公开(公告)号：US20210118671A1

公开(公告)日：2021-04-22

申请号：US17072524

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Oreste Madia ,  Andrea Illiberi ,  Giuseppe Alessio Verni ,  Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40

Abstract: Methods of forming indium germanium zinc oxide (IGeZO) films by vapor deposition are provided. The IGeZO films may, for example, serve as a channel layer in a transistor device. In some embodiments atomic layer deposition processes for depositing IGeZO films comprise an IGeZO deposition cycle comprising alternately and sequentially contacting a substrate in a reaction space with a vapor phase indium precursor, a vapor phase germanium precursor, a vapor phase zinc precursor and an oxygen reactant. In some embodiments the ALD deposition cycle additionally comprises contacting the substrate with an additional reactant comprising one or more of NH3, N2O, NO2 and H2O2.