公开(公告)号：US12132117B2

公开(公告)日：2024-10-29

申请号：US17561996

申请日：2021-12-27

Applicant: Japan Display Inc.

Inventor： Takuo Kaitoh ,  Akihiro Hanada ,  Takashi Okada

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78618

Abstract: According to one embodiment, a semiconductor device includes a first insulating film formed of silicon nitride, a second insulating film disposed above the first insulating film and formed of silicon oxide, including a first region and a peripheral region surrounding the first region and thinner than the first region, an oxide semiconductor disposed on the second insulating film and intersecting the first region, a source electrode overlapping the peripheral region and a drain electrode overlapping the peripheral region. The first region is located between the source electrode and the drain electrode and separated from the source electrode and the drain electrode.

公开(公告)号：US12085823B2

公开(公告)日：2024-09-10

申请号：US17987887

申请日：2022-11-16

Applicant: Japan Display Inc.

Inventor： Toshihide Jinnai ,  Hajime Watakabe ,  Akihiro Hanada ,  Ryo Onodera ,  Isao Suzumura

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

CPC classification number: G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78672 ,  H10K59/131 ,  G02F2201/123

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

公开(公告)号：US11894387B2

公开(公告)日：2024-02-06

申请号：US17747049

申请日：2022-05-18

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Toshihide Jinnai ,  Ryo Onodera ,  Akihiro Hanada

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/7869

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20220223707A1

公开(公告)日：2022-07-14

申请号：US17657168

申请日：2022-03-30

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Hajime Watakabe

IPC: H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368

Abstract: The purpose of the present invention is to suppress a change in characteristics of a TFT using an oxide semiconductor film caused by that oxygen in the oxide semiconductor film is extracted by metal electrode. The main structure of the present invention is as follows. A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film; the oxide semiconductor film including a channel region, a drain region, and a source region; in which a metal nitride film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view; and the metal nitride film is not formed at a part of the top surface of the gate electrode.

公开(公告)号：US11271020B2

公开(公告)日：2022-03-08

申请号：US16906569

申请日：2020-06-19

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Masayoshi Fuchi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.

公开(公告)号：US11177388B2

公开(公告)日：2021-11-16

申请号：US16785662

申请日：2020-02-10

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ito ,  Toshihide Jinnai ,  Isao Suzumura ,  Akihiro Hanada ,  Ryo Onodera

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L21/426 ,  H01L21/4757 ,  H01L21/4763 ,  H01L29/66 ,  G02F1/1368

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

公开(公告)号：US11133337B2

公开(公告)日：2021-09-28

申请号：US16852925

申请日：2020-04-20

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Isao Suzumura ,  Akihiro Hanada ,  Yohei Yamaguchi

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US10580801B2

公开(公告)日：2020-03-03

申请号：US15978464

申请日：2018-05-14

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Yohei Yamaguchi ,  Marina Shiokawa ,  Ryotaro Kimura

IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1337 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  H01L27/32

Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.

公开(公告)号：US09947795B2

公开(公告)日：2018-04-17

申请号：US15388720

申请日：2016-12-22

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Tomoyuki Ariyoshi ,  Akihiro Hanada

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L29/78606 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

Abstract: According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a second insulating film provided on the oxide semiconductor layer, and at least one of the first insulating film and the second insulating film includes a first region in contact with the oxide semiconductor layer and a second region further distant from the oxide semiconductor layer than the first region, and the second region has an argon concentration higher than that of the first region.

公开(公告)号：US09780227B2

公开(公告)日：2017-10-03

申请号：US14944676

申请日：2015-11-18

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Masayoshi Fuchi ,  Hajime Watakabe ,  Takashi Okada ,  Arichika Ishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L21/467

CPC classification number: H01L29/7869 ,  H01L21/467 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor and a method of manufacturing the thin-film transistor provided herein achieve enhanced reliability by preventing a disconnection in a gate insulating film at a position corresponding to an end surface of an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. The channel region is placed between the source region and the drain region. The gate insulating film covers the oxide semiconductor layer in a range from at least a part of an upper surface to an end surface continuous with the upper surface of the oxide semiconductor layer. The oxide semiconductor layer is formed so as to have an oxygen concentration that becomes lower from a top side to a bottom side and the end surface is inclined so as to diverge from the top side to the bottom side.