中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

74 records (took 0.019 seconds)

    Silane and borane treatments for titanium carbide films
    41.
    发明授权
    Silane and borane treatments for titanium carbide films 有权
    用于碳化钛膜的硅烷和硼烷处理

    公开(公告)号：US08841182B1

    公开(公告)日：2014-09-23

    申请号：US13829856

    申请日：2013-03-14

    Applicant: ASM IP Holding B.V.

    Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Willem Maes ,  Suvi Haukka ,  Eric Shero ,  Tom E. Blomberg ,  Dong Li

    IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/02

    CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

    Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.

    Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施例中，包括碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包括钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，第二源化学物质包括金属和碳，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分的硅烷或硼烷。 处理可以在金属碳化物膜上形成覆盖层。

    DEPOSITION OF SMOOTH METAL NITRIDE FILMS
    42.
    发明申请
    DEPOSITION OF SMOOTH METAL NITRIDE FILMS 有权
    沉积金属硝酸盐膜

    公开(公告)号：US20140273452A1

    公开(公告)日：2014-09-18

    申请号：US13802157

    申请日：2013-03-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Tom E. Blomberg ,  Jaakko Anttila

    IPC: H01L21/285

    CPC classification number: H01L21/28556 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

    Abstract: In one aspect, methods of forming smooth ternary metal nitride films, such as TixWyNz films, are provided. In some embodiments, the films are formed by an ALD process comprising multiple super-cycles, each super-cycle comprising two deposition sub-cycles. In one sub-cycle a metal nitride, such as TiN is deposited, for example from TiCl4 and NH3, and in the other sub-cycle an elemental metal, such as W, is deposited, for example from WF6 and Si2H6. The ratio of the numbers of each sub-cycle carried out within each super-cycle can be selected to achieve a film of the desired composition and having desired properties.

    Abstract translation: 在一方面，提供了形成平滑三元金属氮化物膜的方法，例如TixWyNz膜。 在一些实施例中，通过包括多个超级循环的ALD工艺形成膜，每个超周期包括两个沉积子循环。 在一个子周期中，例如从TiCl 4和NH 3沉积诸如TiN的金属氮化物，并且在另一个子周期中沉积诸如W的元素金属，例如WF 6和Si 2 H 6。 可以选择在每个超级循环内执行的每个子循环的数量的比例以获得所需组合物的膜并具有期望的性质。

    SELECTIVE DEPOSITION ON METAL OR METALLIC SURFACES RELATIVE TO DIELECTRIC SURFACES
    48.
    发明申请
    SELECTIVE DEPOSITION ON METAL OR METALLIC SURFACES RELATIVE TO DIELECTRIC SURFACES 有权

    公开(公告)号：US20220025513A1

    公开(公告)日：2022-01-27

    申请号：US17450742

    申请日：2021-10-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Elina Färm ,  Tom E. Blomberg

    IPC: C23C16/04 ,  H01L21/285 ,  H01L21/02 ,  C23C16/42 ,  C23C16/56 ,  C23C16/455

    Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

    Atomic layer etching processes
    49.
    发明授权
    Atomic layer etching processes 有权

    公开(公告)号：US11183367B2

    公开(公告)日：2021-11-23

    申请号：US16881868

    申请日：2020-05-22

    Applicant: ASM IP Holding B.V.

    Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

    IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00 ,  H01L21/3213

    Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

    PHOTOACTIVE DEVICES AND MATERIALS
    50.
    发明申请
    PHOTOACTIVE DEVICES AND MATERIALS 有权

    公开(公告)号：US20210074865A1

    公开(公告)日：2021-03-11

    申请号：US17087924

    申请日：2020-11-03

    Applicant: ASM IP HOLDING B.V.

    Inventor： Tom E. Blomberg ,  Hannu Huotari

    IPC: H01L31/0232 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  C23C14/06 ,  C23C16/455 ,  C23C16/30 ,  H01L31/18 ,  H01L33/00 ,  H01L33/58 ,  C23C16/22

    Abstract: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.

Patent Agency Ranking