公开(公告)号：US09559496B2

公开(公告)日：2017-01-31

申请号：US14951149

申请日：2015-11-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/028 ,  H01S5/22

CPC classification number: H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.

Abstract translation: 一种激光源，包括具有有源区的半导体层序列和具有第一和第二部分区域的辐射耦合输出区域和滤波器结构。 有源区产生相干的第一电磁辐射和非相干的第二电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一部分区域和第二部分区域发射。 滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。 滤波器结构包括至少一个第一滤波器元件，其布置在发射方向上的半导体层序列的下游，并且其具有至少一个包括对电磁辐射不透明的材料的层。

公开(公告)号：US09543218B2

公开(公告)日：2017-01-10

申请号：US14060068

申请日：2013-10-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Uwe Strauss

IPC: H01L21/66 ,  H01S5/22

CPC classification number: H01L22/10 ,  H01L22/12 ,  H01S5/22 ,  H01S2301/173

Abstract: A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from the active region is removed in regions. The material is removed using a dry-chemical removal of the semiconductor layer sequence. A property of a process gas is monitored during the removal to determine that the indicator layer has been reached based on a change in the property of the process gas.

Abstract translation: 可以使用一种方法来制造半导体部件。 半导体层序列具有用于产生辐射的有源区，并且还具有指示层。 在区域中去除布置在远离有源区域的指示层的该侧上的半导体层序列的材料。 使用干法去除半导体层序列来去除材料。 在去除期间监测处理气体的性质，以基于处理气体的性质的变化来确定已经达到指示剂层。

公开(公告)号：US20160268775A1

公开(公告)日：2016-09-15

申请号：US15029372

申请日：2014-10-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christoph Eichler ,  Jens Müller ,  Fabian Kopp

IPC: H01S5/22 ,  H01S5/10 ,  H01S5/02

CPC classification number: H01S5/22 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/1014 ,  H01S5/1017 ,  H01S5/4031

Abstract: A semiconductor laser includes a main body and a ridge structure arranged on the main body, the ridge structure being oriented along a longitudinal axis above an active zone, wherein the ridge structure has a first width, the ridge structure has two opposite end faces along the longitudinal axis, adjacent to at least one end face, the ridge structure has an end section arranged on one side with respect to a center axis of the ridge structure such that the ridge structure is widened on one side adjacent to the end face, and on an opposite side of the ridge structure relative to the end section a fracture trench is arranged adjacent to the end face and at a distance from the ridge structure in a surface of the main body.

Abstract translation: 半导体激光器包括主体和布置在主体上的脊结构，脊结构沿着活动区域上方的纵向轴线定向，其中脊结构具有第一宽度，脊结构具有沿着第二宽度的两个相对端面 纵向轴线与至少一个端面相邻，所述脊状结构具有相对于所述脊状结构的中心轴线一侧布置的端部，使得所述脊部结构在邻近所述端面的一侧上变宽，并且在 相对于端部部分，脊部结构的相反侧，断裂沟槽被布置成与主体的表面中的端面相距离脊部结构。

公开(公告)号：US09373937B2

公开(公告)日：2016-06-21

申请号：US14430685

申请日：2013-09-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Uwe Strauβ ,  Teresa Wurm ,  Adrian Stefan Avramescu ,  Georg Brüderl ,  Christoph Eichler ,  Sven Gerhard

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/30 ,  H01S5/343 ,  H01S5/32 ,  H01S5/40

CPC classification number: H01S5/2031 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031

Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1−x−y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.

Abstract translation: 半导体激光器包括具有至少以下层结构的叠加层的层结构：n掺杂外层，第三波导层，布置有发光结构的有源区，第二波导层 阻挡层，第一波导层，p掺杂外层。 第一，第二和第三波导层具有至少Al x In y Ga（1-x-y）N。阻挡层的Al含量比相邻的第一波导层的Al含量大至少2％。 阻挡层的Al含量从第一波导层向第二波导层增加。 层结构具有双面等级。 双面灰度被布置在阻挡层的高度处，使得阻挡层或整个阻挡层的至少一部分具有比第一波导层更大的宽度。

公开(公告)号：US09124072B2

公开(公告)日：2015-09-01

申请号：US14501213

申请日：2014-09-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Sönke Tautz

IPC: H01S5/00 ,  H01S5/343 ,  G02B1/11 ,  H01L33/58 ,  H01S5/02 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22 ,  H01S5/028 ,  H01S5/323

CPC classification number: H01S5/34333 ,  G02B1/11 ,  H01L33/58 ,  H01S5/0206 ,  H01S5/0264 ,  H01S5/0281 ,  H01S5/0286 ,  H01S5/2018 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/16 ,  H01S2301/18

Abstract: An optoelectronic semiconductor laser includes a growth substrate; a semiconductor layer sequence that generates laser radiation; a front facet at the growth substrate and at the semiconductor layer sequence, wherein the front facet constitutes a main light exit side for the laser radiation generated in the semiconductor laser and has a light exit region at the semiconductor layer sequence; a light blocking layer for the laser radiation, which partly covers at least the growth substrate at the front facet such that the light exit region is not covered by the light blocking layer; and a bonding pad at a side of the semiconductor layer sequence facing away from the growth substrate, wherein a distance between the bonding pad and the light blocking layer at least at the light exit region is 0.1 μm to 100 μm.

Abstract translation: 光电半导体激光器包括生长衬底; 产生激光辐射的半导体层序列; 在生长衬底和半导体层序列处的前刻面，其中前刻面构成用于在半导体激光器中产生的激光辐射的主光出射侧，并具有半导体层序列的光出射区域; 用于激光辐射的遮光层，其部分地至少覆盖在前刻面处的生长衬底，使得光出射区域不被遮光层覆盖; 以及在所述半导体层序列的背离所述生长衬底的一侧的接合焊盘，其中所述焊盘和所述光阻挡层之间的至少在所述光出射区域处的距离为0.1μm至100μm。

公开(公告)号：US20150244147A1

公开(公告)日：2015-08-27

申请号：US14418923

申请日：2013-07-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler

IPC: H01S5/10 ,  H01S5/343 ,  H01S5/323 ,  H01S5/028

CPC classification number: H01S5/1082 ,  H01S5/028 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0287 ,  H01S5/32341 ,  H01S5/343 ,  H01S2301/02 ,  H01S2301/18

Abstract: A method for producing a semiconductor laser diode is specified, comprising the following steps:—epitaxial iv growing a semiconductor layer sequence (2) having at least one active layer (3) on a growth substrate (1)—forming a front facet (5) on the semiconductor layer sequence (2) and the growth. substrate (1), wherein the front facet (5) is designed as a main. emission surface having a light emission region (6) for the laser light (30) generated in the completed semiconductor laser diode,—forming a coupling-out coating (9) on a second part (52) of the front facet (5), wherein the first. part (51) and the second part (52) are arranged at least partly alongside one another in a direction parallel to the front facet (5) and along a growth direction of the semiconductor layer sequence (2), such that the first part (51) is at least partly free of the coupling-out coating (9) and the second part (52) is at least partly free of the light blocking layer (8), and wherein the second part (52) has the light exit region (6),—forming a light blocking layer (8) on a first part (51) of the front facet (5). Furthermore, a semiconductor laser diode is specified.

Abstract translation: 规定了制造半导体激光二极管的方法，包括以下步骤：外延生长在生长衬底（1）上具有至少一个活性层（3）的半导体层序列（2），形成前面（5） ）在半导体层序列（2）上和生长。 基板（1），其中所述前刻面（5）被设计为主体。 具有在完成的半导体激光二极管中产生的用于激光（30）的发光区域（6）的发射表面，形成在所述前刻面（5）的第二部分（52）上的耦合输出涂层（9） 其中第一。 部分（51）和第二部分（52）至少部分地沿着平行于前面（5）的方向并沿着半导体层序列（2）的生长方向彼此并排布置，使得第一部分 51）至少部分地不具有耦合出的涂层（9），并且第二部分（52）至少部分地没有遮光层（8），并且其中第二部分（52）具有光出射区域 （6）， - 在所述前刻面（5）的第一部分（51）上形成遮光层（8）。 此外，规定了半导体激光二极管。

公开(公告)号：US20150085889A1

公开(公告)日：2015-03-26

申请号：US14396729

申请日：2013-04-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Andreas Breidenassel ,  Alfred Lell

IPC: H01S5/10

CPC classification number: H01S5/1003 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0264 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/1237 ,  H01S5/2063 ,  H01S5/22 ,  H01S2301/166

Abstract: A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).

Abstract translation: 提供了包括边缘发射半导体本体（10）的半导体激光源。 半导体本体（10）包含具有n型层（111），有源层（112）和p型层（113）的半导体层堆叠（110），其形成用于产生电磁辐射，该电磁辐射包括相干 部分（21）。 半导体激光源被形成用于使电磁辐射的相干部分（21）与半导体本体（10）的相对于有源层（112）倾斜的去耦表面（101）去耦合。 半导体本体（10）包括相对于去耦表面（101）倾斜的另外的外表面（102A，102B，102C），并具有至少一个光扩散子区域（12,12A，12B，12C， 120A，120B），其被设置为将半导体层堆叠（110）产生的电磁辐射的一部分朝向另一外表面（102A，102B，102C）的方向引导。

公开(公告)号：US20140045279A1

公开(公告)日：2014-02-13

申请号：US14060068

申请日：2013-10-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christoph Eichler ,  Uwe Strauss

IPC: H01L21/66

CPC classification number: H01L22/10 ,  H01L22/12 ,  H01S5/22 ,  H01S2301/173

Abstract: A method can be used to produce a semiconductor component. A semiconductor layer sequence has an active region that is provided for generating radiation and also has an indicator layer. Material of the semiconductor layer sequence that is arranged on that side of the indicator layer that is remote from the active region is removed in regions. The material is removed using a dry-chemical removal of the semiconductor layer sequence. A property of a process gas is monitored during the removal to determine that the indicator layer has been reached based on a change in the property of the process gas.

Abstract translation: 可以使用一种方法来制造半导体部件。 半导体层序列具有用于产生辐射的有源区，并且还具有指示层。 在区域中去除布置在远离有源区域的指示层的该侧上的半导体层序列的材料。 使用干法去除半导体层序列来去除材料。 在去除期间监测处理气体的性质，以基于处理气体的性质的变化来确定已经达到指示剂层。

公开(公告)号：US20130230067A1

公开(公告)日：2013-09-05

申请号：US13653537

申请日：2012-10-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christoph Eichler ,  Sonke Tautz

IPC: G02B1/11 ,  H01L33/58 ,  H01S5/02

CPC classification number: H01S5/34333 ,  G02B1/11 ,  H01L33/58 ,  H01S5/0206 ,  H01S5/0264 ,  H01S5/0281 ,  H01S5/0286 ,  H01S5/2018 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/16 ,  H01S2301/18

Abstract: A method for producing an optoelectronic semiconductor component includes: epitaxially growing a semiconductor layer sequence including an active layer on a growth substrate, shaping a front facet at the semiconductor layer sequence and the growth substrate, coating a part of the front facet with a light blocking layer for radiation generated in the finished semiconductor component, wherein the light blocking layer is produced by a directional coating method and the light blocking layer is structured during coating by shading by the growth substrate and/or by at least one dummy bar arranged at and/or alongside the growth substrate.

Abstract translation: 一种光电子半导体元件的制造方法，包括：在生长基板上外延生长包含活性层的半导体层序列，在半导体层顺序成形前面和生长基板，用阻光层涂布前面的一部分 在成品半导体部件中产生的辐射层，其中通过定向涂布法制造遮光层，并且遮光层在被生长衬底和/或至少一个布置在/ 或与生长基质一起。

公开(公告)号：US20230369831A1

公开(公告)日：2023-11-16

申请号：US18246889

申请日：2021-09-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Christoph Eichler ,  Lars Naehle ,  Sven Gerhard ,  Alfred Lell ,  Harald Koenig

IPC: H01S5/40 ,  H01S5/20 ,  H01L33/00 ,  H01S5/00 ,  H01S5/22 ,  H01S5/50 ,  H01S5/042

CPC classification number: H01S5/4031 ,  H01S5/2036 ,  H01L33/0045 ,  H01S5/0087 ,  H01S5/22 ,  H01S5/50 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/04253

Abstract: The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.