公开(公告)号：US08241931B1

公开(公告)日：2012-08-14

申请号：US12899292

申请日：2010-10-06

Applicant: Christophe Antoine ,  John R. Martin

Inventor： Christophe Antoine ,  John R. Martin

IPC: H01L21/00

CPC classification number: B28D5/00 ,  B81C1/00158 ,  B81C2201/0192 ,  B81C2201/0195

Abstract: A method of producing a MEMS device provides a first substrate having a first interior surface and thickness, and a second substrate having a second interior surface. The method also forms at least one closed wall on at least one of the first and second substrates, weakens the first substrate in a plane generally parallel to the first interior surface, and secures the first substrate to the second substrate. The at least one closed wall extends between the first interior surface and the second interior surface. The method further separates a portion of the first substrate along the plane generally parallel to the first interior surface after securing the first and second substrates, and removes an excess portion of the first substrate to produce a reduced thickness first substrate of no greater than about 20 microns.

Abstract translation: 制造MEMS器件的方法提供具有第一内表面和厚度的第一基底和具有第二内表面的第二基底。 该方法还在至少一个第一和第二基底上形成至少一个闭合壁，在大致平行于第一内表面的平面中削弱第一基底，并将第一基底固定到第二基底。 所述至少一个封闭壁在所述第一内表面和所述第二内表面之间延伸。 该方法在固定第一和第二基板之后进一步分离第一基板的沿着大致平行于第一内表面的平面的一部分，并移除第一基板的多余部分以产生不大于约20的第一基板 微米。

公开(公告)号：US20110294306A1

公开(公告)日：2011-12-01

申请号：US13207304

申请日：2011-08-10

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/263

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN or SiC. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.

Abstract translation: 一种用于形成多材料薄膜的方法包括提供包括单晶硅的多材料供体衬底和包括GaN或SiC的上覆膜。 能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。 该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。 然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

公开(公告)号：US08012852B2

公开(公告)日：2011-09-06

申请号：US12789361

申请日：2010-05-27

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21/30

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US20100171153A1

公开(公告)日：2010-07-08

申请号：US12499027

申请日：2009-07-07

Applicant: Xiao (Charles) Yang

Inventor： Xiao (Charles) Yang

IPC: H01L29/84 ,  H01L21/30

CPC classification number: G01L9/0073 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/0192 ,  G01L9/0042 ,  G01L9/0054

Abstract: A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

Abstract translation: 使用IC-Foundry兼容工艺的单片集成MEMS压力传感器和CMOS衬底。 CMOS基板首先使用标准IC工艺完成。 然后将膜片添加到CMOS的顶部。 在一个实施例中，隔膜由具有应力消除波纹结构的沉积薄膜制成。 在另一个实施例中，膜片由层转移到CMOS衬底的单晶硅材料制成。 在一个实施例中，集成压力传感器由晶圆级的厚绝缘层封装。 采用IC代工兼容工艺的单片式压力传感器产生最高性能，最小的外形尺寸和最低的成本。

公开(公告)号：US07348258B2

公开(公告)日：2008-03-25

申请号：US10913701

申请日：2004-08-06

Applicant: Francois J. Henley ,  Nathan Cheung

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: H01L21/30 ,  H01L21/46

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供了扩张切割前沿以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US07208021B1

公开(公告)日：2007-04-24

申请号：US11058308

申请日：2005-02-14

Applicant: Lasha Vardosanidze ,  Zaza Taliashvili ,  Avto Tavkhelidze ,  Rodney Thomas Cox

Inventor： Lasha Vardosanidze ,  Zaza Taliashvili ,  Avto Tavkhelidze ,  Rodney Thomas Cox

IPC: H01L21/00

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C1/00484 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10T29/413 ,  Y10T29/49128 ,  Y10T29/49147

Abstract: In one aspect, the present invention provides a method for fabricating two layers separated by a gap comprising the steps of: (a) providing a first material; (b) treating the first material to reduce the number of available bonding centers; (c) placing a second material over the first material and allowing bonds to form between the two materials to form a composite; and (d) separating the composite so formed along the boundary of the two materials. In a further aspect, subsequent layers of material may be introduced to the composite by repeating steps (b) and (c) under conditions where adhesion between the subsequent layers is greater, smaller or substantially the same as the adhesion between the first and second material.

Abstract translation: 一方面，本发明提供一种用于制造由间隙分开的两层的方法，包括以下步骤：（a）提供第一材料; （b）处理第一材料以减少可用结合中心的数量; （c）将第二材料放置在第一材料上并允许在两种材料之间形成粘结以形成复合材料; 和（d）沿着两种材料的边界分离形成的复合材料。 在另一方面，随后的材料层可以在条件下通过重复步骤（b）和（c）而被引入到复合材料中，其中后续层之间的粘合力比第一和第二材料之间的粘合力更大，或更小或基本相同 。

公开(公告)号：US20030234075A1

公开(公告)日：2003-12-25

申请号：US10312864

申请日：2003-06-13

Inventor： Bernard Aspar ,  He Chrystelle Lagag

IPC: B32B001/00

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  Y10T156/1153 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1911 ,  Y10T156/1967

Abstract: A process for cutting out a block of material (10) comprising the following stages: (a) the formation in the block of a buried zone (12), embrittled by at least one stage of ion introduction, the buried zone defining at least one superficial part (14) of the block, (b) the formation at the level of the embrittled zone of at least one separation initiator (30, 36) by the use of a first means of separation chosen from amongst the insertion of a tool, the injection of a fluid, a thermal treatment and/or implantation of ions of an ionic nature different from that introduced during the preceding stage, and (c) the separation at the level of the embrittled zone of the superficial part (14) of the block from a remaining part (16), called the mass part, from the separation initiator (30, 36) by the use of a second means, different from the first means of separation and chosen from among a thermal treatment and/or the application of mechanical forces acting between the superficial part and the embrittled zone. Application for the manufacture of components for micro-electronics, opto-electronics or micro-mechanics.

Abstract translation: 一种用于切割材料块（10）的方法，包括以下阶段：（a）通过至少一个离子引入阶段脆化的埋入区（12）的块中的形成，所述掩埋区限定至少一个 块的表面部分（14），（b）通过使用从插入工具中选择的第一分离装置在至少一个分离引发剂（30,36）的脆化区的层面上形成， 流体的注入，离子性质的热处理和/或离子注入不同于在前一阶段引入的离子性离子，和（c）在所述表面部分（14）的脆化区域的水平分离 通过使用不同于第一分离装置的第二装置从选自热处理和/或应用程序的第二装置从分离引发剂（30,36）的剩余部分（16）中除去称为质量部分的块 在表面部分之间作用的机械力 脆弱的区域。 用于制造微电子，光电子或微机械元件的应用。

公开(公告)号：US20030113983A1

公开(公告)日：2003-06-19

申请号：US10268918

申请日：2002-10-09

Applicant: Silicon Genesis Corporation

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L021/30

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2658 ,  H01L21/76254

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US20020115264A1

公开(公告)日：2002-08-22

申请号：US09828082

申请日：2001-04-05

Inventor： Francois J. Henley ,  Nathan Cheung

IPC: B26F003/00 ,  B26F003/02

CPC classification number: H01L21/76254 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选择的方式将能量粒子（22）通过施主衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定施主衬底 所选深度以上的材料（12）和所选深度处的图案的颗粒。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US06335264B1

公开(公告)日：2002-01-01

申请号：US09663043

申请日：2000-09-15

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L21265

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.

Abstract translation: 一种从供体衬底（10）形成材料（12）的薄膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对高的浓度以限定上述施主衬底材料（12） 所选深度。 能量被提供到衬底的选定区域以从施主衬底切割材料薄膜。 将颗粒再次引入供体底物的供体底物的新鲜表面下方。 然后从供体基材上切下第二薄膜材料。