公开(公告)号：US06803637B2

公开(公告)日：2004-10-12

申请号：US10169464

申请日：2002-10-28

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B81B300

CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

Abstract: A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.

Abstract translation: 一种具有由具有第一掺杂类型的衬底材料制成的衬底的微机械部件，设置在衬底中的微机械功能结构以及至少部分地覆盖微机械功能结构的覆盖层。 微机械功能结构具有由具有第二掺杂类型的基底材料制成的区域，所述区域至少部分地被空腔包围，并且覆盖层具有由基底材料制成的多孔层。

公开(公告)号：US20040155010A1

公开(公告)日：2004-08-12

申请号：US10474968

申请日：2004-03-31

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B29D011/00

CPC classification number: B81B3/0083 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178 ,  C25F3/12 ,  C25F3/14 ,  H01L21/306 ,  H01L21/3081

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented. For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract translation: 提出了在硅衬底（1）中制造光学透明区域（5,6）的简单和成本有效的可能性，其中通过在硅衬底的空腔上使用任何厚度和光学透明区域的两个光学透明区域 能够实施。 为此目的，首先对硅衬底（1）的至少一个特定区域（5,6）进行多孔蚀刻。 此后，硅衬底（1）的规定的多孔区域（5,6）被氧化。

公开(公告)号：US20040135219A1

公开(公告)日：2004-07-15

申请号：US10466516

申请日：2004-01-30

Inventor： Michel Despont ,  Roy H Magnuson ,  Ute Drechsler

IPC: H01L021/00 ,  H01L029/82 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising said material and a noble metal layer (8) against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer (12) having a lower redox potential than said material, the sacrificial metal layer (12) being electrically connected to said noble metal layer (8).

Abstract translation: 一种用于在制造过程中保护包含所述材料的微结构材料和贵金属层（8）的方法，用于防止不期望的电化学蚀刻，包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层（12），所述牺牲金属 层（12）电连接到所述贵金属层（8）。

公开(公告)号：US20020014621A1

公开(公告)日：2002-02-07

申请号：US09895464

申请日：2001-07-02

Inventor： Tohru Den ,  Tatsuya Iwasaki

IPC: H01L047/00 ,  H01L021/00

CPC classification number: B01D71/025 ,  B01D67/0065 ,  B81B2203/0315 ,  B81C1/00031 ,  B81C2201/0114 ,  C04B38/0025 ,  C04B2111/00612 ,  C25D11/045 ,  H01L49/00 ,  C04B35/10 ,  C04B38/0003 ,  C04B41/4564

Abstract: A method of manufacturing a structure with pores which are formed by anodic oxidation and whose layout. pitch, position, direction, shape and the like can be controlled. The method includes the steps of: disposing a lamination film on a substrate, the lamination film being made of insulating layers and a layer to be anodically oxidized and containing aluminum as a main composition; and performing anodic oxidation starting from an end surface of the lamination film to form a plurality of pores having an axis substantially parallel to a surface of the substrate, wherein the layer to be anodically oxidized is sandwiched between the insulating layers, and a projected pattern substantially parallel to the axis of the pore is formed on at least one of the insulating layers at positions between the pores.

Abstract translation: 一种制造具有通过阳极氧化形成的孔的结构及其布局的方法。 可以控制节距，位置，方向，形状等。 该方法包括以下步骤：在基板上设置层压膜，层叠膜由绝缘层和要被阳极氧化并含有铝作为主要组成的层制成; 以及从所述层压膜的端面开始进行阳极氧化，以形成具有基本上平行于所述基板的表面的轴的多个孔，其中所述被阳极氧化的层被夹在所述绝缘层之间，并且基本上 在孔之间的位置处，在至少一个绝缘层上形成平行于孔的轴线。

公开(公告)号：US06306773B1

公开(公告)日：2001-10-23

申请号：US09496085

申请日：2000-02-01

Applicant: Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

Inventor： Christian Adås ,  Stefan Karlsson ,  Andrei Konstantinov ,  Christopher Harris ,  Thomas Hörman

IPC: H01L21302

CPC classification number: B81C1/00595 ,  B81C2201/0114 ,  B81C2201/0133 ,  H01L21/0475

Abstract: The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.

Abstract translation: 本发明涉及一种选择性蚀刻SiC的方法，该蚀刻是通过向与含有氟离子的蚀刻溶液接触并具有氧化效应的p型SiC层（3; 8）施加正电位而进行的 在SiC上。 本发明还涉及一种用于制造在SiC衬底上具有自由悬挂部分（即隔膜，悬臂或梁）的SiC微结构的方法，用于制造具有自由悬挂结构的SiC的MEMS器件的方法，以及用于 制造压阻式压力传感器，包括向与所述氟离子的蚀刻溶液接触并对SiC具有氧化作用的p型SiC层（8）施加正电位的步骤。

公开(公告)号：US20010028872A1

公开(公告)日：2001-10-11

申请号：US09867611

申请日：2001-05-31

Inventor： Tatsuya Iwasaki ,  Tohru Den

IPC: D01C005/00 ,  D01F009/12

CPC classification number: H01F1/009 ,  B81C1/00087 ,  B81C2201/0114 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/7325 ,  G11B5/743 ,  G11B5/855 ,  G11C2213/81 ,  H01F1/0081 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/939

Abstract: The invention provides a nanostructure including an anodized film including nanoholes. The anodized film is formed on a substrate having a surface including at least one material selected from the group consisting of semiconductors, noble metals, Mn, Fe, Co, Ni, Cu and carbon. The nanoholes are cut completely through the anodized film from the surface of the anodized film to the surface of the substrate. The nanoholes have a first diameter at the surface of the anodized film and a second diameter at the surface of the substrate. The nanoholes are characterized in that either a constriction exists at a location between the surface of the anodized film and the surface of the substrate, or the second diameter is greater than the first diameter.

公开(公告)号：US5997713A

公开(公告)日：1999-12-07

申请号：US74712

申请日：1998-05-08

Applicant: Charles P. Beetz, Jr. ,  Robert W. Boerstler ,  John Steinbeck ,  David R. Winn

Inventor： Charles P. Beetz, Jr. ,  Robert W. Boerstler ,  John Steinbeck ,  David R. Winn

IPC: H01J9/12 ,  B81B1/00 ,  B81C1/00 ,  C25F3/12 ,  H01J9/02 ,  H01J43/24 ,  H01L21/3063 ,  C25D5/34 ,  C25D5/48 ,  C25D9/06

CPC classification number: H01J43/246 ,  B81B1/004 ,  B81C1/00166 ,  B81C1/00595 ,  C25F3/12 ,  H01J9/02 ,  H01L21/3063 ,  B81C2201/0114 ,  Y10S977/888

Abstract: An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.

Abstract translation: 通过电解质中的p型硅元件的电化学蚀刻来制造具有细长的高纵横比通道的元件，例如微通道板，以形成延伸穿过该元件的通道。 电解质可以是水性电解质。 用作微通道板， 通道的硅表面可以转化为绝缘二氧化硅，并且具有高电子发射率的倍增极材料可以沉积到通道的绝缘表面上。 还公开了新的倍增极材料。

公开(公告)号：US20190013151A1

公开(公告)日：2019-01-10

申请号：US15803155

申请日：2017-11-03

Applicant: Honeywell International Inc.

Inventor： Steven Tin ,  Neil Krueger

IPC: H01G7/02 ,  H02N1/08 ,  B81C1/00 ,  H04B1/04

CPC classification number: H01G7/025 ,  B81C1/00515 ,  B81C2201/0114 ,  B81C2201/0115 ,  H02N1/08 ,  H04B1/04

Abstract: An ultra-high charge density electret is disclosed. The ultra-high charge density electret includes a three-dimensional structure having a plurality of sidewalls. A porous silicon dioxide film is formed on the plurality of sidewalls, and the porous silicon dioxide film is charged with a plurality of positive or negative ions.

公开(公告)号：US20180208459A1

公开(公告)日：2018-07-26

申请号：US15875635

申请日：2018-01-19

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

Inventor： Sabine TRUPP ,  Michael HENFLING ,  Karl NEUMEIER

IPC: B81C1/00

CPC classification number: B81C1/00206 ,  B81B2201/0214 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/016 ,  G01N27/128 ,  G01N33/0027 ,  Y02P70/521

Abstract: A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

公开(公告)号：US20180179657A1

公开(公告)日：2018-06-28

申请号：US15573408

申请日：2016-05-12

Applicant: Luxembourg Institute of Science and Technology ( LIST)

Inventor： Guillaume Lamblin ,  Damien Lenoble ,  Kevin Menguelti ,  Vincent Rogé

IPC: C25D11/02 ,  B81C1/00 ,  C25D11/04 ,  C23C14/16 ,  C23F17/00

CPC classification number: C25D11/022 ,  B81B2201/054 ,  B81B2203/0315 ,  B81C1/00031 ,  B81C1/00047 ,  B81C2201/0114 ,  C23C14/16 ,  C23F17/00 ,  C25D11/024 ,  C25D11/04 ,  C25D11/26 ,  F16K27/00

Abstract: The invention presents a method for producing micro- or nano-structures of an anodized valve metal on a substrate. The method allows for accurate production of the structures, involves a small number of steps and is highly repeatable.