公开(公告)号：US20230314929A1

公开(公告)日：2023-10-05

申请号：US18114452

申请日：2023-02-27

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32 ,  G03F1/54

CPC classification number: G03F1/32 ,  G03F1/54

Abstract: A mask blank comprises: a light-transmissive substrate; and a phase shift film formed on the light-transmissive substrate, in which the phase shift film includes a lower layer containing hafnium and oxygen and an upper layer formed on the lower layer and containing silicon, oxygen, and nitrogen, a total content of hafnium and oxygen in the lower layer is 95 atom % or more, and a content of nitrogen in the upper layer is 15 atom % or more.

公开(公告)号：US20220121104A1

公开(公告)日：2022-04-21

申请号：US17298248

申请日：2019-12-10

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32

Abstract: Provided is a mask blank, including a phase shift film.
The phase shift film has a function to transmit an exposure light of an ArF excimer laser at a transmittance of 15% or more and a function to generate a phase difference of 150 degrees or more and 210 degrees or less; the phase shift film is formed of a material containing a non-metallic element and silicon; the phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order; refractive indexes n1, n2, n3 of the first, second, and third layers, respectively, at a wavelength of an exposure light satisfy relations of n1>n2 and n2 k2 and k2

公开(公告)号：US20210026235A1

公开(公告)日：2021-01-28

申请号：US17040937

申请日：2019-03-15

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA ,  Yasutaka HORIGOME

IPC: G03F1/32 ,  G03F1/72 ,  G03F1/84 ,  G03F1/80 ,  H01L21/033

Abstract: A mask blank has a phase shift film of a structure in which a lower layer, an intermediate layer, and an upper layer are layered in this order. The lower layer is formed of a silicon-nitride-based material. The intermediate layer is formed of silicon-oxynitride-based material. The upper layer is formed of a silicon-oxide-based material. The nitrogen content of the lower layer is greater than those of the intermediate and the upper layers. The oxygen content of the upper layer is greater than those of the intermediate and the lower layers. The ratio of the film thickness of the intermediate layer with respect to the overall film thickness of the phase shift film is 0.15 or more, and the ratio of the film thickness of the upper layer with respect to the overall film thickness of the phase shift film is 0.10 or more.

公开(公告)号：US20230393457A1

公开(公告)日：2023-12-07

申请号：US18034656

申请日：2021-12-02

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Hitoshi MAEDA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: Provided is a mask blank. A mask blank comprising a phase shift film on a transparent substrate, the phase shift film having a structure in which a first layer, a second layer, and a third layer are layered in this order on the transparent substrate, the first layer and the third layer including hafnium and oxygen, and the second layer including silicon and oxygen, wherein when thicknesses of the first layer, the second layer, and the third layer are represented by D1, D2, and D3, respectively, all relationships of (Expression 1-A) to (Expression 1-D) are satisfied, or all relationships of (Expression 2-A) to (Expression 2-D) are satisfied.

公开(公告)号：US20220252972A1

公开(公告)日：2022-08-11

申请号：US17628655

申请日：2020-08-26

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32 ,  H01L21/027

Abstract: Provided is a mask blank that can manufacture a phase shift mask.
Provided is a mask blank having a phase shift film on a transparent substrate, the phase shift film contains hafnium, silicon, and oxygen, a ratio of a hafnium content to a total content of hafnium and silicon in the phase shift film by atom % is 0.4 or more, a refractive index n of the phase shift film to a wavelength of an exposure light of an Arf excimer laser is 2.5 or more, and an extinction coefficient k of the phase shift film to a wavelength of the exposure light is 0.30 or less.

公开(公告)号：US20210364909A1

公开(公告)日：2021-11-25

申请号：US16755117

申请日：2018-11-20

Applicant: HOYA CORPORATION

Inventor： Osamu NOZAWA ,  Yasutaka HORIGOME ,  Hitoshi MAEDA

IPC: G03F1/32 ,  H01L21/033

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

公开(公告)号：US20210208497A1

公开(公告)日：2021-07-08

申请号：US17058631

申请日：2019-05-08

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Hiroaki SHISHIDO ,  Masahiro HASHIMOTO

IPC: G03F1/26 ,  H01L21/033

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1

公开(公告)号：US20210132488A1

公开(公告)日：2021-05-06

申请号：US17058591

申请日：2019-05-08

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Hitoshi MAEDA ,  Masahiro HASHIMOTO

IPC: G03F1/32 ,  H01L21/027

Abstract: Provided is a mask blank including a phase shift film The phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order from a side of the transparent substrate. Refractive indexes n1, n2, and n3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relations n1>n2 and n2 k3. Film thicknesses d1, d2, and d3 of the first layer, the second layer, and the third layer, respectively, satisfy the relations d1

公开(公告)号：US20210088895A1

公开(公告)日：2021-03-25

申请号：US16970601

申请日：2019-01-08

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Ryo OHKUBO ,  Yasutaka HORIGOME

IPC: G03F1/32 ,  H01L21/033

Abstract: A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

公开(公告)号：US20240184194A1

公开(公告)日：2024-06-06

申请号：US18278310

申请日：2022-01-21

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Osamu NOZAWA

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: A mask blank comprises a transparent substrate and a phase shift film on the transparent substrate. The phase shift film includes a lower layer and an upper layer formed on the lower layer. The upper layer is in contact with the lower layer. The lower layer includes silicon and oxygen. The upper layer includes hafnium and oxygen. The upper layer has a thickness of 5 nm or more. The phase shift film has a thickness of 90 nm or less.