公开(公告)号：US20200371427A1

公开(公告)日：2020-11-26

申请号：US16877924

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/54 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium and antimony.

公开(公告)号：US20200249560A1

公开(公告)日：2020-08-06

申请号：US16777188

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and antimony.

公开(公告)号：US20200249559A1

公开(公告)日：2020-08-06

申请号：US16777171

申请日：2020-01-30

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from carbon and antimony.

公开(公告)号：US11860533B2

公开(公告)日：2024-01-02

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

CPC classification number: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US11630385B2

公开(公告)日：2023-04-18

申请号：US17152068

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.

公开(公告)号：US11300872B2

公开(公告)日：2022-04-12

申请号：US16877967

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from bismuth and iron.

公开(公告)号：US11275304B2

公开(公告)日：2022-03-15

申请号：US16877955

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from boron and nickel.

公开(公告)号：US11275302B2

公开(公告)日：2022-03-15

申请号：US16877732

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium and germanium.

公开(公告)号：US20220011663A1

公开(公告)日：2022-01-13

申请号：US17370406

申请日：2021-07-08

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; and an absorber layer comprising tantalum and iridium or ruthenium and antimony.

公开(公告)号：US11209727B2

公开(公告)日：2021-12-28

申请号：US16662753

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Vibhu Jindal ,  Abbas Rastegar

IPC: G03F1/22 ,  G03F7/20 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer including an alloy of tantalum and copper on the capping layer.