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    SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME
    43.
    发明申请
    SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    半导体基板及其制造方法

    公开(公告)号：US20140042493A1

    公开(公告)日：2014-02-13

    申请号：US14114124

    申请日：2011-07-08

    Applicant: Shiro Sakai

    Inventor： Shiro Sakai

    IPC: H01L29/06

    CPC classification number: H01L33/32 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02664 ,  H01L29/0688 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22

    Abstract: Disclosed are a flat and thin semiconductor substrate, which is formed on a heterogeneous substrate to be easily lifted-off from the heterogeneous substrate, a semiconductor device including the same, and a method of fabricating the same. The semiconductor substrate includes a substrate having a plurality of semispherical protrusions arranged at a predetermined interval on a first plane, and a first semiconductor layer formed on the first plane of the substrate.

    Abstract translation: 公开了一种平坦且薄的半导体衬底，其形成在异质衬底上以便容易地从异质衬底剥离，包括该非晶衬底的半导体器件及其制造方法。 半导体衬底包括具有在第一平面上以预定间隔布置的多个半球形突起的衬底和形成在衬底的第一平面上的第一半导体层。

    Semiconductor substrate, semiconductor device, and manufacturing methods thereof
    44.
    发明授权
    Semiconductor substrate, semiconductor device, and manufacturing methods thereof 有权
    半导体衬底，半导体器件及其制造方法

    公开(公告)号：US08564134B2

    公开(公告)日：2013-10-22

    申请号：US12875649

    申请日：2010-09-03

    Applicant: Shiro Sakai

    Inventor： Shiro Sakai

    IPC: H01L23/52

    CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02656 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention provides a method of manufacturing a gallium nitride (GaN) substrate on a heterogeneous substrate at low cost while realizing performance improvement and long operational lifespan of semiconductor devices, such as LEDs or laser diodes, which are manufactured using the GaN substrate. The semiconductor substrate includes a substrate, a first semiconductor layer arranged on the substrate, a mask arranged on a first region of the first semiconductor layer, a metallic material layer arranged on the first semiconductor layer and the mask, the metallic material layer being arranged in a direction intersecting the mask, a second semiconductor layer arranged on the first semiconductor layer and the metallic material layer, and a cavity in the first semiconductor layer and arranged under the metallic material layer.

    Abstract translation: 本发明提供了一种在异质衬底上以低成本制造氮化镓（GaN）衬底的方法，同时实现使用GaN衬底制造的诸如LED或激光二极管的半导体器件的性能改进和长使用寿命。 半导体衬底包括衬底，布置在衬底上的第一半导体层，布置在第一半导体层的第一区域上的掩模，布置在第一半导体层和掩模上的金属材料层，金属材料层布置在 与掩模相交的方向，配置在第一半导体层和金属材料层上的第二半导体层，以及配置在金属材料层的下方的第一半导体层的空腔。

    SPECTRUM DETECTOR
    45.
    发明申请
    SPECTRUM DETECTOR 有权
    光谱检测器

    公开(公告)号：US20120057156A1

    公开(公告)日：2012-03-08

    申请号：US13321082

    申请日：2009-08-17

    Applicant: Shiro Sakai ,  Won Chul Seo ,  Dae Won Kim

    Inventor： Shiro Sakai ,  Won Chul Seo ,  Dae Won Kim

    IPC: G01J3/18

    CPC classification number: G01J3/0235 ,  B82Y20/00 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0259 ,  G01J3/36 ,  G01J3/42 ,  G01J2003/1213

    Abstract: Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system.

    Abstract translation: 提供了能够小型化并且不需要复杂的光轴对准的光谱检测器。 本发明的光谱检测器包括：基板; 形成在所述基板上并包括具有多个凸部的半导体的光电探测器; 以及波长检测电路，用于从入射到光电检测器上的光检测透过多个凸部的光的波长。 根据本发明，可以提供一种小型光谱检测器，其可以容易地检测包括在未知波长的光中的峰值波长分布，而不需要使用诸如光栅或棱镜的光学设备，从而不需要 复合光学系统的光轴对准。

    OPTICAL DETECTOR AND SPECTRUM DETECTOR
    46.
    发明申请
    OPTICAL DETECTOR AND SPECTRUM DETECTOR 审中-公开
    光学检测器和光谱检测器

    公开(公告)号：US20110309461A1

    公开(公告)日：2011-12-22

    申请号：US13203190

    申请日：2009-03-30

    Applicant: Shiro Sakai

    Inventor： Shiro Sakai

    IPC: H01L31/0232 ,  H01L31/18

    CPC classification number: B82Y20/00 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/0259 ,  G01J3/18 ,  G02B1/005 ,  G02B2207/101 ,  H01L27/1446 ,  H01L31/02327

    Abstract: A photodetector and a spectrum detector, which can be miniaturized and do not require a complicated alignment of an optical axis, are disclosed. A photodetector comprises a substrate and a semiconductor that is formed on the substrate and has a plurality of convex portions. The photodetector detects light transmitted through the plurality of convex portions among light incident on the plurality of convex portions. Accordingly, it is possible to detect light with a specific peak wavelength without using an optical component such as a diffraction grating or prism, so that a small-sized photodetector that does not require a complicated alignment of the optical axis in an optical system may be implemented.

    Abstract translation: 公开了可以小型化并且不需要光轴的复杂对准的光电检测器和光谱检测器。 光电检测器包括基板和形成在基板上并具有多个凸部的半导体。 光检测器在入射到多个凸部的光中检测透过多个凸部的光。 因此，可以在不使用诸如衍射光栅或棱镜的光学部件的情况下检测具有特定峰值波长的光，使得不需要在光学系统中光轴的复杂对准的小尺寸光电检测器可以是 实施。

    OPERATING VALVE, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD
    48.
    发明申请
    OPERATING VALVE, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD 有权
    操作阀，曝光装置和装置制造方法

    公开(公告)号：US20100091261A1

    公开(公告)日：2010-04-15

    申请号：US12574333

    申请日：2009-10-06

    Applicant: Hiroyuki Eki ,  Shiro Sakai

    Inventor： Hiroyuki Eki ,  Shiro Sakai

    IPC: G03B27/58 ,  F16K1/00

    CPC classification number: F16K51/02 ,  G03F7/707 ,  G03F7/70841 ,  Y10T29/49 ,  Y10T279/11

    Abstract: An operating valve of the present invention is a differential pressure operating valve 100 for performing a vacuum suction of a substrate, the operating valve comprises a body 4 having an opening which is provided at an exhaust side for exhausting an air from an inside to an outside and is opposed to a suction side for sucking the air from the outside to the inside, a valve 8, and a spring 9 whose one end is connected with one of the suction side and the exhaust side of the body 4 and the other end is connected with the valve 8. The spring 9 is configured to stretch or compress in accordance with a differential pressure between the suction side and the exhaust side, and the valve 8 is provided with at least one hole.

    Abstract translation: 本发明的操作阀是用于对基板进行真空抽吸的压差操作阀100，操作阀包括一个主体4，该主体4具有设置在排气侧的开口，用于从内部向外部排出空气 并且与吸入侧相对，用于从外部向内部吸入空气，阀8和弹簧9，其一端与主体4的吸入侧和排气侧中的一个连接，另一端为 与阀8连接。弹簧9构造成根据吸力侧和排气侧之间的压差拉伸或压缩，并且阀8设置有至少一个孔。

    Light emitting device having light emitting elements
    49.
    发明授权
    Light emitting device having light emitting elements 有权
    具有发光元件的发光器件

    公开(公告)号：US07646031B2

    公开(公告)日：2010-01-12

    申请号：US12479380

    申请日：2009-06-05

    Applicant: Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

    Inventor： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

    IPC: H01L33/00

    CPC classification number: H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

    Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

    Abstract translation: 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

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