostatic chuck having a first recess formed in an upper portion of the electrostatic chuck. A process kit surrounds the electrostatic chuck. The process kit includes an inner ring and an outer ring disposed radially outward of the inner ring. The outer ring includes a second recess formed in an upper portion of the upper ring. The inner ring is positioned within and is supported by the first recess and the second recess. An upper surface of the inner ring and an upper surface of the outer ring are co-planar.

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