公开(公告)号：US08992689B2

公开(公告)日：2015-03-31

申请号：US13408703

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32357 ,  H01L21/67201

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract translation: 提供从底物中除去含卤素残基的方法。 通过结合加热和等离子体消除步骤，可以提高制造产量。 此外，通过适当地控制减压室中的压力，也可以提高除去效率。

公开(公告)号：US20130206594A1

公开(公告)日：2013-08-15

申请号：US13783776

申请日：2013-03-04

Applicant: Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

Inventor： Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32935

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract translation: 等离子体蚀刻速率分布的偏斜校正是通过倾斜顶置RF源功率施加器围绕倾斜轴进行的，该倾斜轴的角度由处理数据中的偏斜确定。 完整的自由度通过结合三个轴向运动伺服机构来提供，该伺服机构支撑顶板RF源功率施加器悬挂在其上的浮动板。

公开(公告)号：US08398814B2

公开(公告)日：2013-03-19

申请号：US12499742

申请日：2009-07-08

Applicant: Ajit Balakrishna ,  Jason Andrew Kenney ,  Andrew Nguyen ,  Kenneth Collins

Inventor： Ajit Balakrishna ,  Jason Andrew Kenney ,  Andrew Nguyen ,  Kenneth Collins

IPC: H01L21/3065

CPC classification number: C23C16/4412 ,  C23C16/45591

Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract translation: 描述了可调气流均衡器。 在一个实施例中，可调流量均衡器包括具有主开口和次开口的气流均衡器板。 主开口可以围绕衬底支撑件，并且次级开口可以配置有调谐器。 在一个实施例中，衬底支撑件可以相对于气流均衡器板垂直调节。 可以通过调节在气流均衡器板中配置有次级开口的调谐器和/或通过调节具有相对于气流均衡器板的向内锥形裙部528的垂直定位的衬底支撑板的高度来微调流动均匀性 520。

公开(公告)号：US08360003B2

公开(公告)日：2013-01-29

申请号：US12501966

申请日：2009-07-13

Applicant: Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

Inventor： Andrew Nguyen ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Samer Banna ,  Anchel Sheyner ,  Valentin N. Todorow

IPC: C23C16/00 ,  H01L21/306

CPC classification number: H01J37/16 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01L31/18

Abstract: In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.

Abstract translation: 在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。 等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度 在房间里 侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

公开(公告)号：US08118938B2

公开(公告)日：2012-02-21

申请号：US13191850

申请日：2011-07-27

Applicant: James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

Inventor： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

公开(公告)号：US20120034136A1

公开(公告)日：2012-02-09

申请号：US13050481

申请日：2011-03-17

Applicant: Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

Inventor： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

IPC: B01J19/08

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：US20110005680A1

公开(公告)日：2011-01-13

申请号：US12499742

申请日：2009-07-08

Applicant: Ajit Balakrishna ,  Jason Andrew Kenney ,  Andrew Nguyen ,  Kenneth Collins

Inventor： Ajit Balakrishna ,  Jason Andrew Kenney ,  Andrew Nguyen ,  Kenneth Collins

IPC: H01L21/3065 ,  C23C16/54

CPC classification number: C23C16/4412 ,  C23C16/45591

Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract translation: 描述了可调气流均衡器。 在一个实施例中，可调流量均衡器包括具有主开口和次开口的气流均衡器板。 主开口可以围绕衬底支撑件，并且次级开口可以配置有调谐器。 在一个实施例中，衬底支撑件可以相对于气流均衡器板垂直调节。 可以通过调节在气流均衡器板中配置有次级开口的调谐器和/或通过调节具有相对于气流均衡器板的向内锥形裙部528的垂直定位的衬底支撑板的高度来微调流动均匀性 520。

公开(公告)号：US07767561B2

公开(公告)日：2010-08-03

申请号：US10896113

申请日：2004-07-20

Applicant: Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

Inventor： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC: H01L21/425

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01J37/32357 ,  H01L21/2236 ,  H01L21/31612

Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.

Abstract translation: 用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域， 具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

公开(公告)号：US07642180B2

公开(公告)日：2010-01-05

申请号：US11901969

申请日：2007-09-18

Applicant: Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/44

CPC classification number: H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

Abstract translation: 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US20090302002A1

公开(公告)日：2009-12-10

申请号：US12395057

申请日：2009-02-27

Applicant: Kenneth Collins ,  Martin Salinas ,  Walter Merry ,  Jie Yuan ,  Andrew Nguyen ,  Kartik Ramaswamy ,  Jennifer Sun ,  Ren-Guan Duan ,  Xiaoming He ,  Nancy Fung

Inventor： Kenneth Collins ,  Martin Salinas ,  Walter Merry ,  Jie Yuan ,  Andrew Nguyen ,  Kartik Ramaswamy ,  Jennifer Sun ,  Ren-Guan Duan ,  Xiaoming He ,  Nancy Fung

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01J37/321 ,  G03F7/427 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/31138

Abstract: A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.

Abstract translation: 提供了从基板上除去聚合物的方法和装置。 在一个实施方案中，用于从基材中除去聚合物的装置包括具有室壁和限定处理体积的室盖的处理室，设置在处理室中的基板支撑组件和耦合到处理室的远程等离子体源 通过形成在室壁内的出口，出口具有指向设置在基板支撑组件上的基板的周边区域的开口，其中远程等离子体源由耐氢物质的材料制成。