MEMS accelerometer with proof masses moving in an anti-phase direction

    公开(公告)号:US10371715B2

    公开(公告)日:2019-08-06

    申请号:US14642529

    申请日:2015-03-09

    Abstract: A sensor is disclosed. The sensor includes a substrate and a mechanical structure. The mechanical structure includes at least two proof masses including a first proof mass and a second proof mass. The mechanical structure also includes a flexible coupling between the at least two proof masses and the substrate. The at least two proof masses move in an anti-phase direction normal to the plane of the substrate in response to acceleration of the sensor normal to the plane and move in anti-phase in a direction parallel to the plane of the substrate in response to an acceleration of the sensor parallel to the plane. The at least two proof masses move in a direction parallel to the plane of the substrate in response to an acceleration of the sensor parallel to the plane.

    SENSOR SELF-CALIBRATION
    44.
    发明申请

    公开(公告)号:US20190187172A1

    公开(公告)日:2019-06-20

    申请号:US16206882

    申请日:2018-11-30

    CPC classification number: G01P21/00 G01P15/125

    Abstract: Facilitating self-calibration of a sensor device via modification of a sensitivity of the sensor device is presented herein. A sensor system can comprise a sensor component comprising a sensor that generates an output signal based on an external excitation of the sensor; a sensitivity modification component that modifies a sensitivity of the sensor by a defined amount; and a calibration component that measures a first output value of the output signal before a modification of the sensitivity by the defined amount, measures a second output value of the output signal after the modification of the sensitivity by the defined amount, and determines, based on a difference between the first output value and the second output value, an offset portion of the output signal. Further, the calibration component can modify, based on the offset portion, the output signal.

    Microelectromechanical system device with internal direct electric coupling
    46.
    发明授权
    Microelectromechanical system device with internal direct electric coupling 有权
    具有内部直接电耦合的微机电系统装置

    公开(公告)号:US09452920B2

    公开(公告)日:2016-09-27

    申请号:US14979194

    申请日:2015-12-22

    Abstract: A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises providing a MEMS substrate which includes forming one or more cavities in a first semiconductor layer; forming a second semiconductor layer; and providing a dielectric layer between the first semiconductor layer and the second semiconductor layer The MEMS substrate providing step further includes bonding the first semiconductor layer to a second semiconductor layer; etching at least one via through the second semiconductor layer and the dielectric layer; and depositing a first conductive material onto the second semiconductor layer surface and filling the at least one via. The MEMS substrate providing step also includes depositing a second conductive material on top of the first conductive material; etching the second conductive material and the first conductive material to form at least one stand-off; the second semiconductor layer to define one or more MEMS structures; and the first semiconductor layer to create an opening to separate the first semiconductor layer into a first portion and a second portion. The method further comprises bonding the MEMS substrate to a base substrate using a eutectic bond between the second conductive material and metal pads of the base substrate.

    Abstract translation: 公开了一种在集成MEMS器件中制造电连接的方法。 该方法包括提供MEMS衬底,其包括在第一半导体层中形成一个或多个空腔; 形成第二半导体层; 以及在所述第一半导体层和所述第二半导体层之间提供介电层。所述MEMS衬底提供步骤还包括将所述第一半导体层接合到第二半导体层; 通过所述第二半导体层和所述电介质层蚀刻至少一个通孔; 以及将第一导电材料沉积到所述第二半导体层表面上并填充所述至少一个通孔。 MEMS衬底提供步骤还包括在第一导电材料的顶部上沉积第二导电材料; 蚀刻第二导电材料和第一导电材料以形成至少一个支座; 所述第二半导体层限定一个或多个MEMS结构; 以及第一半导体层,以形成用于将第一半导体层分离成第一部分和第二部分的开口。 该方法还包括使用第二导电材料和基底衬底的金属焊盘之间的共晶键将MEMS衬底接合到基底衬底。

    INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES
    47.
    发明申请
    INTERNAL ELECTRICAL CONTACT FOR ENCLOSED MEMS DEVICES 有权
    用于封装的MEMS器件的内部电气接点

    公开(公告)号:US20160107881A1

    公开(公告)日:2016-04-21

    申请号:US14979194

    申请日:2015-12-22

    Abstract: A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises providing a MEMS substrate which includes forming one or more cavities in a first semiconductor layer; forming a second semiconductor layer; and providing a dielectric layer between the first semiconductor layer and the second semiconductor layer The MEMS substrate providing step further includes bonding the first semiconductor layer to a second semiconductor layer; etching at least one via through the second semiconductor layer and the dielectric layer; and depositing a first conductive material onto the second semiconductor layer surface and filling the at least one via. The MEMS substrate providing step also includes depositing a second conductive material on top of the first conductive material; etching the second conductive material and the first conductive material to form at least one stand-off; the second semiconductor layer to define one or more MEMS structures; and the first semiconductor layer to create an opening to separate the first semiconductor layer into a first portion and a second portion. The method further comprises bonding the MEMS substrate to a base substrate using a eutectic bond between the second conductive material and metal pads of the base substrate.

    Abstract translation: 公开了一种在集成MEMS器件中制造电连接的方法。 该方法包括提供MEMS衬底,其包括在第一半导体层中形成一个或多个空腔; 形成第二半导体层; 以及在所述第一半导体层和所述第二半导体层之间提供介电层。所述MEMS衬底提供步骤还包括将所述第一半导体层接合到第二半导体层; 通过所述第二半导体层和所述电介质层蚀刻至少一个通孔; 以及将第一导电材料沉积到所述第二半导体层表面上并填充所述至少一个通孔。 MEMS衬底提供步骤还包括在第一导电材料的顶部上沉积第二导电材料; 蚀刻第二导电材料和第一导电材料以形成至少一个支座; 所述第二半导体层限定一个或多个MEMS结构; 以及第一半导体层,以形成用于将第一半导体层分离成第一部分和第二部分的开口。 该方法还包括使用第二导电材料和基底衬底的金属焊盘之间的共晶键将MEMS衬底接合到基底衬底。

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