公开(公告)号：US08158995B2

公开(公告)日：2012-04-17

申请号：US11992815

申请日：2006-09-14

Applicant: Andreas Ploessl ,  Ralph Wirth

Inventor： Andreas Ploessl ,  Ralph Wirth

IPC: H01L33/46

CPC classification number: H01L33/0079 ,  H01L33/10 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a separately produced TCO supporting substrate (10), which is arranged at the semiconductor layer sequence and has a material from the group of transparent conductive oxides (TCO) and mechanically supports the semiconductor layer sequence (1).

Abstract translation: 公开了一种光电半导体芯片，其在操作期间从其前侧（7）发射电磁辐射，包括具有适于产生电磁辐射的有源区（4）的半导体层序列（1）和分开产生的TCO支撑衬底 10），其布置在半导体层序列处并且具有来自透明导电氧化物（TCO）的材料并且机械地支撑半导体层序列（1）。

公开(公告)号：US20110309392A1

公开(公告)日：2011-12-22

申请号：US12737980

申请日：2009-08-04

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L33/50

CPC classification number: H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic component (1) is specified, comprising a connection carrier (2) on which a radiation-emitting semiconductor chip (3) is arranged, and a conversion element (4) fixed to the connection carrier (2). The conversion element (4) spans the semiconductor chip (3) in such a way that the semiconductor chip (3) is surrounded by the conversion element (4) and the connection carrier (2), and the conversion element (4) consists of one of the following materials: ceramic, glass ceramic.

Abstract translation: 规定了光电子部件（1），其包括布置有发射辐射半导体芯片（3）的连接载体（2）和固定到连接载体（2）的转换元件（4）。 转换元件（4）以半导体芯片（3）被转换元件（4）和连接载体（2）包围的方式跨越半导体芯片（3），转换元件（4）由 以下材料之一：陶瓷，玻璃陶瓷。

公开(公告)号：US20110227124A1

公开(公告)日：2011-09-22

申请号：US13116846

申请日：2011-05-26

Applicant: Peter Heidborn ,  Reiner Windisch ,  Ralph Wirth

Inventor： Peter Heidborn ,  Reiner Windisch ,  Ralph Wirth

IPC: H01L33/62

CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by means of a contact zone.

Abstract translation: 一种LED半导体元件，包括至少一个第一辐射生成有源层和至少一个第二辐射生成有源层，其在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接，其中第一 有源层和第二有源层通过接触区域导电连接。

公开(公告)号：US08017953B2

公开(公告)日：2011-09-13

申请号：US12158474

申请日：2006-11-21

Applicant: Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

Inventor： Berthold Hahn ,  Ralph Wirth ,  Tony Albrecht ,  Magnus Ahlstedt ,  Stefan Illek ,  Klaus Streubel

IPC: H01L27/15

CPC classification number: H01L33/145 ,  H01L33/42

Abstract: An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

Abstract translation: 指定包括至少一个电流屏障的LED芯片。 电流屏障适合于通过减小的电流密度选择性地防止或减少由电连接器主体横向覆盖的区域中的辐射的产生。 电流扩散层含有至少一种TCO（透明导电氧化物）。 在特别优选的实施例中，包含至少一个电流屏障，其包括外延半导体层序列的材料，电流扩展层的材料和/或半导体层序列和电流扩展层之间的界面。 还指定了用于制造LED芯片的方法。

公开(公告)号：US08003974B2

公开(公告)日：2011-08-23

申请号：US12441758

申请日：2007-08-28

Applicant: Peter Heidborn ,  Reiner Windisch ,  Ralph Wirth

Inventor： Peter Heidborn ,  Reiner Windisch ,  Ralph Wirth

IPC: H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/18 ,  H01L29/22

CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.

Abstract translation: 一种LED半导体元件，具有至少一个第一辐射发生有源层和至少一个第二辐射产生有源层，该第一辐射产生有源层在垂直方向上堆叠在第一有源层上方并与第一有源层串联连接。 第一有源层和第二有源层通过接触区导电连接。

公开(公告)号：US20110024790A1

公开(公告)日：2011-02-03

申请号：US12934327

申请日：2009-03-26

Applicant: Walter Wegleiter ,  Ralph Wirth ,  Bernd Barchmann

Inventor： Walter Wegleiter ,  Ralph Wirth ,  Bernd Barchmann

IPC: H01L33/48 ,  H01L31/0203 ,  H01L31/18

CPC classification number: H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/1815 ,  H01L2924/00014

Abstract: An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Abstract translation: 光电子半导体部件包括具有连接侧的连接支撑件，安装在连接侧并电连接到连接支撑件的至少一个光电子半导体芯片，施加到连接侧并且至少覆盖连接侧的粘合促进中间膜 以及至少一个至少部分地围绕半导体芯片的辐射透射铸塑体，铸造体通过中间膜机械连接到连接支撑件。

公开(公告)号：US07838892B2

公开(公告)日：2010-11-23

申请号：US11118149

申请日：2005-04-29

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L29/207

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/30 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip, comprising a plurality of semiconductor function regions (10) arranged on a common carrier layer (1, 7), at least one of the semiconductor function regions being a defect region (12), and a contact structure (18) for making electrical contact with the optoelectronic semiconductor chip. The contact structure is electrically conductively connected to at least one of the semiconductor function regions, and the contact structure is adapted to be electrically separated, or it is electrically separated, from the defect region.

Abstract translation: 一种光电半导体芯片，包括布置在公共载体层（1,7）上的多个半导体功能区（10），至少一个半导体功能区是缺陷区（12）和接触结构（18） 用于与光电子半导体芯片进行电接触。 接触结构与半导体功能区域中的至少一个导电连接，并且接触结构适于与缺陷区域电隔离或者电隔离。

公开(公告)号：US20100038673A1

公开(公告)日：2010-02-18

申请号：US12527148

申请日：2008-01-31

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A chip includes at least one semiconductor body having a radiation-emitting region, and at least one first contact region which is provided for making electrical contact with the semiconductor body and is spaced apart laterally from the radiation-emitting region. An electrically conductive first contact layer which is transmissive to the emitted radiation and which connects a surface of the semiconductor body, is situated on the radiation exit side of the chip to the first contact region. The surface is free of the radiation-absorbing contact structures.

Abstract translation: 一种芯片包括至少一个具有辐射发射区域的半导体本体，以及至少一个第一接触区域，其被提供用于与半导体本体电接触并且与辐射发射区域横向隔开。 对于发射的辐射透射并且连接半导体本体的表面的导电的第一接触层位于芯片的辐射出口侧到第一接触区域。 该表面没有吸收辐射的接触结构。

公开(公告)号：US07663150B2

公开(公告)日：2010-02-16

申请号：US11485784

申请日：2006-07-13

Applicant: Ralph Wirth ,  Klaus Streubel

Inventor： Ralph Wirth ,  Klaus Streubel

IPC: H01L29/02

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic chip having a semiconductor body (14), which contains a radiation-emitting region (2), and a partial region (3) in which the surface (13) of the semiconductor body (14) is curved convexly toward a carrier (10). The lateral extent (2r) of the radiation-emitting region (2) is less than the lateral extent (2R) of the partial region (3). A method for producing such a chip is also described.

Abstract translation: 一种具有半导体本体（14）的光电子芯片，其包含辐射发射区域（2）和半导体本体（14）的表面（13）朝向载体凸出弯曲的部分区域（3） 10）。 辐射发射区域（2）的横向范围（2r）小于部分区域（3）的横向范围（2R）。 还描述了制造这种芯片的方法。

公开(公告)号：US20090262773A1

公开(公告)日：2009-10-22

申请号：US11992706

申请日：2006-09-14

Applicant: Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

Inventor： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

IPC: H01S5/042 ,  H01L33/00 ,  H01L31/0224 ,  H01L21/02 ,  H01L21/00

CPC classification number: H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

Abstract translation: 规定了包括半导体本体（10）和电流扩展层（3）的光电半导体部件。 至少在某个地方将电流扩展层（3）施加到半导体本体（10）。 在这种情况下，电流扩散层（3）包含在电流扩散层中形成透明导电金属氧化物（2）的金属（1），并且金属（1）的浓度（x）从该侧减小 （10）面向半导体本体（10）的电流扩展层（3）的电流扩散层（3）的电流扩展层（5）。 还公开了一种用于制造这种半导体部件的方法。