公开(公告)号：US09269701B2

公开(公告)日：2016-02-23

申请号：US14818902

申请日：2015-08-05

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L21/44 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US11973041B2

公开(公告)日：2024-04-30

申请号：US17556667

申请日：2021-12-20

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Gang Duan ,  Deepak Kulkarni ,  Rahul Manepalli ,  Xiaoying Guo

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L23/562 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3121 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/214 ,  H01L2924/3511

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a mold layer having a first surface and a second surface opposite the first surface, and a plurality of first dies embedded in the mold layer. In an embodiment, each of the plurality of first dies has a surface that is substantially coplanar with the first surface of the mold layer. In an embodiment, the electronic package further comprises a second die embedded in the mold layer. In an embodiment, the second die is positioned between the plurality of first dies and the second surface of the mold layer.

公开(公告)号：US11515248B2

公开(公告)日：2022-11-29

申请号：US17009308

申请日：2020-09-01

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L25/18 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20220238506A1

公开(公告)日：2022-07-28

申请号：US17716940

申请日：2022-04-08

Applicant: Intel Corporation

Inventor： Srinivas Pietambaram ,  Gang Duan ,  Deepak Kulkarni

IPC: H01L25/00 ,  H01L23/48 ,  H01L23/538 ,  H01L23/29 ,  H01L21/683 ,  H01L23/31

Abstract: Techniques are provided for fine node heterogeneous-chip packages. In an example, a method of making a heterogeneous-chip package can include coupling electrical terminals of a first side of a first base die to electrical terminals of a first side of a second base die using a silicon bridge, forming an organic substrate about the silicon bridge and adjacent the first sides of the first and second base dies, and coupling a fine node die to a second side of at least one of the first base die or the second base die.

公开(公告)号：US09679843B2

公开(公告)日：2017-06-13

申请号：US15049500

申请日：2016-02-22

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/48 ,  H01L23/522 ,  H01L25/00 ,  H01L23/538 ,  H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L25/18

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20160197037A1

公开(公告)日：2016-07-07

申请号：US15049500

申请日：2016-02-22

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/522 ,  H01L25/065 ,  H01L23/00

CPC classification number: H01L23/5226 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/00014 ,  H01L2924/206 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US09153552B2

公开(公告)日：2015-10-06

申请号：US14570785

申请日：2014-12-15

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L21/44 ,  H01L21/48 ,  H01L23/00 ,  H01L23/367 ,  H01L23/433 ,  H01L23/498 ,  H01L23/538 ,  H01L23/36 ,  H01L21/56 ,  H01L23/34

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

Abstract translation: 一个实例包括包括具有下模表面的微电子管芯，平行于下模表面的上模表面和管芯侧的管芯封装，该微电子管芯包括有源区和非活性区。 该实施例可选地包括具有较低散热器表面的散热器，平行于下部散热器表面的上部散热器表面和至少一个散热器侧，散热器布置在热电连接的微电子管芯的上表面上 具有裸片的非活性区域并与活性区电绝缘。 该实施例可选地包括封装模具侧和散热器侧和下部散热器表面的封装材料，该封装材料包括基本上平行于模具下表面的下表面和基本上平行于模具上表面的上表面。

公开(公告)号：US10366951B2

公开(公告)日：2019-07-30

申请号：US15620555

申请日：2017-06-12

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L21/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/56 ,  H01L23/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US20180350737A1

公开(公告)日：2018-12-06

申请号：US16002740

申请日：2018-06-07

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravindranath V. Mahajan

IPC: H01L23/522 ,  H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L25/18 ,  H01L21/56

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US12107042B2

公开(公告)日：2024-10-01

申请号：US17972340

申请日：2022-10-24

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/522 ,  H01L23/538 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L25/18

CPC classification number: H01L23/5226 ,  H01L23/5385 ,  H01L24/06 ,  H01L24/14 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/563 ,  H01L24/05 ,  H01L24/13 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/83102 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2224/05541 ,  H01L2924/206 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.