公开(公告)号：US07742258B2

公开(公告)日：2010-06-22

申请号：US11707524

申请日：2007-02-12

Applicant: Tsung Yuan Chen ,  David Patrick Druist ,  Quang Le ,  Kim Y. Lee ,  Chun-Ming Wang ,  Howard Gordon Zolla

Inventor： Tsung Yuan Chen ,  David Patrick Druist ,  Quang Le ,  Kim Y. Lee ,  Chun-Ming Wang ,  Howard Gordon Zolla

IPC: G11B5/127

CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49032

Abstract: A method for fabricating a magnetic head with a trapezoidal shaped pole piece tip is described. The body of the main pole piece is deposited; then one or more layers for the pole piece tip are deposited. A bed material is deposited over the pole piece tip material. A void is formed in the bed material over the area for the pole piece tip. The void is filled with an ion-milling resistant material such as alumina preferably using atomic layer deposition or atomic layer chemical vapor deposition. The excess ion-milling resistant material and the bed material are removed. The result is an ion-milling mask formed over the area for the pole piece tip. Ion milling is then used to remove the unmasked material in the pole piece tip layer and to form a beveled pole piece tip and preferably a beveled face on the main pole piece.

Abstract translation: 描述了制造具有梯形极片尖端的磁头的方法。 主极片的主体被沉积; 然后沉积用于极片尖端的一个或多个层。 床材料沉积在极片末端材料上。 在用于极片尖端的区域上的床材料中形成空隙。 空隙填充有耐离子碾磨材料，例如氧化铝，优选使用原子层沉积或原子层化学气相沉积。 除去过量的抗离子碾磨材料和床料。 结果是在极片尖端的区域上形成离子铣削掩模。 然后使用离子铣削去除极片末端层中的未掩模材料，并且在主极片上形成斜面极片末端，并且优选地形成斜面。

公开(公告)号：US20100149627A1

公开(公告)日：2010-06-17

申请号：US12711594

申请日：2010-02-24

Applicant: Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey B. Sampsell ,  Chun-Ming Wang

Inventor： Teruo Sasagawa ,  Clarence Chui ,  Manish Kothari ,  SuryaPrakash Ganti ,  Jeffrey B. Sampsell ,  Chun-Ming Wang

IPC: G02B26/00 ,  B05D5/12 ,  C23F1/00

CPC classification number: G02B26/0841 ,  B81B2201/042 ,  B81B2203/0307 ,  B81C1/00595 ,  B81C2201/014 ,  G02B26/001

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

Abstract translation: 具有由保护材料包围的牺牲材料形成的支撑结构的微机电系统装置。 微机电系统装置包括其上形成有电极的基板。 另一电极通过空腔与第一电极分离，并形成可移动层，该可移动层由牺牲材料形成的支撑结构支撑。

公开(公告)号：US20090269932A1

公开(公告)日：2009-10-29

申请号：US12149151

申请日：2008-04-28

Applicant: Yung-Tin Chen ,  Chun-Ming Wang ,  Steven J. Radigan ,  Christopher J. Petti ,  Steven Maxwell

Inventor： Yung-Tin Chen ,  Chun-Ming Wang ,  Steven J. Radigan ,  Christopher J. Petti ,  Steven Maxwell

IPC: H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1021

Abstract: A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, selectively removing the spaced apart features, filling a space between a first sidewall spacer and a second sidewall spacer with a filler feature, selectively removing the sidewall spacers to leave a plurality of the filler features spaced apart from each other, and etching the at least one device layer using the filler feature as a mask.

Abstract translation: 制造半导体器件的方法包括在衬底上形成至少一个器件层，在所述至少一个器件层上形成至少两个间隔的特征，在所述至少两个特征上形成侧壁间隔物，选择性地去除间隔开的特征， 用填料特征填充第一侧壁间隔物和第二侧壁间隔物之间​​的空间，选择性地去除侧壁间隔物以留下彼此间隔开的多个填料特征，并使用填料特征来蚀刻至少一个器件层，如 一个面具

公开(公告)号：US20070285761A1

公开(公告)日：2007-12-13

申请号：US11656681

申请日：2007-01-23

Applicant: Fan Zhong ,  Chun-Ming Wang ,  Stephen Zee

Inventor： Fan Zhong ,  Chun-Ming Wang ,  Stephen Zee

IPC: G02B26/00

CPC classification number: G02B26/001

Abstract: MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.

Abstract translation: 通过包括在衬底上形成光学元件（例如标准具）然后在光学元件上形成光调制元件（例如干涉式调制器）的方法制造MEMS器件。 在一个实施例中，用于光调制元件的支撑结构与下面的光学元件对准，从而将支撑结构的外观改变为观看者。 这样的光学元件通过一个或多个缓冲层与支撑结构分离。

公开(公告)号：US20070155051A1

公开(公告)日：2007-07-05

申请号：US11321134

申请日：2005-12-29

Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

IPC: H01L21/00

CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

公开(公告)号：US20070042524A1

公开(公告)日：2007-02-22

申请号：US11506600

申请日：2006-08-18

Applicant: Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

Inventor： Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

IPC: H01L21/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

Abstract translation: MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。

公开(公告)号：US20060000795A1

公开(公告)日：2006-01-05

申请号：US10882883

申请日：2004-06-30

Applicant: Tsung Chen ,  David Druist ,  Quang Le ,  Kim Lee ,  Chun-Ming Wang ,  Howard Zolla

Inventor： Tsung Chen ,  David Druist ,  Quang Le ,  Kim Lee ,  Chun-Ming Wang ,  Howard Zolla

IPC: B44C1/22

CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49032

Abstract: A method for fabricating a magnetic head with a trapezoidal shaped pole piece tip is described. The body of the main pole piece is deposited, then one or more layers for the pole piece tip are deposited. A bed material is deposited over the pole piece tip material. A void is formed in the bed material over the area for the pole piece tip. The void is filled with an ion-milling resistant material such as alumina preferably using atomic layer deposition or atomic layer chemical vapor deposition. The excess ion-milling resistant material and the bed material are removed. The result is an ion-milling mask formed over the area for the pole piece tip. Ion milling is then used to remove the unmasked material in the pole piece tip layer and to form a beveled pole piece tip and preferably a beveled face on the main pole piece.

Abstract translation: 描述了制造具有梯形极片尖端的磁头的方法。 沉积主极片的主体，然后沉积用于极片尖端的一个或多个层。 床材料沉积在极片末端材料上。 在用于极片尖端的区域上的床材料中形成空隙。 空隙填充有耐离子碾磨材料，例如氧化铝，优选使用原子层沉积或原子层化学气相沉积。 除去过量的抗离子碾磨材料和床料。 结果是在极片尖端的区域上形成离子铣削掩模。 然后使用离子铣削去除极片末端层中的未掩模材料，并且在主极片上形成斜面极片末端，并且优选地形成斜面。

公开(公告)号：US20050068672A1

公开(公告)日：2005-03-31

申请号：US10631579

申请日：2003-07-30

Applicant: Kim Lee ,  Chun-Ming Wang

Inventor： Kim Lee ,  Chun-Ming Wang

IPC: G11B5/147 ,  G11B5/31 ,  H01L21/00 ,  H01L21/027 ,  H01L21/302 ,  H01L21/461

CPC classification number: G11B5/3163 ,  H01L21/0272 ,  Y10T29/49021

Abstract: A method is invented for processing a thin-film head/semiconductor wafer. A layer of polymer is applied onto a wafer. A layer of dielectric material is added above the polymer layer. A layer of photoresist is added above the dielectric layer. The photoresist layer is patterned using a photolithography process. Exposed portions of the dielectric layer are removed. Exposed portions of the polymer layer are removed. Exposed portions of the wafer are removed. The polymer layer and any material thereabove is removed after hard bias/leads deposition.

Abstract translation: 发明了一种用于处理薄膜头/半导体晶片的方法。 将一层聚合物施加到晶片上。 在聚合物层之上添加介电材料层。 在介电层上方添加一层光致抗蚀剂。 使用光刻工艺对光致抗蚀剂层进行图案化。 除去介电层的露出部分。 去除聚合物层的暴露部分。 去除晶片的暴露部分。 在硬偏压/引线沉积之后，去除聚合物层和其上的任何材料。

公开(公告)号：US06261727B1

公开(公告)日：2001-07-17

申请号：US09473030

申请日：1999-12-28

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: G03F900

CPC classification number: G03F7/701 ,  G03F7/70308

Abstract: A process and apparatus are described for a projection system having improved depth of focus. This has been achieved by introducing into a standard projection system, of the type suitable for photolithography, both a quadrupole mask in the pupil plane of the illuminator lens and a phase-type filter in the pupil plane of the projection lens. Detailed data for the design of both these filters is provided. If these guidelines are followed the result is a projection system whose depth of focus has been increased to a sufficient degree to allow the formation, in a single exposure, of a photoresist wafer suitable for simultaneously etching both isolated and densely packed contact holes.

Abstract translation: 对于具有改善的焦深的投影系统描述了一种处理和装置。 这已经通过引入适合于光刻的类型的标准投影系统，在照明器透镜的光瞳平面中的四极掩模和投影透镜的光瞳平面中的相位滤光器来实现。 提供了这两个滤波器设计的详细数据。 如果遵循这些指导原则，结果就是一个投影系统，其深度的焦点已经提高到一个足够的程度，允许在一次曝光中形成适合于同时蚀刻隔离和密集接触孔的光刻胶晶片。

公开(公告)号：US08313992B2

公开(公告)日：2012-11-20

申请号：US12897257

申请日：2010-10-04

Applicant: Chen-Che Huang ,  Chun-Ming Wang ,  Masaaki Higashitani

Inventor： Chen-Che Huang ,  Chun-Ming Wang ,  Masaaki Higashitani

IPC: H01L21/336 ,  H01L21/8234 ,  G03F1/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: G03F1/36

Abstract: A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.

Abstract translation: 光刻掩模包括形成在掩模基板上的多个图案化特征以及基本上垂直于掩模基板上的图案化特征形成的第一多个次分辨率辅助特征（SRAF）。