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    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    43.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 审中-公开

    公开(公告)号：US20170323776A1

    公开(公告)日：2017-11-09

    申请号：US15581726

    申请日：2017-04-28

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija Matero ,  Antti Niskanen ,  Suvi P. Haukka

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

    CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    Si precursors for deposition of SiN at low temperatures
    45.
    发明授权
    Si precursors for deposition of SiN at low temperatures 有权
    Si前体，用于在低温下沉积SiN

    公开(公告)号：US09564309B2

    公开(公告)日：2017-02-07

    申请号：US14167904

    申请日：2014-01-29

    Applicant: ASM IP HOLDING B.V.

    Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

    IPC: H01L21/02 ,  H01L21/311

    CPC classification number: H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111 ,  H01L21/823431

    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

    Abstract translation: 提供了通过原子层沉积（ALD）沉积氮化硅膜的方法和前体。 在一些实施方案中，硅前体包含碘配体。 当沉积到诸如FinFETS或其它类型的多栅极FET的三维结构上时，氮化硅膜可以具有相对均匀的垂直和水平部分的蚀刻速率。 在一些实施方案中，本公开的各种氮化硅膜具有小于具有稀释HF（0.5％）的热氧化物去除速率的一半的蚀刻速率。

    SELECTIVE DEPOSITION
    47.
    发明申请
    SELECTIVE DEPOSITION 有权
    选择性沉积

    公开(公告)号：US20160222504A1

    公开(公告)日：2016-08-04

    申请号：US15013637

    申请日：2016-02-02

    Applicant: ASM IP HOLDING B.V.

    Inventor： Suvi P. Haukka ,  Eva Tois

    IPC: C23C16/04 ,  C23C16/56 ,  C23C16/18 ,  C23C16/02 ,  C23C16/40 ,  C23C16/34

    CPC classification number: C23C16/04 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/45525

    Abstract: Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.

    Abstract translation: 提供了用于相对于第二不同表面选择性地沉积衬底的表面的方法。 示例性的沉积方法可以包括相对于第二不同的表面选择性地沉积诸如包含镍，氮化镍，钴，铁和/或氧化钛的材料在诸如SiO 2表面的第一表面上，例如 作为H终止的表面，具有相同的底物。 方法可以包括在沉积之前处理基底的表面以提供H终止。

    SULFUR-CONTAINING THIN FILMS
    48.
    发明申请
    SULFUR-CONTAINING THIN FILMS 有权
    含硫的薄膜

    公开(公告)号：US20150170914A1

    公开(公告)日：2015-06-18

    申请号：US14133511

    申请日：2013-12-18

    Applicant: ASM IP HOLDING B.V.

    Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael Givens ,  Jan Willem Maes ,  Qi Xie

    IPC: H01L21/02

    CPC classification number: H01L21/02568 ,  C23C16/0227 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/02557 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264

    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

    Abstract translation: 在一些方面，提供了形成金属硫化物薄膜的方法。 根据一些方法，金属硫化物薄膜在循环过程中在反应空间中沉积在基底上，其中至少一个循环包括交替地和顺序地接触基底与第一气相金属反应物和第二气相硫 反应物。 在一些方面，提供了在基板表面上形成三维结构的方法。 在一些实施方案中，该方法包括在基材表面上形成金属硫化物薄膜，并在金属硫化物薄膜上形成覆盖层。 衬底表面可以包括高迁移率通道。

    ATOMIC LAYER ETCHING PROCESSES
    49.
    发明申请
    ATOMIC LAYER ETCHING PROCESSES 有权

    公开(公告)号：US20250037970A1

    公开(公告)日：2025-01-30

    申请号：US18790894

    申请日：2024-07-31

    Applicant: ASM IP Holding B.V.

    Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko Tuominen ,  Chiyu Zhu

    IPC: H01J37/32 ,  C23F1/12 ,  C23G5/00 ,  H01L21/311 ,  H01L21/3213

    Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

    Selective deposition using hydrophobic precursors
    50.
    发明授权
    Selective deposition using hydrophobic precursors 有权

    公开(公告)号：US12080548B2

    公开(公告)日：2024-09-03

    申请号：US17370263

    申请日：2021-07-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

    CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

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