公开(公告)号：US11545441B2

公开(公告)日：2023-01-03

申请号：US17102726

申请日：2020-11-24

Applicant: Intel Corporation

Inventor： Vipul Vijay Mehta ,  Eric Jin Li ,  Sanka Ganesan ,  Debendra Mallik ,  Robert Leon Sankman

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L25/065 ,  H01L23/48 ,  H01L23/498 ,  H01L23/14 ,  H01L21/768

Abstract: Semiconductor packages and package assemblies having active dies and external die mounts on a silicon wafer, and methods of fabricating such semiconductor packages and package assemblies, are described. In an example, a semiconductor package assembly includes a semiconductor package having an active die attached to a silicon wafer by a first solder bump. A second solder bump is on the silicon wafer laterally outward from the active die to provide a mount for an external die. An epoxy layer may surround the active die and cover the silicon wafer. A hole may extend through the epoxy layer above the second solder bump to expose the second solder bump through the hole. Accordingly, an external memory die can be connected directly to the second solder bump on the silicon wafer through the hole.

公开(公告)号：US20210305120A1

公开(公告)日：2021-09-30

申请号：US16831078

申请日：2020-03-26

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Je-Young Chang ,  Ram Viswanath ,  Elah Bozorg-Grayeli ,  Ahmad Al Mohammad

IPC: H01L23/367 ,  H01L23/495 ,  H01L23/373

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

公开(公告)号：US20200006866A1

公开(公告)日：2020-01-02

申请号：US16021474

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Sri Chaitra Jyotsna Chavali ,  Sanka Ganesan ,  William J. Lambert ,  Debendra Mallik ,  Zhichao Zhang

IPC: H01Q25/00 ,  H01Q9/04 ,  H01Q1/38

Abstract: A method of forming a planar antenna on a first substrate. An antenna feedline is formed on a peelable copper film of a carrier. A dielectric with no internal conductive layer is formed on the feedline. A planar antenna is formed on one of two parallel sides of the dielectric and a feed port is formed adjacent the other parallel side. The feedline connects the antenna with the feed port. One plane of the planar antenna is configured for perpendicular attachment to a second substrate. The feedline is connected to the planar antenna by a via through the dielectric. The peelable copper is removed and the structure is etched to produce the planar antenna on the substrate. Two planar antennas on substrates can be perpendicularly attached to another substrate to form side-firing antennas.

公开(公告)号：US20190304911A1

公开(公告)日：2019-10-03

申请号：US15937411

申请日：2018-03-27

Applicant: Intel Corporation

Inventor： Andrew Collins ,  Debendra Mallik ,  Mathew J. Manusharow ,  Jianyong Xie

IPC: H01L23/538 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L21/48

Abstract: An embedded multi-die interconnect bridge (EMIB) die is configured with power delivery to the center of the EMIB die and the power is distributed to two dice that are interconnected across the EMIB die.

公开(公告)号：US20170287831A1

公开(公告)日：2017-10-05

申请号：US15620555

申请日：2017-06-12

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/522 ,  H01L25/00 ,  H01L23/538

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20170170105A1

公开(公告)日：2017-06-15

申请号：US14969940

申请日：2015-12-15

Applicant: Intel Corporation

Inventor： Jimin Yao ,  Sanka Ganesan ,  Shawna M. Liff ,  Yikang Deng ,  Debendra Mallik

IPC: H01L23/498 ,  H05K3/34 ,  H05K1/18 ,  H05K1/03 ,  H01L23/31 ,  H01L21/48

CPC classification number: H01L23/49816 ,  H01L21/4853 ,  H01L23/3114 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/14135 ,  H01L2224/16237 ,  H01L2224/16503 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8101 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81447 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/15321 ,  H01L2924/3511 ,  H05K1/03 ,  H05K1/18 ,  H05K1/181 ,  H05K3/34 ,  H05K3/3436 ,  H05K2201/10515 ,  H05K2201/1053 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028

Abstract: Integrated circuit (IC) package structures, and related devices and methods, are disclosed herein. In some embodiments, an IC package substrate may include: a dielectric layer having a first face and a second face; a metal layer disposed at the first face of the dielectric layer and having a first face and a second face, wherein the second face of the metal layer is disposed between the first face of the metal layer and the second face of the dielectric layer; a package contact at the first face of the metal layer to couple the IC package substrate to a component; and a die contact at the first face of the metal layer to couple a die to the IC package substrate.

公开(公告)号：US20150340353A1

公开(公告)日：2015-11-26

申请号：US14818902

申请日：2015-08-05

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L25/00 ,  H01L25/065

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract translation: 本文通常描述用于局部高密度衬底布线的系统和方法的实施例。 在一个或多个实施例中，一种装置包括介质，第一和第二电路元件，互连元件和电介质层。 该介质可以包括其中的低密度路由。 互连元件可以嵌入在介质中，并且可以在其中包括多个导电构件，导电构件可以电耦合到第一电路元件和第二电路元件。 互连元件可以包括其中的高密度路由。 电介质层可以在互连裸片上方，电介质层包括通过其中的第一和第二电路元件。

公开(公告)号：US12283535B2

公开(公告)日：2025-04-22

申请号：US18395351

申请日：2023-12-22

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Je-Young Chang ,  Ram Viswanath ,  Elah Bozorg-Grayeli ,  Ahmad Al Mohammad

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/495

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

公开(公告)号：US12272656B2

公开(公告)日：2025-04-08

申请号：US18380022

申请日：2023-10-13

Applicant: Intel Corporation

Inventor： Debendra Mallik ,  Ravindranath Mahajan ,  Robert Sankman ,  Shawna Liff ,  Srinivas Pietambaram ,  Bharat Penmecha

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538

Abstract: Embodiments disclosed herein include electronic packages and methods of fabricating electronic packages. In an embodiment, an electronic package comprises an interposer, where a cavity passes through the interposer, and a nested component in the cavity. In an embodiment, the electronic package further comprises a die coupled to the interposer by a first interconnect and coupled to the nested component by a second interconnect. In an embodiment, the first and second interconnects comprise a first bump, a bump pad over the first bump, and a second bump over the bump pad.

公开(公告)号：US12272650B2

公开(公告)日：2025-04-08

申请号：US16804835

申请日：2020-02-28

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Debendra Mallik ,  Nitin A. Deshpande ,  Amruthavalli Pallavi Alur

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/13 ,  H01L23/498 ,  H01L23/522

Abstract: Embodiments may relate to a microelectronic package that includes a substrate with a cavity therein. A component may be positioned within the substrate, and exposed by the cavity. A solder bump may be positioned within the cavity and coupled with the component, and a bridge die may be coupled with the solder bump. Other embodiments may be described or claimed.