公开(公告)号：US20170092834A1

公开(公告)日：2017-03-30

申请号：US15279008

申请日：2016-09-28

Applicant: RAYTHEON BBN TECHNOLOGIES CORP.

Inventor： Kin Chung Fong ,  Thomas A. Ohki

IPC: H01L39/22 ,  G01J1/44

CPC classification number: H01L39/223 ,  G01J1/42 ,  G01J1/44 ,  G01J5/20 ,  G01J2001/442 ,  G01J2001/4446 ,  H01L29/1606

Abstract: A detector for detecting single photons of infrared radiation or longer wavelength electromagnetic radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In other embodiments a transmission line or antenna is coupled to the graphene sheet and guides longer-wavelength photons to the graphene sheet. A photon absorbed by the graphene sheet heats the graphene sheet. Part of the graphene sheet is part of the Josephson junction as the weak link, and a constant bias current is driven through the Josephson junction; an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

公开(公告)号：US09548402B2

公开(公告)日：2017-01-17

申请号：US14563105

申请日：2014-12-08

Applicant: Oxford Instruments Analytical Oy

Inventor： Veikko Kämäräinen

IPC: G01T1/24 ,  H01J37/244 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/024 ,  G01J1/44 ,  H01L31/18

CPC classification number: H01L31/02002 ,  G01J1/44 ,  G01J2001/4446 ,  G01T1/24 ,  H01J37/244 ,  H01J2237/2442 ,  H01L31/0203 ,  H01L31/024 ,  H01L31/18

Abstract: A semiconductor radiation detector comprises a detector chip having a front side and a back side, and a support plate on the back side of the detector chip, having electric connections with said detector chip. A base plate has a thermoelectric cooler attached to it and contact pins protruding from the base plate towards said detector chip. A bonding plate is on an opposite side of said thermoelectric cooler than said base plate, and first wire bonded connections go between said contact pins and said bonding plate. A joint plate is between said bonding plate and said support plate, and electric connections between said support plate and said bonding plate go through said joint plate.

Abstract translation: 半导体辐射检测器包括具有前侧和后侧的检测器芯片和在检测器芯片的背侧上的与所述检测器芯片电连接的支撑板。 基板具有附接到其上的热电冷却器和从基板向所述检测器芯片突出的接触销。 接合板位于所述热电冷却器的与所述基板相反的一侧，并且第一线接合连接位于所述接触销和所述接合板之间。 接合板在所述接合板和所述支撑板之间，并且所述支撑板和所述接合板之间的电连接通过所述接合板。

公开(公告)号：US20160372622A1

公开(公告)日：2016-12-22

申请号：US15242381

申请日：2016-08-19

Applicant: RAYTHEON BBN TECHNOLOGIES CORP.

Inventor： Kin Chung Fong ,  Thomas A. Ohki

IPC: H01L31/109 ,  H01L39/22 ,  H01L31/0304 ,  G01J1/44

CPC classification number: H01L31/109 ,  G01J1/42 ,  G01J1/4257 ,  G01J1/44 ,  G01J5/20 ,  G01J2001/442 ,  G01J2001/4446 ,  H01L29/1606 ,  H01L31/03044 ,  H01L39/223

Abstract: A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be adjacent a graphene sheet and configured so that evanescent waves from the waveguide overlap the graphene sheet. In some embodiments the waveguide is omitted and infrared light propagating in free space illuminates the graphene sheet directly. A photon absorbed by the graphene sheet from the evanescent waves heats the graphene sheet. The graphene sheet is coupled to the weak link of a Josephson junction, and a constant bias current is driven through the Josephson junction, so that an increase in the temperature of the graphene sheet results in a decrease in the critical current of the Josephson junction and a voltage pulse in the voltage across the Josephson junction. The voltage pulse is detected by the pulse detector.

Abstract translation: 用于检测单个光子的红外辐射的检测器。 在一个实施例中，配置成透射红外辐射的波导被布置成与石墨烯片相邻并且被配置为使得来自波导的消逝波与石墨烯片重叠。 在一些实施例中，波导被省略，并且在自由空间中传播的红外光直接照射石墨烯片。 石墨烯片从ev逝波吸收的光子加热石墨烯片。 石墨烯片被耦合到约瑟夫逊结的弱连接处，并且通过约瑟夫逊结驱动恒定的偏置电流，使得石墨烯片的温度升高导致约瑟夫逊结的临界电流的降低，并且 在约瑟夫逊结的电压中的电压脉冲。 电压脉冲由脉冲检测器检测。

公开(公告)号：US20160351744A1

公开(公告)日：2016-12-01

申请号：US15106996

申请日：2014-12-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： Ryota Sekiguchi ,  Toshihiko Ouchi

IPC: H01L31/112 ,  H01L31/108 ,  G01J1/44 ,  H01L27/146

CPC classification number: H01L31/1123 ,  G01J1/44 ,  G01J2001/4446 ,  G01N21/3581 ,  H01L27/0629 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14689 ,  H01L29/66143 ,  H01L29/872 ,  H01L31/1085 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.

Abstract translation: 半导体器件包括硅衬底和布置在硅衬底上的检测元件和p型和n型MOS晶体管，其中检测元件包括半导体层，电极和设置在其间的肖特基势垒，半导体 层位于具有与p型或n型MOS晶体管的源极或漏极中的杂质扩散层相同的组成和高度的层的正上方，硅衬底中具有相同组成的区域，以及 在硅衬底中刚好在p型MOS晶体管或n型MOS晶体管的栅极氧化膜的下方的沟道区的高度，或硅衬底中的具有相同组成和高度的区域 位于p型和n型MOS晶体管之间的场氧化物膜正下方的区域。

公开(公告)号：US20120305753A1

公开(公告)日：2012-12-06

申请号：US13511339

申请日：2010-11-24

Applicant: Heinz-Gunter Bach

Inventor： Heinz-Gunter Bach

IPC: G01J1/44 ,  H03F3/08

CPC classification number: H04B10/6911 ,  G01J1/44 ,  G01J2001/4446 ,  G01J2001/446 ,  H01L31/02 ,  H03F3/08 ,  H04B10/69

Abstract: A circuit sets an output potential at a radio frequency (RF) output of a pin photoreceiver that includes an ohmic terminal resistor connected between a supply voltage and the RF output. The circuit includes a control loop with an ohmic replication resistor having a resistance approximately equal to a resistance of the ohmic terminal resistor. The control loop further includes a sub-circuit configured to measure a voltage difference across the ohmic replication resistor and to reproduce the voltage difference as the supply voltage at an output terminal of the control loop.

Abstract translation: A电路在包括连接在电源电压和RF输出之间的欧姆端子电阻的针式光接收器的射频（RF）输出端设置输出电位。 该电路包括具有欧姆复制电阻器的控制回路，其电阻近似等于欧姆端电阻器的电阻。 该控制回路进一步包括一个子电路，其被配置为测量欧姆复制电阻器两端的电压差，并将电压差再现为控制回路输出端的电源电压。

公开(公告)号：US20090058502A1

公开(公告)日：2009-03-05

申请号：US12189301

申请日：2008-08-11

Applicant: Katsuhiko MOROSAWA

Inventor： Katsuhiko MOROSAWA

IPC: H01L31/00 ,  G09G3/36

CPC classification number: G01J1/32 ,  G01J1/44 ,  G01J2001/4446

Abstract: An optical sensor includes a photoelectric converter to receive external light and to output a photocurrent signal according to the illuminance of the external light. A current-to-voltage converter converts the photocurrent signal output from the photoelectric converter to a voltage signal. A voltage amplifier amplifies the voltage signal. A current amplifier outputs a current signal corresponding to the voltage signal amplified by the voltage amplifier. Each of the photoelectric converter, current-to-voltage converter, voltage amplifier and current amplifier includes at least one thin-film transistor.

Abstract translation: 光学传感器包括用于接收外部光并根据外部光的照度输出光电流信号的光电转换器。 电流 - 电压转换器将从光电转换器输出的光电流信号转换成电压信号。 电压放大器放大电压信号。 电流放大器输出对应于由电压放大器放大的电压信号的电流信号。 每个光电转换器，电流 - 电压转换器，电压放大器和电流放大器包括至少一个薄膜晶体管。