公开(公告)号：US20150031211A1

公开(公告)日：2015-01-29

申请号：US14484152

申请日：2014-09-11

Applicant: Applied Materials, Inc.

Inventor： Kedar Sapre ,  Nitin Ingle ,  Jing Tang

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/76224

Abstract: A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.

Abstract translation: 描述了蚀刻半导体衬底中的凹部的方法。 该方法可以包括在衬底的沟槽中形成介质衬垫层，其中衬层具有第一密度。 该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二电介质层。 第二电介质层可以首先在沉积之后流动，并且具有小于衬垫的第一密度的第二密度。 该方法可以进一步包括将衬底暴露于干燥蚀刻剂，其中蚀刻剂去除第一衬里层和第二介电层的一部分以形成凹部，其中干蚀刻剂包括含氟化合物和分子氢，并且其中 用于去除第一介电衬垫层以去除第二介电层的蚀刻速率比为约1:1.2至约1:1。

公开(公告)号：US11437242B2

公开(公告)日：2022-09-06

申请号：US16201724

申请日：2018-11-27

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Kwang-Soo Kim ,  Thomas Choi ,  Nitin Ingle

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/67

Abstract: Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material.

公开(公告)号：US10854426B2

公开(公告)日：2020-12-01

申请号：US15864718

申请日：2018-01-08

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L21/02 ,  H01L27/02 ,  H01L21/285 ,  H01L21/3213 ,  H01L27/11582

Abstract: Exemplary methods for laterally etching tungsten may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and tungsten slabs arranged within a plurality of recesses defined by at least one of the two vertical columns. At least two of the tungsten slabs may be connected by tungsten lining a portion of sidewalls of the trench. The methods may further include oxidizing the tungsten connecting the at least two of the tungsten slabs with the oxygen-containing precursor. The methods may include flowing a halide precursor into the semiconductor processing chamber. The methods may also include laterally etching the oxidized tungsten from the sidewalls of the trench.

公开(公告)号：US10573527B2

公开(公告)日：2020-02-25

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Robert Jan Visser ,  Nitin Ingle ,  Zihui Li ,  Prerna Sonthalia Goradia

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20190311909A1

公开(公告)日：2019-10-10

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Robert Jan Visser ,  Nitin Ingle ,  Zihui Li ,  Prerna Sonthalia Goradia

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20190214230A1

公开(公告)日：2019-07-11

申请号：US15912404

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Nitin Ingle ,  Feiyue Ma ,  Hanshen Zhang ,  Siliang Chang ,  Daniella Holm

IPC: H01J37/32 ,  H01L27/10 ,  H01L27/02 ,  H01L21/285 ,  H01L21/02

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32788 ,  H01J37/32972 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28518 ,  H01L27/0203 ,  H01L27/10

Abstract: Exemplary methods for etching a variety of metal-containing materials may include flowing an oxygen-containing precursor into a semiconductor processing chamber. A substrate positioned within the semiconductor processing chamber may include a trench formed between two vertical columns and a metal-containing material arranged within a plurality of recesses defined by the two vertical columns. The plurality of recesses may include a first recess and a second recess adjacent to the first recess. The metal-containing material arranged within the first recess and the metal-containing material arranged within the second recess may be connected by the metal-containing material lining a portion of sidewalls of the trench. The methods may further include oxidizing the metal-containing material with the oxygen-containing precursor. The methods may also include flowing a halide precursor into the semiconductor processing chamber. The methods may further include laterally etching the oxidized metal-containing material lining the portion of the sidewalls of the trench.

公开(公告)号：US20190122923A1

公开(公告)日：2019-04-25

申请号：US16229710

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/321 ,  H01L23/532

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US10256112B1

公开(公告)日：2019-04-09

申请号：US15835731

申请日：2017-12-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Xikun Wang ,  Nitin Ingle

IPC: H01L21/321 ,  H01L21/3213 ,  C23C28/04 ,  C23C16/01 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/285

Abstract: Exemplary methods for removing tungsten-containing material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing methane into the processing region of the semiconductor processing chamber. The methods may include forming a plasma from the chlorine-containing precursor and the methane to produce plasma effluents. The methods may also include contacting a substrate with the plasma effluents. The substrate may include an exposed region of a tungsten-containing material. The plasma effluents may produce an oxychloride of tungsten. The methods may also include recessing the exposed region of the tungsten-containing material.

公开(公告)号：US10163696B2

公开(公告)日：2018-12-25

申请号：US15349460

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/4763 ,  H01L21/285 ,  H01L21/768 ,  H01J37/34 ,  C23C14/34 ,  C23C14/14 ,  H01L21/3213 ,  H01L23/532 ,  H01L21/321 ,  H01L21/67

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US20180323075A1

公开(公告)日：2018-11-08

申请号：US16036635

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Jungmin Ko ,  Tom Choi ,  Nitin Ingle ,  Kwang-Soo Kim ,  Theodore Wou

IPC: H01L21/311 ,  H01L21/02

Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon nitride. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon nitride from the semiconductor substrate.