公开(公告)号：US10327330B2

公开(公告)日：2019-06-18

申请号：US15762791

申请日：2015-09-24

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Adel A. Elsherbini ,  Javier Soto Gonzalez ,  Dilan Seneviratne ,  Shruti R. Jaywant ,  Sashi S. Kandanur ,  Srinivas Pietambaram ,  Nadine L. Dabby ,  Braxton Lathrop ,  Rajat Goyal ,  Vivek Raghunathan

IPC: H05K1/02 ,  H01L23/14 ,  H01L23/538 ,  H05K1/03 ,  H05K1/11 ,  H05K1/18 ,  H05K3/00 ,  H05K3/18 ,  H05K3/28 ,  H05K3/34 ,  H05K3/42 ,  H05K3/46 ,  H05K3/20

Abstract: Some forms relate to an example stretchable electronic assembly. The stretchable electronic assembly includes a stretchable body that includes electronic components. A plurality of meandering conductors electrically connect the electronic components. The plurality of meandering conductors may be exposed from the stretchable body. A plurality of conductive pads are electrically connected to at least one of the electronic components or some of the plurality of meandering conductors. The plurality of conductive pads may be exposed from the stretchable body. The stretchable body includes an upper surface and lower surface. The plurality of meandering conductors may be exposed from the lower surface (in addition to, or alternatively to, the upper surface) of the stretchable body.

公开(公告)号：US12272484B2

公开(公告)日：2025-04-08

申请号：US17192187

申请日：2021-03-04

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Pooya Tadayon ,  Kristof Darmawikarta ,  Tarek Ibrahim ,  Prithwish Chatterjee

IPC: H01F27/28 ,  H01F1/04 ,  H01F27/40 ,  H05K1/16

Abstract: An inductor can be formed in a coreless electronic substrate from magnetic materials and/or fabrication processes that do not result in the magnetic materials leaching into plating and/or etching solutions/chemistries, and results in a unique inductor structure. This may be achieved by forming the inductors from magnetic ferrites. The formation of the electronic substrates may also include process sequences that prevent exposure of the magnetic ferrites to the plating and/or etching solutions/chemistries.

公开(公告)号：US20250112163A1

公开(公告)日：2025-04-03

申请号：US18375203

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Pratyush Mishra ,  Pratyasha Mohapatra ,  Srinivas Pietambaram ,  Whitney Bryks ,  Mahdi Mohammadighaleni ,  Joshua Stacey ,  Travis Palmer ,  Yosef Kornbluth ,  Kuang Liu ,  Astitva Tripathi ,  Yuqin Li ,  Rengarajan Shanmugam ,  Xing Sun ,  Brian Balch ,  Darko Grujicic ,  Jieying Kong ,  Nicholas Haehn ,  Jacob Vehonsky ,  Mitchell Page ,  Vincent Obiozo Eze ,  Daniel Wandera ,  Sameer Paital ,  Gang Duan

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/15 ,  H01L25/065

Abstract: An IC die package includes a substrate comprising glass and a plurality of holes extending through the glass. A via metallization is present within the holes. A liner is between the via metallization and the glass. The liner can comprise a beta-titanium alloy layer, polymer hydrogel layer and an MXene seed layer, an organic material layer and a metal layer, or an organic material layer between first and second metal layers. A polymer layer may be formed by electrodeposition of charged nanoparticles.

公开(公告)号：US12191240B2

公开(公告)日：2025-01-07

申请号：US16539254

申请日：2019-08-13

Applicant: Intel Corporation

Inventor： Jieying Kong ,  Srinivas Pietambaram ,  Gang Duan

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/64

Abstract: Embodiments disclosed herein include hybrid cores for electronic packaging applications. In an embodiment, a package substrate comprises a plurality of glass layers and a plurality of dielectric layers. In an embodiment, the glass layers alternate with the dielectric layers. In an embodiment, a through-hole through the plurality of glass layers and the plurality of dielectric layers is provided. In an embodiment a conductive through-hole via is disposed in the through-hole.

公开(公告)号：US20250006646A1

公开(公告)日：2025-01-02

申请号：US18216525

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Xing Sun ,  Srinivas Pietambaram ,  Darko Grujicic ,  Rengarajan Shanmugam ,  Brian Balch ,  Micah Armstrong ,  Qiang Li ,  Marcel Wall ,  Rahul Manepalli

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/15 ,  H01L25/065

Abstract: Integrated circuit (IC) die packages including a glass with conductive through-glass vias (TGVs). The TGVs are lined with a buffer comprising an inorganic material having a low elastic (Young's) modulus. The buffer may thereby accommodate internal stress between the glass and through via metallization formed over the buffer. The compliant inorganic material may be a metal or metal alloy, for example, different than that of the via metallization. The inorganic material may also be a metal nitride, metal silicide, or metal carbide. A TGV buffer may be one material layer of a stack comprising two or more material layers deposited upon TGV sidewall surfaces. A routing structure may be built-up on at least one side of the glass and IC die assembled to the routing structure. The buffer Ipresent within the TGVs may be absent from metal features of the routing structure.

公开(公告)号：US20240222345A1

公开(公告)日：2024-07-04

申请号：US18090707

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Pietambaram ,  Gang Duan ,  Kyle Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/15 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/56 ,  H01L23/15 ,  H01L23/3121 ,  H01L23/5383 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/05647 ,  H01L2224/08225 ,  H01L2224/80447 ,  H01L2224/80895

Abstract: An apparatus is provided which comprises: a plurality of interconnect layers within a substrate, a layer of organic dielectric material over the plurality of interconnect layers, copper pads within the layer of organic dielectric material, a first integrated circuit device copper-to-copper bonded with the copper pads, inorganic dielectric material over the layer of organic dielectric material, the inorganic dielectric material embedding the first integrated circuit device, and the inorganic dielectric material extending across a width of the substrate, and a second integrated circuit device coupled with a substrate surface above the inorganic dielectric material. Other embodiments are also disclosed and claimed.

公开(公告)号：US20240222301A1

公开(公告)日：2024-07-04

申请号：US18147497

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Hongxia Feng ,  Haobo Chen ,  Srinivas Pietambaram ,  Bai Nie ,  Gang Duan ,  Kyle Arrington ,  Ziyin Lin ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Sairam Agraharam ,  Ashay Dani ,  Eric J. M. Moret ,  Tarek Ibrahim

IPC: H01L23/00

CPC classification number: H01L24/11 ,  H01L2224/10122 ,  H01L2224/11011 ,  H01L2924/143 ,  H01L2924/186

Abstract: Methods and apparatus for optical thermal treatment in semiconductor packages are disclosed. A disclosed example integrated circuit (IC) package includes a dielectric substrate, an interconnect associated with the dielectric substrate, and light absorption material proximate or surrounding the interconnect, the light absorption material to increase in temperature in response to being exposed to a pulsed light for thermal treatment corresponding to the IC package.

公开(公告)号：US20240222283A1

公开(公告)日：2024-07-04

申请号：US18147487

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Hongxia Feng ,  Bohan Shan ,  Bai Nie ,  Xiaoxuan Sun ,  Holly Sawyer ,  Tarek Ibrahim ,  Adwait Telang ,  Dingying Xu ,  Leonel Arana ,  Xiaoying Guo ,  Ashay Dani ,  Sairam Agraharam ,  Haobo Chen ,  Srinivas Pietambaram ,  Gang Duan

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/5386 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2924/15311

Abstract: Methods and apparatus to prevent over-etch in semiconductor packages are disclosed. A disclosed example semiconductor package includes at least one dielectric layer, an interconnect extending at least partially through or from the at least one dielectric layer, and a material on at least a portion of the interconnect, wherein the material comprises at least one of silicon or titanium.

公开(公告)号：US20240222282A1

公开(公告)日：2024-07-04

申请号：US18091150

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Sameer Paital ,  Gang Duan ,  Srinivas Pietambaram ,  Kristof Darmawikarta

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/15 ,  H01L23/498

CPC classification number: H01L23/5386 ,  H01L21/486 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49866 ,  H01L23/5384 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0655

Abstract: Apparatuses, systems, assemblies, and techniques related to forming a metallization structure in a glass core package substrate such that the metallization structure has multiple portions with differing cross-sectional widths with little or no misalignment between the portions are described. Such techniques including mounting the glass core substrate to a stage, applying multiple laser exposures to a location of the glass core substrate to define laser treated regions of the glass core substrate corresponding to the portions of the metallization structure, removing the laser treated regions, and filling the openings with metal to form the embedded zero misaligned metallization structure.

公开(公告)号：US20240222259A1

公开(公告)日：2024-07-04

申请号：US18147535

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Haobo Chen ,  Bohan Shan ,  Xiyu Hu ,  Rhonda Jack ,  Catherine Mau ,  Hongxia Feng ,  Xiao Liu ,  Wei Wei ,  Srinivas Pietambaram ,  Gang Duan ,  Xiaoying Guo ,  Dingying Xu ,  Kyle Arrington ,  Ziyin Lin ,  Hiroki Tanaka ,  Leonel Arana

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L23/49894 ,  H01L21/481 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/16

Abstract: Methods, systems, apparatus, and articles of manufacture to produce integrated circuit (IC) packages having silicon nitride adhesion promoters are disclosed. An example IC package disclosed herein includes a metal layer on a substrate, a layer on the metal layer, the layer including silicon and nitrogen, and solder resist on the layer.