MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, METHOD OF MANUFACTURING MASK BLANK SUBSTRATE, METHOD OF MANUFACTURING SUBSTRATE WITH REFLECTIVE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    41.
    发明申请
    MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, METHOD OF MANUFACTURING MASK BLANK SUBSTRATE, METHOD OF MANUFACTURING SUBSTRATE WITH REFLECTIVE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    掩模基板,具有多层反射膜的基板,反射掩模布,反射掩模,制造掩模基板的方法,用反射膜制造基板的方法和制造半导体器件的方法

    公开(公告)号:US20150331312A1

    公开(公告)日:2015-11-19

    申请号:US14655190

    申请日:2013-12-27

    CPC classification number: G03F1/60 G03F1/24 G03F1/80 G03F1/84 G03F7/20 G03F7/2004

    Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

    Abstract translation: 本发明的目的是提供一种掩模板基板等,即使使用使用光的高灵敏度缺陷检查装置,由于减少包括伪缺陷在内的检测缺陷的数量,能够可靠地检测临界缺陷 的各种波长。 本发明涉及一种用于光刻的掩模坯料基板,其中通过测量0.14mm×0.1mm的区域得到的空间频率为1×10 -2μm-1 -1μm-1的功率谱密度 用白光干涉仪在640×480像素上形成转印图案的掩模坯料基板的主表面不大于4×106nm 4,空间频率处的功率谱密度不为 通过用原子力显微镜测量主表面上的1μm×1μm的区域获得的小于1μm的不超过10nm 4。

    REFLECTIVE MASK BLANK AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    42.
    发明申请
    REFLECTIVE MASK BLANK AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    反射掩模布及其制造方法,制造反射掩模的方法和制造半导体器件的方法

    公开(公告)号:US20150301441A1

    公开(公告)日:2015-10-22

    申请号:US14418629

    申请日:2013-07-27

    CPC classification number: G03F1/24 G03F1/48

    Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

    Abstract translation: 本发明提供了一种能够防止在掩模制造工艺中或在掩模使用期间由于清洁等而剥离多层反射膜的反射掩模板。 反射掩模坯料包括在基板上依次形成的多层反射膜,保护膜,吸收膜和抗蚀剂膜。 假设从基板的中心到多层反射膜的外周端的距离为L(ML),则从基板的中心到保护膜的外周端的距离为L(Cap), 从基板的中心到吸收膜的外周端的距离为L(Abs),并且从基板的中心到抗蚀剂膜的外周端的距离为L(Res),L (Ab)> L(Res)> L(Cap)≥L(ML),并且抗蚀剂膜的外周端位于衬底的外周端的内侧。

    MASK BLANK GLASS SUBSTRATE, MULTILAYER REFLECTIVE FILM COATED SUBSTRATE, MASK BLANK, MASK, AND METHODS OF MANUFACTURING THE SAME
    43.
    发明申请
    MASK BLANK GLASS SUBSTRATE, MULTILAYER REFLECTIVE FILM COATED SUBSTRATE, MASK BLANK, MASK, AND METHODS OF MANUFACTURING THE SAME 有权
    掩模玻璃基板,多层反射膜涂层基板,掩模板,掩模及其制造方法

    公开(公告)号:US20130078555A1

    公开(公告)日:2013-03-28

    申请号:US13630622

    申请日:2012-09-28

    CPC classification number: G03F1/24 G03F1/38 G03F1/60

    Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.

    Abstract translation: 提供了具有高表面平滑度的掩模坯料玻璃基板,其形成有能够提高缺陷位置等的检测精度的基准标记,并且能够重复利用或再循环包含在其中的玻璃基板。 在掩模坯料用玻璃基板的主表面上形成有转印图案的一侧的底层形成。 底层用于降低玻璃基板的主表面的表面粗糙度或减少玻璃基板的主表面的缺陷。 底层的表面是精密抛光的表面。 在缺陷信息中提供缺陷位置的基准的基准标记形成在底层上。

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