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公开(公告)号:US12009819B2
公开(公告)日:2024-06-11
申请号:US17222657
申请日:2021-04-05
Applicant: PSIQUANTUM CORP.
Inventor: Faraz Najafi , Qiaodan Jin Stone
IPC: H03K19/195 , G01J1/44 , H10N60/30 , H10N60/84
CPC classification number: H03K19/195 , G01J1/44 , H10N60/30 , H10N60/84 , G01J2001/442
Abstract: The various embodiments described herein include methods, devices, and systems for operating superconducting circuitry. In one aspect, a superconducting component includes: (1) a superconductor having a plurality of alternating narrow and wide portions, each wide portion having a corresponding terminal; and (2) a plurality of heat sources, each heat source thermally coupled to a corresponding narrow portion such that heat from the heat source is transmitted to the corresponding narrow portion; where the plurality of heat sources is electrically isolated from the superconductor.
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公开(公告)号:US11988551B2
公开(公告)日:2024-05-21
申请号:US17615020
申请日:2020-06-16
Applicant: Université de Genève , ID Quantique SA
Inventor: Matthieu Perrenoud , Félix Bussières , Misael Caloz
CPC classification number: G01J1/4228 , H10N60/30 , H10N60/84 , G01J2001/442
Abstract: A device for single-photon detection comprising two superconducting detectors, a bias-current source, a filter element and a readout circuit. Each detector forms a detection area for absorption of incident photons and is connected in parallel; each detector being maintained below its critical temperature and provided with an electrical bias current situated close to and below its critical current so as to be maintained in a non-resistive superconducting state, and configured to transition, at photon absorption, from the non-resistive state to a resistive state due to an increase in current density within the detector above the critical current. The readout circuit senses a voltage change corresponding to the, allowing creation of an event signal for each absorption of an incident photon by a detector. The device includes a current-redistribution portion for redistributing current arising after absorption of incident photons so as to avoid increases in current density above the critical current.
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公开(公告)号:US11977216B2
公开(公告)日:2024-05-07
申请号:US17766098
申请日:2020-10-12
Applicant: CARL ZEISS MICROSCOPY GMBH
Inventor: Daniel Schwedt , Tiemo Anhut
CPC classification number: G02B21/367 , G01J1/32 , G01J1/44 , G01J2001/442
Abstract: A light microscope and a method for capturing images with a light microscope includes guiding illumination light to a sample; guiding detection light from the sample to a plurality of photon-counting sensor elements, which each successively capture a plurality of photon counts; forming a plurality of photon count distributions to be analyzed and at least one reference photon count distribution from the photon counts; calculating a similarity between each photon count distribution to be analyzed and the reference photon count distribution; and identifying sensor elements as overdriven as a function of the calculated similarity of the corresponding photon count distribution(s) to be analyzed.
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公开(公告)号:US11953629B2
公开(公告)日:2024-04-09
申请号:US17367443
申请日:2021-07-05
Inventor: Ping-Hung Yin , Jia-Shyang Wang
IPC: G01S7/4865 , G01J1/44 , G01S7/481 , G01S7/484 , G01S7/4863 , G01S17/10 , G01S17/14 , G04F10/00 , H01L27/144 , H01L27/146 , H01L31/107
CPC classification number: G01S7/4865 , G01J1/44 , G01S7/4814 , G01S7/4816 , G01S7/484 , G01S7/4863 , G01S17/10 , G01S17/14 , G04F10/005 , H01L27/1446 , H01L27/14609 , H01L31/107 , G01J2001/442 , G01J2001/444 , G01J2001/4466 , G01J2001/448
Abstract: A light sensor and a ranging method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit operates the diode in a Geiger mode or an avalanche linear mode. The control circuit includes a time-to-digital converter, and the time-to-digital converter includes a counting circuit. The counting circuit includes a plurality of counting units. When the time-to-digital converter receives a sensing signal provided by the sensing sub-pixel, the control circuit generates a plurality of count values according to the sensing signal through the counting units of the counting circuit, where the count values are histogram data corresponding to a distance sensing result.
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公开(公告)号:US11921150B2
公开(公告)日:2024-03-05
申请号:US17295381
申请日:2019-11-14
Applicant: ams International AG
Inventor: Nenad Lilic
CPC classification number: G01R31/2635 , G01J1/44 , H03K21/08 , G01J2001/442 , G01J2001/4466
Abstract: An electric circuit arrangement to determine a level of an excess bias voltage of a single photon avalanche diode comprises an evaluation circuit being configured to determine a level of an excess bias voltage of the single photon avalanche diode in dependence on a signal course of an output signal of the single photon avalanche diode. In a first operational cycle of the circuit arrangement a voltage jump to the level of the excess bias voltage is generated at an output terminal, when a photon hits a photosensitive area of the single photon avalanche diode. In a subsequent second operational cycle, the output terminal of the single photon avalanche diode is coupled to a supply terminal.
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公开(公告)号:US11864867B2
公开(公告)日:2024-01-09
申请号:US17202554
申请日:2021-03-16
Applicant: HI LLC
Inventor: Alex Borisevich , Ryan Field
CPC classification number: A61B5/0082 , A61B5/4064 , A61B5/6803 , G01J1/44 , H01S5/062 , A61B2562/0238 , G01J2001/442 , G01J2001/4466
Abstract: An exemplary system includes a light source and a control circuit configured to apply voltage having a first polarity to the light source for a first time period to provide a threshold charge for the light source to start an emission of a light pulse that is directed at a target within a body. The control circuit is further configured to apply voltage having a second polarity opposite the first polarity to the light source for a second time period subsequent to the first time period to discharge the light source to stop the emission of the light pulse.
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公开(公告)号:US11846543B2
公开(公告)日:2023-12-19
申请号:US17794326
申请日:2021-01-19
Applicant: Paul Scherrer Institut
Inventor: Anna Bergamaschi , Bernd Schmitt , Roberto Dinapoli
IPC: G01J1/44 , H04N25/772
CPC classification number: G01J1/44 , H04N25/772 , G01J2001/442
Abstract: A system counts photon interactions in an array of photosensitive diodes and addresses the issue of improving position resolution. Every photo-detector diode of the array is connected to a readout unit cell containing a high-gain charge-to-voltage amplifier, a shaper, at least two comparators with independent thresholds and at least one interpixel communication logic, receiving as input signals from comparator outputs of the same readout unit cell and of the neighboring readout unit cells. This logic is then connected to at least one counter, each counter followed by a counter readout. By means of the digital interpixel communication logic and the set of comparators with different thresholds in every readout unit cell, it is possible to determine the photon hit position in the detector with a higher position resolution than the physical photo-detector size including the removal of the corner effect in pixel detectors.
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公开(公告)号:US20230384154A1
公开(公告)日:2023-11-30
申请号:US18031985
申请日:2021-10-08
Applicant: KT CORPORATION
Inventor: Min Soo LEE , Jeonghwan SHIN , Kyung-Woon LEE
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/442 , H04B10/70
Abstract: Provided are a single photon detector and an operation method thereof. The single photon detector may include a gate signal generator for generating a gate signal having a first pulse width (ΔP) with respect to a first time point (t1); and a first photon detector for detecting the single photon while operating in a Geiger mode by receiving the gate signal, and outputs a photon detection signal at a second time point (t2), wherein the first photon detector outputs the photon detection signal at the second time point (t2) spaced apart at a predetermine time interval (ΔT) from the first time point (t1).
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公开(公告)号:US20230375399A1
公开(公告)日:2023-11-23
申请号:US18026308
申请日:2021-09-16
Applicant: Omar MAGANA-LOAIZA , Chenglong YOU
Inventor: Omar MAGANA-LOAIZA , Chenglong YOU
CPC classification number: G01J1/0238 , G01J1/0271 , G01J1/44 , G06N3/04 , G01J2001/442 , G01J2001/448
Abstract: A method and system for identification of light source types includes detecting individual photons for a measurement time period to provide a times series of individual photon events, segmenting the time series into a plurality of time bins, and determining a number of detected photons within each time bin to provide a time series of photon counts, determining a probability distribution P(n) from the time series of photon counts, the probability distribution providing the probability of detection of n photons (n=0 . . . nmax), inputting each of the values of P(n) as a nmax+1 component feature vector into a single neuron neural network that has been previously trained on a plurality of light source types, and receiving as output a classifier that has a value that identifies the light source type. An average number of photons in the plurality of time bins is less than one photon.
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公开(公告)号:US11817464B2
公开(公告)日:2023-11-14
申请号:US16992758
申请日:2020-08-13
Applicant: CANON KABUSHIKI KAISHA
Inventor: Junji Iwata
IPC: H01L27/144 , H01L31/02 , H01L31/0224 , H01L31/107 , G01S17/08 , G01J1/44 , G01S17/931
CPC classification number: H01L27/1446 , G01J1/44 , G01S17/08 , G01S17/931 , H01L31/02027 , H01L31/022408 , H01L31/107 , G01J2001/442 , G01J2001/4466
Abstract: A photoelectric conversion apparatus includes a semiconductor substrate, a plurality of avalanche diodes formed within the semiconductor substrate, the plurality of avalanche diodes including a first avalanche diode and a second avalanche diode, and a trench structure formed between the first avalanche diode and the second avalanche diode in a plan view. Each of the avalanche diodes includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. A contact plug for supplying a potential to the second semiconductor region of the first avalanche diode is formed, and the contact plug is provided at a position where the contact plug overlaps with the trench structure in a plan view.
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