Abstract:
A field emission cathode device includes a substrate and a carbon nanotube structure. The substrate includes a first surface. The carbon nanotube structure defines a contact body and an emission body. The contact body is contacted to the first surface of substrate. The emission body is curved away from the first surface. The carbon nanotube structure includes a number of carbon nanotubes joined end to end from the contact body to the emission body to form a continuous structure.
Abstract:
The object of the present invention is to enable the optical axis of an electron beam of a field emission electron gun mounting thereon an electron gun composed of a fibrous carbon material to be adjusted easily. Moreover, it is also to obtain an electron beam whose energy spread is narrower than that of the electron gun. Further, it is also to provide a high resolution electron beam applied device mounting thereon the field emission electron gun. The means for achieving the objects of the present invention is in that the fibrous carbon material is coated with a material having a band gap, in the field emission electron gun including an electron source composed of a fibrous carbon material and an electrically conductive base material for supporting the fibrous carbon material, an extractor for field-emitting electrons, and an accelerator for accelerating the electrons. Moreover, it is also to apply the field emission electron gun to various kinds of electron beam applied devices.
Abstract:
A field emission electron source (10) includes a conductive base (12), a carbon nanotube (14), and a film of metal (16). The conductive base includes a top (122). One end (142) of the carbon nanotube is electrically connected with the top of the conductive base. The other end (144) of the carbon nanotube extends outwardly away from the top of the conductive base. The film of metal is formed on the nearly entire surface of the carbon nanotube and at least on the portion of the top of the conductive base proximate the carbon nanotube. A method for manufacturing the described field emission electron source is also provided.
Abstract:
In accordance with the invention, there are electron emitters, charging devices, and methods of forming them. An electron emitter array can include a plurality of nanostructures, each of the plurality of nanostructures can include a first end and a second end, wherein the first end can be connected to a first electrode and the second end can be positioned to emit electrons, and wherein each of the plurality of nanostructures can be formed of one or more of oxidation resistant metals, doped metals, metal alloys, metal oxides, doped metal oxides, and ceramics. The electron emitter array can also include a second electrode in close proximity to the first electrode, wherein one or more of the plurality of nanostructures can emit electrons in a gas upon application of an electric field between the first electrode and the second electrode.
Abstract:
An exemplary spin-polarized electron source includes a cathode, and a one-dimensional nanostructure made of a compound (e.g., group III-V) semiconductor with local polarized gap states. The one-dimensional nanostructure includes a first end portion electrically connected with the cathode and a second end portion located/directed away from the cathode. The second end portion of the one-dimensional nanostructure functions as a polarized electron emission tip and is configured (i.e., structured and arranged) for emitting a spin-polarized electron current/beam under an effect of selectably one of a magnetic field induction and a circularly polarized light beam excitation when a predetermined negative bias voltage is applied to the cathode. Furthermore, a spin-polarized scanning tunneling microscope incorporating such a spin-polarized electron source is also provided.
Abstract:
Disclosed herein are a composition that can be used in the preparation of an electron emitter, a method of making the foregoing composition and an article made, at least in part, from the foregoing composition.
Abstract:
An electromagnetic force field configured to protect designated assets against incoming objects, comprising a plurality of layers, wherein the layers are a member of a group consisting of a supercharged plasma window, a curtain of high-energy laser beams arranged in a lattice-like configuration, and a carbon nanotube (CNT) layer, wherein the laser beams are positioned at equal distance between each other and as such as to ensure that at least four laser beams are in the path of the smallest object, and wherein, the CNT layer comprises a plurality of CNT sheets.
Abstract:
An electromagnetic force field configured to protect designated assets against incoming objects, comprising a plurality of layers, wherein the layers are a member of a group consisting of a supercharged plasma window, a curtain of high-energy laser beams arranged in a lattice-like configuration, and a carbon nanotube (CNT) layer, wherein the laser beams are positioned at equal distance between each other and as such as to ensure that at least four laser beams are in the path of the smallest object, and wherein, the CNT layer comprises a plurality of CNT sheets.
Abstract:
An electron emission device and a method of manufacturing the same are provided. The electron emission device includes: i) a substrate including a metal tip; ii) carbon nano tubes that are positioned on the metal tip; and iii) a lithium layer that is positioned on the carbon nano tubes.
Abstract:
The present invention discloses a display device, a backlight module, and a first emitting light source. The light emitting light source includes first and second substrates arranged relatively with each other. A first electrode layer is formed on an internal side of the first substrate; and a second electrode layer is formed on an internal side of the second substrate. An light-emitting layer is arranged between the first and second transparent conductive layers, and formed over the first transparent conductive layer, wherein the light-emitting layer includes a quantum dot material. And wherein the second transparent conductive layer is used to emit electrons toward the light emitting layer so as to create illumination for being used in is backlight module. A quantum dot material is incorporated so as to increase the light emitting performance of the light emitting light source.