公开(公告)号：US11149346B2

公开(公告)日：2021-10-19

申请号：US16244906

申请日：2019-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim ,  Hyeonjin Shin ,  Kyung-Eun Byun ,  Keunwook Shin ,  Changseok Lee ,  Seunggeol Nam ,  Sungjoo An ,  Janghee Lee ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/26 ,  C01B32/186 ,  C23C14/02 ,  C23C16/56 ,  C23C14/06

Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.

公开(公告)号：US11088077B2

公开(公告)日：2021-08-10

申请号：US16866033

申请日：2020-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US11069619B2

公开(公告)日：2021-07-20

申请号：US16238208

申请日：2019-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol Nam ,  Hyeonjin Shin ,  Keunwook Shin ,  Changhyun Kim ,  Kyung-Eun Byun ,  Hyunjae Song ,  Eunkyu Lee ,  Changseok Lee ,  Alum Jung ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522

Abstract: An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.

公开(公告)号：US20200032388A1

公开(公告)日：2020-01-30

申请号：US16244906

申请日：2019-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Kim ,  Hyeonjin Shin ,  Kyung-Eun Byun ,  Keunwook Shin ,  Changseok Lee ,  Seunggeol Nam ,  Sungjoo An ,  Janghee Lee ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/26 ,  C01B32/186 ,  C23C14/06 ,  C23C16/56 ,  C23C14/02

Abstract: Provided are methods of directly growing a carbon material. The method may include a first operation and a second operation. The first operation may include adsorbing carbons onto a substrate by supplying the carbons to the substrate. The second operation may include removing unreacted carbon residues from the substrate after suspending the supplying the carbons of the first operation. The two operations may be repeated until a desired graphene is formed on the substrate. The substrate may be maintained at a temperature less than 700° C. In another embodiment, the method may include forming a carbon layer on a substrate, removing carbons that are not directly adsorbed to the substrate on the carbon layer, and repeating the two operations until desired graphene is formed on the substrate. The forming of the carbon layer includes supplying individual carbons onto the substrate by preparing the individual carbons.

公开(公告)号：US10229881B2

公开(公告)日：2019-03-12

申请号：US14814938

申请日：2015-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US10133176B2

公开(公告)日：2018-11-20

申请号：US14825792

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Seol ,  Sangwon Kim ,  Hyeonjin Shin ,  Seongjun Park ,  Yeonchoo Cho

IPC: G03F7/11 ,  G03F7/09

Abstract: A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material.