公开(公告)号：US10714315B2

公开(公告)日：2020-07-14

申请号：US13651144

申请日：2012-10-12

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Todd Dunn ,  Eric Shero ,  Kyle Fondurulia

IPC: H01J37/32 ,  C23C16/455

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

公开(公告)号：US20170154778A1

公开(公告)日：2017-06-01

申请号：US15429924

申请日：2017-02-10

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US20160196977A1

公开(公告)日：2016-07-07

申请号：US14987413

申请日：2016-01-04

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Maes ,  Suvi Haukka ,  Eric Shero ,  Tom Blomberg ,  Dong Li

IPC: H01L21/28 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

公开(公告)号：US09340874B2

公开(公告)日：2016-05-17

申请号：US14634342

申请日：2015-02-27

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: B01J19/00 ,  C23C16/44 ,  B01J8/00 ,  H01L21/67 ,  C23C16/458

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

公开(公告)号：US08841182B1

公开(公告)日：2014-09-23

申请号：US13829856

申请日：2013-03-14

Applicant: ASM IP Holding B.V.

Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Willem Maes ,  Suvi Haukka ,  Eric Shero ,  Tom E. Blomberg ,  Dong Li

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/02

CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.

Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施例中，包括碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包括钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，第二源化学物质包括金属和碳，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 处理可以在金属碳化物膜上形成覆盖层。

公开(公告)号：US20140273428A1

公开(公告)日：2014-09-18

申请号：US13830322

申请日：2013-03-14

Applicant: ASM IP HOLDING B.V.

Inventor： Eric Shero ,  Suvi Haukka

IPC: H01L21/28 ,  H01L21/02

CPC classification number: H01L21/02211 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76841 ,  H01L29/4966 ,  H01L29/517 ,  Y10S438/932

Abstract: The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition.

公开(公告)号：US12237392B2

公开(公告)日：2025-02-25

申请号：US17465127

申请日：2021-09-02

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L29/49 ,  C23C16/06 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L29/51

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

公开(公告)号：US12221357B2

公开(公告)日：2025-02-11

申请号：US17238424

申请日：2021-04-23

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric Shero

IPC: C01G31/04 ,  C23C14/06 ,  C23C14/54 ,  C23C16/08 ,  C23C16/455 ,  C23C16/52 ,  C23C16/54 ,  C23C18/16

Abstract: Methods of stabilizing a vanadium compound in a solution, compositions including a vanadium compound and a stabilizing agent, apparatus including the composition, systems that use the composition, and methods of using the compositions, apparatus, and systems are disclosed. Use of the stabilizing agent allows for use of desired precursors, while mitigating unwanted decomposition of the precursors.

公开(公告)号：US20230234014A1

公开(公告)日：2023-07-27

申请号：US18100331

申请日：2023-01-23

Applicant: ASM IP Holding B.V.

Inventor： Venkata Motupalli ,  Pawan Sharma ,  Ankit Kimtee ,  Eric Shero ,  Todd Dunn

IPC: B01J19/00

CPC classification number: B01J19/004 ,  B01J19/0046

Abstract: A source vessel weight monitoring assembly for use in reactor systems to provide real-time and direct measurements of the availability of source or process materials from a source vessel. The assembly includes one or more force or load sensors, such as load cells, positioned between a bottom wall of the source vessel and a support element for the vessel (e.g., a base of a source vessel enclosure). The sensors are positioned to at least partially support the vessel, and a signal conditioning element processes the output electrical signals from the sensors, then a controller processes the output signals from the signal conditioning components with a conversion factor, for example, to determine a current weight of the source vessel and process material (e.g., solid, liquid, or gaseous precursor) stored therein. The controller uses this weight to calculate the amount of available process material or chemistry in the source vessel.

公开(公告)号：US11501956B2

公开(公告)日：2022-11-15

申请号：US16878443

申请日：2020-05-19

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Todd Dunn ,  Eric Shero ,  Kyle Fondurulia

IPC: H01J37/32 ,  C23C16/455

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.