公开(公告)号：US20090289555A1

公开(公告)日：2009-11-26

申请号：US11478406

申请日：2006-06-28

Applicant: Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

Inventor： Kai-Li Jiang ,  Peng Liu ,  Yang Wei ,  Liang Liu ,  Shou-Shan Fan

IPC: H01J1/14 ,  H05B41/14

CPC classification number: H01J1/14 ,  H01J1/15 ,  H01J1/20 ,  H01J1/304 ,  H01J2201/19 ,  H01J2201/196 ,  H01J2201/30449 ,  H01J2201/30469 ,  H01J2201/30496

Abstract: An exemplary electron emission device includes an electron emitter, an anode opposite to and spaced apart from the electron emitter, a first power supply circuit, and a second power supply circuit. The first power supply circuit is configured for electrically connecting the electron emitter and the anode with a power supply to generate an electric field between the electron emitter and the anode. The second power supply circuit is configured for electrically connecting the electron emitter with a power supply to supply a heating current for heating the electron emitter whereby electrons emit therefrom. Methods for generating an emission current with a relatively higher stability also are provided.

Abstract translation: 示例性的电子发射装置包括电子发射极，与电子发射极相对且间隔开的阳极，第一电源电路和第二电源电路。 第一电源电路被配置为用电源电连接电子发射器和阳极，以在电子发射器和阳极之间产生电场。 第二电源电路被配置为将电子发射器与电源电连接以提供用于加热电子发射器的加热电流，从而电子从其发射。 还提供了用于产生具有相对较高稳定性的发射电流的方法。

公开(公告)号：US20090224679A1

公开(公告)日：2009-09-10

申请号：US12042878

申请日：2008-03-05

Applicant: David H. Pan ,  Fa-Gung Fan ,  Joseph A. Swift ,  Dan A. Hays ,  Michael F. Zona

Inventor： David H. Pan ,  Fa-Gung Fan ,  Joseph A. Swift ,  Dan A. Hays ,  Michael F. Zona

IPC: H01J61/94

CPC classification number: H01J1/304 ,  H01J17/066 ,  H01J2201/3043 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2201/30488 ,  H01J2201/30496

Abstract: In accordance with the invention, there are electron emitters, charging devices, and methods of forming them. An electron emitter array can include a plurality of nanostructures, each of the plurality of nanostructures can include a first end and a second end, wherein the first end can be connected to a first electrode and the second end can be positioned to emit electrons, and wherein each of the plurality of nanostructures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, doped metal oxides, and ceramics. The electron emitter array can also include a second electrode in close proximity to the first electrode, wherein one or more of the plurality of nanostructures can emit electrons in a gas upon application of an electric field between the first electrode and the second electrode.

Abstract translation: 根据本发明，存在电子发射器，充电装置及其形成方法。 电子发射器阵列可以包括多个纳米结构，多个纳米结构中的每一个可以包括第一端和第二端，其中第一端可以连接到第一电极，并且第二端可以被定位成发射电子，以及 其中所述多个纳米结构中的每一个可以由抗氧化金属，掺杂金属，金属合金，金属氧化物，掺杂金属氧化物和陶瓷中的一种或多种形成。 电子发射器阵列还可以包括紧邻第一电极的第二电极，其中在第一电极和第二电极之间施加电场时，多个纳米结构中的一个或多个可以在气体中发射电子。

公开(公告)号：US20090146547A1

公开(公告)日：2009-06-11

申请号：US12180210

申请日：2008-07-25

Applicant: LI QIAN ,  LIANG LIU ,  SHOU-SHAN FAN

Inventor： LI QIAN ,  LIANG LIU ,  SHOU-SHAN FAN

IPC: H01J1/62 ,  H01J9/00

CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30484 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2203/0272

Abstract: A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.

Abstract translation: 场致发射源的制造方法包括：提供绝缘基板; 在绝缘基板的至少一部分上构图阴极层; 在阴极层上形成多个发射体; 在绝缘基板，阴极层和发射体上涂覆光致抗蚀剂层; 将光致抗蚀剂层的预定部分暴露于辐射，其中暴露部分对应于发射体; 在光致抗蚀剂层上形成网状结构; 并去除光致抗蚀剂层的暴露部分。 该方法可以容易地进行，并且实现了场电子发射源具有高的电子发射效率。