公开(公告)号：US20210219430A1

公开(公告)日：2021-07-15

申请号：US17134316

申请日：2020-12-26

Applicant: TDK CORPORATION

Inventor： Yuichiro OKUYAMA ,  Takeshi OOHASHI ,  Hajime KUWAJIMA ,  Takashi OHTSUKA ,  Kazuhiro YOSHIKAWA ,  Kenichi YOSHIDA

IPC: H05K1/16 ,  H05K1/02

Abstract: Disclosed herein is an electronic component that includes a substrate and a plurality of conductive layers and a plurality of insulating layers which are alternately laminated on the substrate. The side surface of at least one of the plurality of insulating layers has a recessed part set back from a side surface of the substrate and a projecting part projecting from the recessed part.

公开(公告)号：US20210204406A1

公开(公告)日：2021-07-01

申请号：US17132626

申请日：2020-12-23

Applicant: TDK Corporation

Inventor： Takeshi OOHASHI ,  Shinichiro TODA ,  Daiki KUSUNOKI ,  Takashi OHTSUKA ,  Kazuhiro YOSHIKAWA ,  Kenichi YOSHIDA

IPC: H05K1/16 ,  H01G4/228 ,  H01G4/33 ,  H01G4/40 ,  H01L49/02

Abstract: Disclosed herein is an electronic component that includes a first conductive layer including a lower electrode and a first inductor pattern, a dielectric film that covers the lower electrode, an upper electrode laminated on the lower electrode through the dielectric film, an insulating layer that covers the first conductive layer, dielectric film, and upper electrode, and a second conductive layer formed on the insulating layer and including a second inductor pattern. The first and second inductor patterns are connected in parallel through via conductors penetrating the insulating layer.

公开(公告)号：US20190287726A1

公开(公告)日：2019-09-19

申请号：US16354373

申请日：2019-03-15

Applicant: TDK Corporation

Inventor： Kazuhiro YOSHIKAWA ,  Daiki ISHII ,  Kenichi YOSHIDA

IPC: H01G4/33 ,  H01G4/30 ,  H01G4/012 ,  H01G4/06

Abstract: A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.

公开(公告)号：US20180102220A1

公开(公告)日：2018-04-12

申请号：US15725571

申请日：2017-10-05

Applicant: TDK CORPORATION

Inventor： Hiroshi TAKASAKI ,  Masahiro HIRAOKA ,  Hitoshi SAITA ,  Kenichi YOSHIDA

IPC: H01G4/33 ,  H01L49/02 ,  H01L29/94 ,  H01G7/06 ,  H01G4/018 ,  H01G4/40 ,  H01G4/005

Abstract: A thin-film capacitor includes a capacitor section in which electrode layers and dielectric layers are alternately stacked and which includes a hole portion that extends to the electrode layer. In a cross-section which is perpendicular to a stacking surface of the capacitor section and which passes through the hole portion, a side surface of the hole portion extends along a reference line extending in a direction intersecting the stacking surface, the dielectric layer extends up to the reference line toward the hole portion, and a gap is formed between the side surface of the pair electrode layer and the reference line.

公开(公告)号：US20170318675A1

公开(公告)日：2017-11-02

申请号：US15581606

申请日：2017-04-28

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Tatsuya HARADA

IPC: H05K1/11 ,  H05K1/09 ,  H05K3/16 ,  H05K3/42

CPC classification number: H05K1/115 ,  C23C28/02 ,  H01L21/768 ,  H01L23/147 ,  H01L23/48 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/16 ,  H05K3/422 ,  H05K3/426 ,  H05K2201/0317 ,  H05K2201/09563 ,  H05K2201/0959

Abstract: A through wiring substrate comprises a substrate having a pair of principal surfaces and a through hole penetrating between the pair of principal surfaces, the pair of principal surfaces and an inner surface of the through hole being electrically insulative; a through electrode provided on the inner surface of the through hole; a first wiring layer provided on one of the principal surfaces and connected to the through electrode; a second wiring layer provided on the other of the principal surfaces and connected to the through electrode; an underlying metal layer provided between the one of the principal surfaces and the first wiring layer; and catalyst metal particles existing between the underlying metal layer and the first wiring layer and between the through electrode and the inner surface of the through hole.

公开(公告)号：US20140291021A1

公开(公告)日：2014-10-02

申请号：US14219766

申请日：2014-03-19

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01R4/02

CPC classification number: H01R4/02 ,  B23K35/00 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/16238 ,  H01L2224/16502 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81805 ,  H01L2224/81825 ,  H01L2924/01322 ,  H05K3/3463 ,  H05K3/4007 ,  H05K2201/0367 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A junction structure for electronic device having an excellent bonding strength is provided. A junction structure for electronic device in accordance with one aspect of the present invention includes a first metal layer containing nickel and a second metal layer containing gold, tin, and nickel, while the second metal layer includes an AuSn eutectic phase.

Abstract translation: 提供了具有优异的接合强度的电子器件的接合结构。 根据本发明的一个方面的用于电子器件的接合结构包括含有镍的第一金属层和含有金，锡和镍的第二金属层，而第二金属层包括AuSn共晶相。

公开(公告)号：US20140054769A1

公开(公告)日：2014-02-27

申请号：US13960291

申请日：2013-08-06

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05571 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.

Abstract translation: 优选的端子结构包括基材; 形成在基材上的电极; 绝缘覆盖层，形成在所述基底材料上和所述电极上，并且具有暴露所述电极的至少一部分的开口; 含有Ni的下凸块金属层，填充电极上的开口; 以及包含Sn和Ti的圆顶状凸起，覆盖下凸块状金属层，其中至少部分下凸块金属层具有夹在外部电极和绝缘覆盖层之间的部分。

公开(公告)号：US20130192873A1

公开(公告)日：2013-08-01

申请号：US13678107

申请日：2012-11-15

Applicant: TDK CORPORATION

Inventor： Makoto ORIKASA ,  Hideyuki SEIKE ,  Noboru ITO ,  Kenichi YOSHIDA ,  Yuhei HORIKAWA

IPC: H01B1/00

CPC classification number: H01B1/00 ,  H01B1/026

Abstract: This structure body includes a conductor comprising Cu as a main component, an intermediate layer formed on the conductor, and a protective layer formed on the intermediate layer, the intermediate layer includes at least Cu, Sn, Ni, and P, and the protective layer includes at least Ni and P.

Abstract translation: 该结构体包括以Cu为主要成分的导体，形成在导体上的中间层和形成在中间层上的保护层，中间层至少包括Cu，Sn，Ni和P，保护层 至少包括Ni和P.