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公开(公告)号：US10396106B2
公开(公告)日：2019-08-27
申请号：US15594482
申请日：2017-05-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Andre Somers , Harald Koenig , Bernhard Stojetz , Andreas Loeffler , Alfred Lell
IPC: H01L27/12 , H01L21/02 , H01L21/20 , H01L21/762 , H01L21/268 , H01L21/3105 , H01L21/324 , H01S5/22 , H01S5/223 , H01S5/20
Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US08976831B2
公开(公告)日：2015-03-10
申请号：US14206676
申请日：2014-03-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
CPC classification number: H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
Abstract: An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
Abstract translation: 一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。 公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中 第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。
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Patent Agency Ranking
公开(公告)号：US20140211821A1
公开(公告)日：2014-07-31
申请号：US14206676
申请日：2014-03-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
IPC: H01S5/20
CPC classification number: H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
Abstract: An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
Abstract translation: 一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。 公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中 第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。
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公开(公告)号：US20230369831A1
公开(公告)日：2023-11-16
申请号：US18246889
申请日：2021-09-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Christoph Eichler , Lars Naehle , Sven Gerhard , Alfred Lell , Harald Koenig
CPC classification number: H01S5/4031 , H01S5/2036 , H01L33/0045 , H01S5/0087 , H01S5/22 , H01S5/50 , H01S5/04254 , H01S5/04256 , H01S5/04253
Abstract: The invention relates to a component with a main part and a contact structure. The main part has an active zone which is designed to generate electromagnetic radiation at least in some regions during the operation of the component. The contact structure has a plurality of individually actuatable segments. The component has a connection surface and a lateral surface running transversely to the connection surface, and the lateral surface is designed as a radiation passage surface of the component. The connection surface is designed to be structured, wherein the connection surface is defined by common internal boundary surfaces between the main part and the contact structure, and each segment has a local common boundary surface with the main part and is designed for a pixelated current impression into the main part. The invention additionally relates to a method for operating such a component.
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5.发明公开公开(公告)号：US20230283040A1
公开(公告)日：2023-09-07
申请号：US18006077
申请日：2021-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Jan Wagner , Lars Naehle , Sven Gerhard , Alfred Lell , Harald Koenig , Christoph Eichler , Georg Brüderl , Martin Rudolf Behringer
CPC classification number: H01S5/0207 , H01S5/4087 , H01S5/22 , H01S5/4031 , H01S5/026 , H01L33/0075 , H01L33/32 , H01S5/34
Abstract: The invention relates to a method for producing a radiation-emitting semiconductor body, including the following steps: providing a growth substrate having a main surface; producing a plurality of distributor structures on the main surface of the growth substrate; epitaxially depositing a compound semiconductor material on the main surface of the growth substrate, wherein the epitaxial growth of the compound semiconductor material varies along the main surface because of the distributor structures, such that the epitaxial deposition produces an epitaxial semiconductor layer sequence having at least a first emitter region and a second emitter region on the main surface, the first emitter region and the second emitter region being laterally adjacent to each other in a top view of a main surface of the semiconductor body, and the first emitter region and the second emitter region producing electromagnetic radiation of different wavelength ranges during operation. The invention also relates to a radiation-emitting semiconductor body.
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公开(公告)号：US10181695B2
公开(公告)日：2019-01-15
申请号：US15560068
申请日：2016-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Harald Koenig , Adrian Stefan Avramescu
Abstract: A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.
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公开(公告)号：US20180083415A1
公开(公告)日：2018-03-22
申请号：US15560068
申请日：2016-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Harald Koenig , Adrian Stefan Avramescu
CPC classification number: H01S5/026 , H01S5/0217 , H01S5/2009 , H01S5/22 , H01S5/2222 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/32 , H01S5/3211
Abstract: A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.
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