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    Reactive nano-layer material for MEMS packaging
    41.
    发明申请
    Reactive nano-layer material for MEMS packaging 审中-公开
    用于MEMS封装的反应性纳米层材料

    公开(公告)号：US20060220223A1

    公开(公告)日：2006-10-05

    申请号：US11092054

    申请日：2005-03-29

    Applicant: Daoqiang Lu ,  John Heck

    Inventor： Daoqiang Lu ,  John Heck

    IPC: H01L23/12

    CPC classification number: B81C1/00269 ,  B81B2201/014 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/035

    Abstract: According to one embodiment an apparatus and method for MEMS packaging including a reactive nano-layer is presented. The apparatus comprises a substrate, an environmentally sensitive device on the substrate, a cap to fit over the device, and a hermetic seal between the cap and the substrate. The hermetic seal comprises a solder layer, and a reactive layer including one or more elements that react together through an initiating energy to emit exothermic heat to melt the solder layer.

    Abstract translation: 根据一个实施例，提出了包括反应性纳米层的用于MEMS封装的装置和方法。 该设备包括基底，在基底上的环境敏感的装置，适合装置的盖子，以及盖子和基底之间的气密密封。 气密密封件包括焊料层，以及包括一个或多个元件的反应层，其通过引发能量一起反应以发射放热以熔化焊料层。

    Micro-electro-mechanical switch, and methods of making and using it
    42.
    发明授权
    Micro-electro-mechanical switch, and methods of making and using it 有权
    微机电开关及其制作和使用方法

    公开(公告)号：US07002441B2

    公开(公告)日：2006-02-21

    申请号：US10914537

    申请日：2004-08-09

    Applicant: Brandon W. Pillans ,  David I. Forehand

    Inventor： Brandon W. Pillans ,  David I. Forehand

    IPC: H01H51/22

    CPC classification number: B81B3/0008 ,  B81B3/001 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/04 ,  H01H1/06 ,  H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

    Abstract: A micro-electro-mechanical (MEMS) switch (10, 110) has an electrode (22, 122) covered by a dielectric layer (23, 123), and has a flexible conductive membrane (31, 131) which moves between positions spaced from and engaging the dielectric layer. At least one of the membrane and dielectric layer has a textured surface (138) that engages the other thereof in the actuated position. The textured surface reduces the area of physical contact through which electric charge from the membrane can tunnel into and become trapped within the dielectric layer. This reduces the amount of trapped charge that could act to latch the membrane in its actuated position, which in turn effects a significant increase in the operational lifetime of the switch.

    Abstract translation: 微电子机械（MEMS）开关（10,110）具有由电介质层（23,123）覆盖的电极（22,122），并且具有柔性导电膜（31,131），其在间隔开的位置 从电介质层接合和接合。 膜和电介质层中的至少一个具有纹理化表面（138），其在致动位置与另一个接合。 纹理表面减小了物理接触的面积，通过该面积，来自膜的电荷可以穿透入电介质层并被捕获在电介质层内。 这减少了可能用于将膜闩锁在其致动位置的捕获电荷的量，这反过来又显着地增加了开关的使用寿命。

    MEMS encapsulated structure and method of making same
    46.
    发明授权
    MEMS encapsulated structure and method of making same 有权
    MEMS封装结构及其制作方法

    公开(公告)号：US06800503B2

    公开(公告)日：2004-10-05

    申请号：US10300520

    申请日：2002-11-20

    Applicant: Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

    Inventor： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

    IPC: H01L2100

    CPC classification number: B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

    Abstract: A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

    Abstract translation: 一种制造封装的微电子机械系统（MEMS）的方法及其制造方法，包括形成电介质层，图案化介电层的上表面以形成沟槽，在沟槽内形成释放材料，图案化上表面 形成另一个沟槽，形成第一封装层，该第一封装层包括另一个沟槽内的侧壁，在第一封装层内形成核心层，以及在芯层上方形成第二封装层，其中第二封装层被连接 到第一封装层的侧壁。 或者，该方法包括通过光掩模工艺形成多层MEMS结构以形成第一金属层，第二层包括电介质层和第二金属层以及第三金属层。 芯层和封装层由具有互补的电，机械和/或磁性的材料制成。

    Micro device
    47.
    发明申请
    Micro device 失效
    微型器件

    公开(公告)号：US20040149558A1

    公开(公告)日：2004-08-05

    申请号：US10478305

    申请日：2003-12-03

    Inventor： Yoshito Nakanishi ,  Yoshito Shimizu ,  Hiroyuki Yabuki

    IPC: H01H051/22

    CPC classification number: H01P1/127 ,  B81B3/0086 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/056 ,  B81B2203/058 ,  H01H59/0009 ,  H01H2001/0068 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/02511

    Abstract: Resonators 4 and 5 are able to oscillate horizontally and vertically to substrate 1. Resonator 4 is primarily composed of a supporting portion in stationary contact with substrate 1, a movable portion including a contact surface making contact with resonator 5 and a contact surface making contact with electrode 7, and a crossing portion that couples the supporting portion and movable portion. Electrode 6 is disposed in the direction in which resonator 5 is spaced apart from resonator 4. Electrode 7 is disposed in the direction in which resonator 4 is spaced apart from resonator 5. Electrode 9 is disposed in a position that causes resonator 5 to generate electrostatic force in a direction different from the direction of both forces of attraction acting between resonators 4 and 5 and between resonator 5 and electrode 6.

    Abstract translation: 谐振器4和5能够水平和垂直地振荡到衬底1.谐振器4主要由与衬底1固定接触的支撑部分组成，可移动部分包括与谐振器5接触的接触表面和与谐振器5接触的接触表面 电极7和连接支撑部分和可移动部分的交叉部分。 电极6沿谐振器5与谐振器4间隔开的方向设置。电极7沿谐振器4与谐振器5间隔开的方向设置。电极9设置在使谐振器5产生静电的位置 在与谐振器4和5之间以及谐振器5和电极6之间的两个吸引力的方向不同的方向上的力。

    Integrated sensor having plurality of released beams for sensing acceleration and associated methods
    49.
    发明授权
    Integrated sensor having plurality of released beams for sensing acceleration and associated methods 有权
    集成传感器具有多个用于感测加速度和相关方法的释放光束

    公开(公告)号：US06750775B2

    公开(公告)日：2004-06-15

    申请号：US09792962

    申请日：2001-02-26

    Applicant: Tsiu Chiu Chan ,  Melvin Joseph DeSilva

    Inventor： Tsiu Chiu Chan ,  Melvin Joseph DeSilva

    IPC: G08B2100

    CPC classification number: G01P15/18 ,  B81B2201/014 ,  B81C1/00246 ,  B81C2203/0735 ,  G01P15/0802 ,  G01P15/135

    Abstract: An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction of movement. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a plurality of floating contacts positioned adjacent and lengthwise extending outwardly from said switch detecting circuit region for defining a plurality of released beams so that each of said plurality of released beams displaces in a predetermined direction responsive to acceleration. The plurality of released beams preferably includes at least two released beams lengthwise extending outwardly from the switch detecting circuit region to different predetermined lengths and at least two released beams lengthwise extending outwardly from the switch detecting circuit region to substantially the same predetermined lengths. The methods of forming an integrated sensor advantageously are preferably compatible with know integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.

    Abstract translation: 提供集成电路和方法用于感测诸如预定运动方向的加速度的活动。 集成释放的光束传感器优选地包括开关检测电路区域和连接到并且位于开关检测电路区域附近的传感器开关区域。 传感器切换区域优选地包括多个浮动触点，其位于邻近并纵向地从所述开关检测电路区域向外延伸，用于限定多个释放的波束，使得所述多个释放波束中的每一个响应加速度以预定方向移动。 多个释放的光束优选地包括至少两个从开关检测电路区域向外延伸到不同预定长度的释放光束，以及至少两个从开关检测电路区域向外延伸到大致相同的预定长度的释放光束。 有利地形成集成传感器的方法优选地与知道的集成电路制造工艺相兼容，例如用于CMOS电路制造，仅具有轻微的变化。

    CMOS-compatible MEM switches and method of making
    50.
    发明授权
    CMOS-compatible MEM switches and method of making 失效

    公开(公告)号：US06667245B2

    公开(公告)日：2003-12-23

    申请号：US10016894

    申请日：2001-12-13

    Applicant: Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    Inventor： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC: H01L2100

    CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    Abstract: A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

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