公开(公告)号：US11073768B2

公开(公告)日：2021-07-27

申请号：US16598146

申请日：2019-10-10

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Amnon Manassen ,  Gilad Laredo ,  Yoel Feler ,  Mark Ghinovker ,  Vladimir Levinski

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/95

Abstract: A metrology system may include a controller coupled to a scanning metrology tool that images a sample in motion along a scan direction. The controller may receive an image of a metrology target on the sample from the scanning metrology tool, where the metrology target comprises a first measurement group including cells distributed along a transverse direction orthogonal to the scan direction, and a second measurement group separated from the first measurement group along the scan direction including cells distributed along the transverse direction. The controller may further generate at least a first metrology measurement based on at least one of the cells in the first measurement group, and generate at least a second metrology measurement based on at least one of the cells in the second measurement group.

公开(公告)号：US12253805B2

公开(公告)日：2025-03-18

申请号：US17885909

申请日：2022-08-11

Applicant: KLA Corporation

Inventor： Vladimir Levinski ,  Daria Negri ,  Amnon Manassen

IPC: G03F7/00 ,  G01N21/95

Abstract: An overlay metrology target may include grating-over-grating structures formed from a lower grating structure with a first coarse pitch in a first sample layer and an upper grating structure with a second coarse pitch in a second sample layer, where the upper and lower grating structures overlap on the sample. At least one of the upper grating structure or the lower grating structure may include features with a fine pitch smaller than a wavelength of an illumination beam and arranged to rotate first-order diffraction of the illumination beam associated with at least one of the first or second coarse pitches with respect to at least one of specular reflection from a top surface of the sample or zero-order diffraction from the one or more grating structures. Overlay between the first and second layers of the sample is determinable from an image of the grating structures based on the first-order diffraction.

公开(公告)号：US20250021019A1

公开(公告)日：2025-01-16

申请号：US18902197

申请日：2024-09-30

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/00 ,  G03F9/00 ,  G06T7/33

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US20240329543A1

公开(公告)日：2024-10-03

申请号：US18742869

申请日：2024-06-13

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Vladimir Levinski ,  Daria Negri ,  Amnon Manassen ,  Yonatan Vaknin

IPC: G03F7/00 ,  G01B11/27

CPC classification number: G03F7/70633 ,  G01B11/272 ,  G03F7/70683 ,  G03F7/706849 ,  G03F7/706851

Abstract: An overlay metrology system may include illumination sources configured to generate one or more pairs of mutually coherent illumination beams and illumination optics to direct the pairs of illumination beams to an overlay target at common altitude incidence angles and symmetrically opposed azimuthal incidence angles, where the overlay target includes two or more grating structures distributed along one or more measurement directions. The system may further include imaging optics to image the overlay target onto detectors when implementing the metrology recipe, where an image of a particular one of the two or more grating structures includes a sinusoidal interference pattern generated exclusively with a single non-zero diffraction order of light from each of the illumination beams within the particular one of the pairs of illumination beams. The system may further include a controller to determine overlay measurements based on images of the overlay target.

公开(公告)号：US12001148B2

公开(公告)日：2024-06-04

申请号：US18114451

申请日：2023-02-27

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew V. Hill ,  Yonatan Vaknin ,  Yossi Simon ,  Daria Negri ,  Vladimir Levinski ,  Yuri Paskover ,  Anna Golotsvan ,  Nachshon Rothman ,  Nireekshan K. Reddy ,  Nir BenDavid ,  Avi Abramov ,  Dror Yaacov ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F7/00 ,  G02B27/28 ,  H04N23/56

CPC classification number: G03F7/70633 ,  G02B27/283 ,  G03F7/70641 ,  H04N23/56

Abstract: A method includes generating a sequence of images of a semiconductor wafer from first and second detectors. The first detector images the wafer with first imaging parameters and the second detector images the wafer with second imaging parameters. The first or second imaging parameters are varied across the sequence of images to provide variation at sites across the wafer. The method includes providing a metric indicative of center-of-symmetry variations of first and second target features as a function of the varied imaging parameters based on the sequence of images. The method includes identifying a landscape of values of the varied image parameters for which the metric are below a predefined limit. The method includes generating a recipe for metrology measurements in which the varied imaging parameters are set to values within the landscape. The method includes generating metrology measurements from a production wafer based on the recipe.

公开(公告)号：US20230384237A1

公开(公告)日：2023-11-30

申请号：US17955385

申请日：2022-09-28

Applicant: KLA Corporation

Inventor： Nireekshan K. Reddy ,  Vladimir Levinski ,  Amnon Manassen

IPC: G01N21/95 ,  G03F7/20

CPC classification number: G01N21/9501 ,  G03F7/70633 ,  G03F7/705

Abstract: A metrology system may arrange metrology measurements for a plurality of metrology targets distributed in a plurality of fields on one or samples into a signal vector, where the metrology measurements associated with the metrology targets in each of the plurality of fields are grouped within the signal vector. The system may further decompose the signal vector into reconstruction vectors associated with different spectral components of the signal vector. The system may further classify a subset of the reconstruction vectors as components of a metrology model, where a sum of the components corresponds to a metrology model describing the metrology measurements on the one or more samples. The system may further generate control signals to control one or more processing tools based on the metrology model.

公开(公告)号：US20230314344A1

公开(公告)日：2023-10-05

申请号：US17709200

申请日：2022-03-30

Applicant: KLA Corporation

Inventor： Yuri Paskover ,  Itay Gdor ,  Yuval Lubashevsky ,  Vladimir Levinski ,  Alexander Volfman ,  Yoram Uziel ,  Yevgeniy Men

IPC: G01N21/956 ,  G01N21/88 ,  G01N21/47 ,  G01B11/27

CPC classification number: G01N21/956 ,  G01N21/8806 ,  G01N21/4788 ,  G01B11/272 ,  G01B2210/56

Abstract: A system includes an illumination source configured to generate an illumination beam, and a collection sub-system that includes an objective lens, one or more detectors located at a collection pupil plane, a light modulator, and a controller. The light modulator is configured to direct one or more selected portions of measurement light to the one or more detectors. The controller includes one or more processors configured to execute program instructions causing the one or more processors to execute a metrology recipe by: receiving detection signals from the one or more detectors, wherein the detection signals are associated with the one or more selected portions of the measurement light directed to the one or more detectors; and generating an overlay measurement associated with at least two layers of a sample based on the detection signals.

公开(公告)号：US20220317577A1

公开(公告)日：2022-10-06

申请号：US17219869

申请日：2021-03-31

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew Hill ,  Yonatan Vaknin ,  Yossi Simon ,  Daria Negri ,  Vladimir Levinski ,  Yuri Paskover ,  Anna Golotsvan ,  Nachshon Rothman ,  Nireekshan K. Reddy ,  Nir BenDavid ,  Avi Abramov ,  Dror Yaacov ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F7/20 ,  H04N5/225 ,  G02B27/28

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

公开(公告)号：US20220187062A1

公开(公告)日：2022-06-16

申请号：US17119536

申请日：2020-12-11

Applicant: KLA Corporation

Inventor： Yuri Paskover ,  Itay Gdor ,  Yuval Lubashevksy ,  Vladimir Levinski ,  Alexander Volfman ,  Yoram Uziel

IPC: G01B11/27

Abstract: A metrology target is disclosed, in accordance with one or more embodiments of the present disclosure. The metrology target includes a first set of pattern elements having a first pitch, where the first set of pattern elements includes segmented pattern elements. The metrology target includes a second set of pattern elements having a second pitch, where the second set of pattern elements includes segmented pattern elements. The metrology target includes a third set of pattern elements having a third pitch, where the third set of pattern elements includes segmented pattern elements.

公开(公告)号：US11101153B2

公开(公告)日：2021-08-24

申请号：US16496918

申请日：2019-08-23

Applicant: KLA CORPORATION

Inventor： Vladimir Levinski ,  Yuri Paskover ,  Sharon Aharon ,  Amnon Manassen

IPC: H01L21/67 ,  G03F7/20 ,  H01L21/66 ,  G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  H01L23/544

Abstract: A parameter-stable misregistration measurement amelioration system and method including providing a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical, using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the sets of measurement parameters, identifying and removing a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.