公开(公告)号：US11665883B2

公开(公告)日：2023-05-30

申请号：US17202465

申请日：2021-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkyoung Heo ,  Hyo-Sub Kim ,  Sohyun Park ,  Taejin Park ,  Seung-Heon Lee ,  Youn-Seok Choi ,  Sunghee Han ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/768 ,  H01L23/482 ,  H01L21/762

CPC classification number: H01L27/10814 ,  H01L21/7682 ,  H01L23/5329 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L21/76264 ,  H01L23/4821

Abstract: A semiconductor memory device includes; a first impurity region and a second impurity region spaced apart in a semiconductor substrate, a bit line electrically connected to the first impurity region, a storage node contact electrically connected to the second impurity region, an air gap between the bit line and the storage node contact, a landing pad electrically connected to the storage node contact, a buried dielectric pattern on a sidewall of the landing pad and on the air gap, and a spacer capping pattern between the buried dielectric pattern and the air gap.

公开(公告)号：US11615764B2

公开(公告)日：2023-03-28

申请号：US17161097

申请日：2021-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongah Kim ,  Taejin Park ,  Kyusung Kim ,  Jeongho Cho ,  Chihyun Cho ,  Dongheon Shin ,  Heewoong Yoon ,  Kihyuk Lee ,  Dongsun Lee ,  Donghan Lee ,  Gwangho Choi

IPC: G09G3/20 ,  G09G5/10

Abstract: Disclosed is an electronic device including a processor configured to set a wake-up luminance of a display, based on a wake-up illuminance, to set, upon detecting an illuminance change through the illuminance sensor, a first target luminance of the display by using a first threshold illuminance value at a time point of detecting the illuminance change, to identify whether a flag setting related to an update of a threshold illuminance value is changed, while changing a luminance of the display based on the first target luminance, to determine the first target luminance as a final luminance of the display when there is no change in the flag setting, to update the first threshold illuminance value to a second threshold illuminance value when there is a change in the flag setting, and to change a target luminance of the display from the first target luminance to a second target luminance by using the second threshold illuminance value.

公开(公告)号：US20220293420A1

公开(公告)日：2022-09-15

申请号：US17680996

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjun Lee ,  Keunnam Kim ,  Daehyoun Kim ,  Taejin Park ,  Sunghee Han

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.

公开(公告)号：US11270885B2

公开(公告)日：2022-03-08

申请号：US16776948

申请日：2020-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjun Lee ,  Keunnam Kim ,  Daehyoun Kim ,  Taejin Park ,  Sunghee Han

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.

公开(公告)号：US20210248978A1

公开(公告)日：2021-08-12

申请号：US17161097

申请日：2021-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongah KIM ,  Taejin Park ,  Kyusung Kim ,  Jeongho Cho ,  Chihyun Cho ,  Dongheon Shin ,  Heewoong Yoon ,  Kihyuk Lee ,  Dongsun Lee ,  Donghan Lee ,  Gwangho Choi

IPC: G09G5/10 ,  G09G3/20

Abstract: Disclosed is an electronic device including a processor configured to set a wake-up luminance of a display, based on a wake-up illuminance, to set, upon detecting an illuminance change through the illuminance sensor, a first target luminance of the display by using a first threshold illuminance value at a time point of detecting the illuminance change, to identify whether a flag setting related to an update of a threshold illuminance value is changed, while changing a luminance of the display based on the first target luminance, to determine the first target luminance as a final luminance of the display when there is no change in the flag setting, to update the first threshold illuminance value to a second threshold illuminance value when there is a change in the flag setting, and to change a target luminance of the display from the first target luminance to a second target luminance by using the second threshold illuminance value.

公开(公告)号：US11037930B2

公开(公告)日：2021-06-15

申请号：US16670232

申请日：2019-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Park ,  Keunnam Kim ,  Huijung Kim ,  Sohyun Park ,  Jaehwan Cho ,  Yoosang Hwang

IPC: H01L27/108

Abstract: A semiconductor device includes a substrate, a bit line structure on the substrate, a contact plug structure being adjacent to the bit line structure and extending in a vertical direction perpendicular to an upper surface of the substrate, and a capacitor electrically connected to the contact plug structure. The contact plug structure includes a lower contact plug, a metal silicide pattern, and an upper contact plug that are sequentially stacked on the substrate. The metal silicide pattern has an L-shaped cross section.

公开(公告)号：US20170323893A1

公开(公告)日：2017-11-09

申请号：US15584342

申请日：2017-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daeik Kim ,  Bong-Soo Kim ,  Jemin Park ,  Taejin Park ,  Yoosang Hwang

IPC: H01L27/108

CPC classification number: H01L27/10885 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10852 ,  H01L27/10876

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.