公开(公告)号：US20190317394A1

公开(公告)日：2019-10-17

申请号：US16317204

申请日：2017-06-22

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Yasutaka HORIGOME

IPC: G03F1/58 ,  G03F1/22 ,  G03F7/20 ,  G03F1/78 ,  H01L21/311

Abstract: This mask blank is provided with a light blocking film on a light transmitting substrate. The light blocking film has an optical density of 2.5 or more with respect to ArF excimer laser exposure light, and has a structure that comprises three or more multilayer structures, each of which is composed of a high nitride layer and a low nitride layer. The high nitride layer and the low nitride layer are formed from a material that is composed of silicon and nitrogen or a material that contains one or more elements selected from among semimetal elements and non-metal elements in addition to silicon and nitrogen. The high nitride layer has a nitrogen content of 50 atom % or more, and has a thickness of 10 nm or more. The low nitride layer has a nitrogen content of less than 50 atom %, and has a thickness that is not less than twice the thickness of the high nitride layer.

公开(公告)号：US20170176848A1

公开(公告)日：2017-06-22

申请号：US15454199

申请日：2017-03-09

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC: G03F1/32 ,  H01L21/027 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2006 ,  H01L21/0275

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

公开(公告)号：US20170075210A1

公开(公告)日：2017-03-16

申请号：US15122453

申请日：2015-02-24

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takashi UCHIDA

IPC: G03F1/32 ,  H01L21/308 ,  G03F7/20 ,  G03F7/34 ,  G03F1/80 ,  G03F1/58

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  H01L21/3081 ,  H01L21/3086

Abstract: A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.

Abstract translation: 从透明基板侧按顺序层叠有透明基板上的相移膜，遮光膜和硬掩模膜的结构的掩模坯料。 相移膜由含硅的材料形成，硬掩模膜由含有至少一种选自硅和钽的元素的材料形成，并且遮光膜由含铬的材料形成。 掩模坯料具有层叠以下三层：下层，中间层和上层的结构，在遮光膜中上层具有最高铬含量，中间层具有最低含量 并且含有至少一种选自铟，锡和钼的金属元素。

公开(公告)号：US20160202602A1

公开(公告)日：2016-07-14

申请号：US14892260

申请日：2014-05-19

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Ryo OHKUBO

IPC: G03F1/32

CPC classification number: G03F1/32 ,  C23G5/00 ,  G03F1/80

Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.

Abstract translation: 在具有光半透射膜和遮光膜层叠在透明基板的主表面上的结构的掩模坯料中，光半透射膜由可以用蚀刻干法蚀刻的材料制成 包含氟基气体的气体，所述遮光膜由含有钽和选自铪和锆的一种或多种元素的材料制成，除了其表面层之外不含氧，所述蚀刻阻挡膜设置在 光半透射膜和遮光膜，并且蚀刻停止膜由含有20原子％以下的含铬的材料构成。

公开(公告)号：US20150168823A1

公开(公告)日：2015-06-18

申请号：US14627426

申请日：2015-02-20

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Kazuya SAKAI

IPC: G03F1/32 ,  G03F1/26

CPC classification number: G03F1/32 ,  B82Y30/00 ,  C23C14/0036 ,  C23C14/0641 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2041 ,  Y10S977/755

Abstract: Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

Abstract translation: 提供一种相位移掩模坯料，其将由主要包含过渡金属，硅和氮的材料制成的光半透射膜（相移膜）的照射耐久性提高到具有200nm波长的曝光光 或更小，从而可以改善掩模寿命，制造这种相移掩模坯料的方法和相移掩模。 相移掩模空白用于制造适于施加ArF受激准分子激光曝光光的相移掩模。 相移掩模空白在透明基板上具有轻半透射膜。 轻半透射膜是主要包含过渡金属，硅和氮的不完全氮化物膜。 过渡金属与过渡金属和轻半透射膜中的硅的含量比小于9％。

公开(公告)号：US20240053672A1

公开(公告)日：2024-02-15

申请号：US18270789

申请日：2022-01-18

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A mask blank has a substrate and a pattern-forming thin film formed on the substrate. The pattern-forming thin film is one of a single-layer film containing chromium and nitrogen or a multi-layer film comprising at least one chromium nitride-based layer. An arithmetic mean roughness Sa is 1.0 nm or less and a ratio of a maximum height Sz to the arithmetic mean roughness Sa Sz/Sa is 14 or less in a 1-μm square positioned in a central region on a surface of the pattern-forming thin film with respect to a center of the substrate.

公开(公告)号：US20220206381A1

公开(公告)日：2022-06-30

申请号：US17698151

申请日：2022-03-18

Applicant: HOYA CORPORATION

Inventor： Kazutake TANIGUCHI ,  Hiroaki SHISHIDO

IPC: G03F1/54 ,  G03F1/50

Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n≤0.0733×k2+0.4069×k+1.0083   Formula (1) n≥29.316×k2−92.292×k+72.671   Formula (2)

公开(公告)号：US20220128898A1

公开(公告)日：2022-04-28

申请号：US17428821

申请日：2020-02-06

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA ,  Hiroaki SHISHIDO

IPC: G03F1/32 ,  H01L21/033

Abstract: A mask blank including a phase shift film.
The phase shift film has a function to transmit an exposure light of a KrF excimer laser at a transmittance of 2% or more, and a function to generate a phase difference of 150 degrees or more and 210 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film, in which the phase shift film has a structure where a lower layer and an upper layer are stacked in order from a side of the transparent substrate, in which a refractive index nL of the lower layer at a wavelength of the exposure light and a refractive index nU of the upper layer at a wavelength of the exposure light satisfy a relation of nL>nU, in which an extinction coefficient kL of the lower layer at a wavelength of the exposure light and an extinction coefficient kU of the upper layer at a wavelength of the exposure light satisfy a relation of kL>kU; and in which a thickness dL of the lower layer and a thickness dU of the upper layer satisfy a relation of dL

公开(公告)号：US20210149293A1

公开(公告)日：2021-05-20

申请号：US16622802

申请日：2018-05-16

Applicant: HOYA CORPORATION

Inventor： Masahiro HASHIMOTO ,  Hiroaki SHISHIDO

IPC: G03F1/32 ,  H01L21/033

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

公开(公告)号：US20200285144A1

公开(公告)日：2020-09-10

申请号：US16648933

申请日：2018-09-06

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Hiroaki SHISHIDO

IPC: G03F1/32 ,  G03F7/20

Abstract: In a mask blank in which a thin film formed of a material consisting of silicon and nitrogen is formed on a transparent substrate, when the thin film is analyzed by secondary ion mass spectrometry to obtain in-depth distribution of a secondary ion intensity of silicon in counts per second, a slope of the secondary ion intensity of silicon with respect to depth in a direction toward the transparent substrate is less than one hundred fifty counts per second per nanometer in an internal region of the thin film other than a substrate neighborhood region and a surface region.