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41.发明申请公开(公告)号：US20220149175A1
公开(公告)日：2022-05-12
申请号：US17583371
申请日：2022-01-25
Applicant: ASM IP Holding B.V.
Inventor： Petri Raisanen , Michael Givens , Eric James Shero
Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
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公开(公告)号：US11139383B2
公开(公告)日：2021-10-05
申请号：US16849144
申请日：2020-04-15
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Michael Givens , Eric Shero , Jerry Winkler , Petri Räisänen , Timo Asikainen , Chiyu Zhu , Jaakko Anttila
IPC: H01L29/49 , H01L21/285 , H01L21/3205 , C23C16/06 , C23C16/34 , C23C16/455 , H01L29/51
Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
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公开(公告)号：US20210301392A1
公开(公告)日：2021-09-30
申请号：US17216466
申请日：2021-03-29
Applicant: ASM IP Holding B.V.
Inventor： Andrea Illiberi , Giuseppe Alessio Verni , Shaoren Deng , Daniele Chiappe , Eva Tois , Marko Tuominen , Michael Givens
Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.
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公开(公告)号：US20190043962A1
公开(公告)日：2019-02-07
申请号：US15997520
申请日：2018-06-04
Applicant: ASM IP Holding B.V.
Inventor： Suvi Haukka , Michael Givens , Eric Shero , Jerry Winkler , Petri Räisänen , Timo Asikainen , Chiyu Zhu , Jaakko Anttila
IPC: H01L29/49 , C23C16/455 , H01L21/3205 , H01L21/285 , C23C16/06 , C23C16/34 , H01L29/51
Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.
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公开(公告)号：US20150170907A1
公开(公告)日：2015-06-18
申请号：US14133509
申请日：2013-12-18
Applicant: ASM IP HOLDING B.V.
Inventor： Suvi P. Haukka , Fu Tang , Michael Givens , Jan Willem Maes , Qi Xie
IPC: H01L21/02
CPC classification number: H01L21/02175 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/02334 , H01L21/0237 , H01L21/02395 , H01L21/02557 , H01L21/02568 , H01L21/0262 , H01L21/02661 , H01L21/28264 , H01L29/2203 , H01L29/267 , H01L29/66795 , H01L29/7786 , H01L29/78
Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
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Patent Agency Ranking
公开(公告)号：US12217954B2
公开(公告)日：2025-02-04
申请号：US17407839
申请日：2021-08-20
Applicant: ASM IP Holding B.V.
Inventor： Shaoren Deng , Andrea Illiberi , Daniele Chiappe , Eva Tois , Giuseppe Alessio Verni , Michael Givens , Varun Sharma , Chiyu Zhu , Shinya Iwashita , Charles Dezelah , Viraj Madhiwala , Jan Willem Maes , Marko Tuominen , Anirudhan Chandrasekaran
Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.
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公开(公告)号：US12148609B2
公开(公告)日：2024-11-19
申请号：US17472981
申请日：2021-09-13
Applicant: ASM IP Holding B.V.
Inventor： Varun Sharma , Daniele Chiappe , Eva Tois , Viraj Madhiwala , Marko Tuominen , Charles Dezelah , Michael Givens , Tom Blomberg
IPC: H01L21/02
Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.
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公开(公告)号：US20240076775A1
公开(公告)日：2024-03-07
申请号：US18303095
申请日：2023-04-19
Applicant: ASM IP HOLDING B.V.
Inventor： Andrea Illiberi , Giuseppe Alessio Verni , Shaoren Deng , Daniele Chiappe , Eva Tois , Marko Tuominen , Michael Givens
IPC: C23C16/40 , B01J31/12 , C23C16/455
CPC classification number: C23C16/401 , B01J31/122 , C23C16/45534 , C23C16/45553
Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.
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公开(公告)号：US11898240B2
公开(公告)日：2024-02-13
申请号：US17216466
申请日：2021-03-29
Applicant: ASM IP Holding B.V.
Inventor： Andrea Illiberi , Giuseppe Alessio Verni , Shaoren Deng , Daniele Chiappe , Eva Tois , Marko Tuominen , Michael Givens
CPC classification number: C23C16/04 , B01J21/02 , C23C16/402 , C23C22/77 , C23C22/82
Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.
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公开(公告)号：US20230243032A1
公开(公告)日：2023-08-03
申请号：US18103594
申请日：2023-01-31
Applicant: ASM IP Holding B.V.
Inventor： Charles Dezelah , Andrea Illiberi , Varun Sharma , Bart Vermeulen , Michael Givens
IPC: C23C16/30 , C23C16/455 , C23C16/56
CPC classification number: C23C16/30 , C23C16/45553 , C23C16/56
Abstract: A method and system for forming a copper iodide layer on a surface of a substrate are disclosed. Exemplary methods include using a cyclic deposition process that includes providing a copper precursor to a reaction chamber and providing an iodine reactant to the reaction chamber. Exemplary methods can further include providing a reducing agent and/or providing a dopant reactant to the reaction chamber. Structures formed using the method are also described. The structures can be used to form devices, such as memory devices.
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