公开(公告)号：US20090166557A1

公开(公告)日：2009-07-02

申请号：US11338843

申请日：2006-01-25

Applicant: Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

Inventor： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

IPC: G21K5/10 ,  G01N23/00

CPC classification number: H01J37/073 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/0635 ,  H01J2237/24564 ,  H01J2237/2594

Abstract: The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.

Abstract translation: 本发明解决了由碳纳米管电子源的发射变化引起的样品表面的电荷不均匀性和发射特性的个体差异。 在充电控制处理期间，实时测量样品表面的电荷。 作为解决由电子照射密度不均匀引起的电荷不均匀的手段，照射样品和样品的电子相对于平均电子照射密度移动。 此外，测量流入样本的吸收电流和从样本和背散射电子发射的二次电子的数量作为用于实时监测样品表面的电荷的装置。

公开(公告)号：US07521676B2

公开(公告)日：2009-04-21

申请号：US11601723

申请日：2006-11-20

Applicant: Hirohito Okuda ,  Takashi Hiroi ,  Masaki Hasegawa ,  Shigeya Tanaka

Inventor： Hirohito Okuda ,  Takashi Hiroi ,  Masaki Hasegawa ,  Shigeya Tanaka

IPC: G01N23/225

CPC classification number: H01J37/026 ,  H01J37/292 ,  H01J2237/0048 ,  H01J2237/2817

Abstract: The present invention provides a mirror electron projection (MPJ) type (SEPJ type included) scanning electron beam apparatus that is capable of performing condition setup, and a method and apparatus for inspecting pattern defects with the scanning electron beam apparatus. A mirror electron projection type defect inspection apparatus, which comprises a charging device for emitting a charging electron beam, electron beam irradiation means for shedding a mirror electron projection electron beam onto an inspection region near which an electrical potential distribution is formed, detection means for detecting secondary electrons or reflected electrons generated from a surface and proximity of the specimen, and defect detection means for detecting a defect by processing a mirror image signal that is detected by the detection means, includes irradiation condition optimization means for optimizing charging electron beam irradiation conditions.

Abstract translation: 本发明提供一种能够进行条件建立的镜电子投射（MPJ）型（包括SEPJ型）扫描电子束装置，以及用扫描电子束装置检查图案缺陷的方法和装置。 镜电子投影型缺陷检查装置，其包括用于发射充电电子束的充电装置，用于将镜电子投影电子束切除到形成有电位分布的检查区域的电子束照射装置，用于检测 从检体的表面和邻近产生的二次电子或反射电子，以及用于通过处理由检测装置检测出的镜像信号来检测缺陷的缺陷检测装置，包括用于优化充电电子束照射条件的照射条件优化装置。

公开(公告)号：US20080056746A1

公开(公告)日：2008-03-06

申请号：US11847790

申请日：2007-08-30

Applicant: Hiroyuki SUHARA

Inventor： Hiroyuki SUHARA

IPC: G21K5/00 ,  G03G15/06

CPC classification number: G01R31/305 ,  G03G15/5037 ,  G03G2215/00033 ,  G03G2215/00054 ,  H01J37/244 ,  H01J37/268 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2444 ,  H01J2237/24564 ,  H01J2237/2594

Abstract: A surface-potential distribution measuring apparatus includes an electron gun, an electron-beam optical system, an electron-emission panel, a detector, and a control system. The electron-beam optical system is located between the electron gun and a sample, and focuses a beam of electrons emitted from the electron gun to the surface of the sample. The electron-emission panel is located near the sample to be collided with at least part of the electrons via the sample, and emits secondary electrons corresponding to the number of collided electrons. The detector detects at least part of the secondary electrons. The control system obtains potential distribution on the surface of the sample based on a detection result obtained by the detector.

Abstract translation: 表面电位分布测量装置包括电子枪，电子束光学系统，电子发射面板，检测器和控制系统。 电子束光学系统位于电子枪和样品之间，并将从电子枪发射的电子束聚焦到样品的表面。 电子发射面板位于样品附近，通过样品与至少部分电子碰撞，并发射对应于碰撞电子数的二次电子。 检测器检测至少部分二次电子。 控制系统根据检测器得到的检测结果，获得样品表面的电位分布。

公开(公告)号：US07335879B2

公开(公告)日：2008-02-26

申请号：US11203674

申请日：2005-08-12

Applicant: Zhong-Wei Chen

Inventor： Zhong-Wei Chen

IPC: G01N23/00

CPC classification number: H01J37/026 ,  G01R31/307 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/2817

Abstract: A system and method for characterizing and charging a sample. The system includes a vacuum chamber, a first apparatus in the vacuum chamber and configured to characterize a sample, and a second apparatus in the vacuum chamber and configured to charge the sample. The second apparatus includes an electron gun configured to provide an electron beam to the sample and including an emission cathode biased to a first voltage relative to a reference voltage, a sample holder configured to support the sample, and a mesh located between the electron gun and the sample holder. Additionally, the second apparatus includes a first voltage supply configured to bias the mesh to a second voltage relative to the sample holder, and a second voltage supply configured to bias the sample holder to a third voltage relative to the reference voltage.

Abstract translation: 用于表征和充电样品的系统和方法。 该系统包括真空室，真空室中的第一装置，并且构造成表征样品;以及第二装置，其被配置成对样品充电。 第二装置包括电子枪，其构造成向样品提供电子束，并且包括相对于参考电压偏置到第一电压的发射阴极，被配置为支撑样品的样品保持器，以及位于电子枪和 样品架。 另外，第二装置包括配置成相对于样品架保持器将网状物偏压到第二电压的第一电压源，以及配置为将样品架保持器相对于参考电压偏置到第三电压的第二电压源。

公开(公告)号：US07253410B1

公开(公告)日：2007-08-07

申请号：US11225917

申请日：2005-09-13

Applicant: Kirk J. Bertsche ,  John Greene

Inventor： Kirk J. Bertsche ,  John Greene

IPC: H01J37/244

CPC classification number: H01J37/026 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: One embodiment described relates to a method of electron beam imaging of a target area of a substrate. An electron beam column is configured for charge-control pre-scanning using a primary electron beam. A pre-scan is performed over the target area. The electron beam column is re-configured for imaging using the primary electron beam. An imaging scan is then performed over the target area. Other embodiments are also described.

Abstract translation: 所描述的一个实施例涉及对基板的目标区域进行电子束成像的方法。 电子束列被配置为使用一次电子束进行电荷控制预扫描。 在目标区域上执行预扫描。 电子束列被重新配置成使用一次电子束成像。 然后在目标区域上执行成像扫描。 还描述了其它实施例。

公开(公告)号：US20060038126A1

公开(公告)日：2006-02-23

申请号：US11203674

申请日：2005-08-12

Applicant: Zhong-Wei Chen

Inventor： Zhong-Wei Chen

IPC: G21K7/00

CPC classification number: H01J37/026 ,  G01R31/307 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/2817

Abstract: A system and method for characterizing and charging a sample. The system includes a vacuum chamber, a first apparatus in the vacuum chamber and configured to characterize a sample, and a second apparatus in the vacuum chamber and configured to charge the sample. The second apparatus includes an electron gun configured to provide an electron beam to the sample and including an emission cathode biased to a first voltage relative to a reference voltage, a sample holder configured to support the sample, and a mesh located between the electron gun and the sample holder. Additionally, the second apparatus includes a first voltage supply configured to bias the mesh to a second voltage relative to the sample holder, and a second voltage supply configured to bias the sample holder to a third voltage relative to the reference voltage.

Abstract translation: 用于表征和充电样品的系统和方法。 该系统包括真空室，真空室中的第一装置，并且构造成表征样品;以及第二装置，其被配置成对样品充电。 第二装置包括电子枪，其构造成向样品提供电子束，并且包括相对于参考电压偏置到第一电压的发射阴极，被配置为支撑样品的样品保持器，以及位于电子枪和 样品架。 另外，第二装置包括配置成相对于样品架保持器将网状物偏压到第二电压的第一电压源，以及配置为将样品架保持器相对于参考电压偏置到第三电压的第二电压源。

公开(公告)号：US06629508B2

公开(公告)日：2003-10-07

申请号：US09733211

申请日：2000-12-08

Applicant: Jerald P. Dykstra

Inventor： Jerald P. Dykstra

IPC: C23C1600

CPC classification number: H01J27/20 ,  H01J27/026 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/0812

Abstract: A neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam. The apparatus includes an electron source, and a circularly cylindrical ionizing region that is substantially free of magnetic fields. In one embodiment of the invention, the beam is a gas cluster beam, and the electron source includes a heated filament for emitting thermions, the filament including one or more direction reversals shaped to produce self-nulling magnetic fields so as to minimize the magnetic field due to filament heating current. In another embodiment of the invention, a neutral beam ionizing apparatus for electron impact ionization of a substantially cylindrical neutral beam includes at least one electron source, and an elliptically cylindrical ionizing region. In one embodiment, the elliptically cylindrical ionizing region includes a pair of co-focal elliptically cylindrical electrodes biased so as to cause electrons emitted from the at least one electron source to orbit repeatedly through the axis of the beam to be ionized.

公开(公告)号：US20020047093A1

公开(公告)日：2002-04-25

申请号：US09983416

申请日：2001-10-24

Inventor： Ki-Jung Son ,  Yong-Hyeon Kim

IPC: G21K007/00 ,  G01N023/00

CPC classification number: G01N23/04 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/2806 ,  H01J2237/2809

Abstract: A method of capturing scanning electron microscope (SEM) images of a sample, such as a photo mask, and a scanning electron microscope (SEM) apparatus capable of executing the method are provided. The method of capturing SEM images includes steps of intentionally electrically charging the surface of the sample, and subsequently scanning the charged surface of the sample with a primary electron beam. An ionizer or an electron gun may be used to charge the surface of the sample. Once the surface is charged to a predetermined level, the charges (ions or electrons) distribute themselves uniformly on the surface of the sample. Thus, the primary electrons will not be deflected by electrical attraction or repulsion as the electrons near the surface of the sample. Accordingly, the present invention facilitates the initial focusing of the primary electron beam on a desired spot on the sample, and reduces the number of occurrences and durations of pattern shifting phenomena.

Abstract translation: 提供了能够执行该方法的诸如光掩模等样品的扫描电子显微镜（SEM）图像的扫描电子显微镜（SEM）装置的方法。 捕获SEM图像的方法包括有意地对样品的表面充电，随后用一次电子束扫描样品的带电表面的步骤。 可以使用电离器或电子枪对样品的表面充电。 一旦表面充电到一个预定的水平，电荷（离子或电子）就会在样品表面上均匀分布。 因此，作为样品表面附近的电子，初级电子不会被电吸引或排斥所偏转。 因此，本发明有助于初级电子束在样品上的所需点上的初始聚焦，并且减少了图案偏移现象的出现次数和持续时间。

公开(公告)号：US06232787B1

公开(公告)日：2001-05-15

申请号：US09226962

申请日：1999-01-08

Applicant: Chiwoei Wayne Lo ,  Pierre Perez

Inventor： Chiwoei Wayne Lo ,  Pierre Perez

IPC: G01R3128

CPC classification number: H01J37/268 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/281 ,  H01J2237/2817

Abstract: Methods of inspecting a microstructure comprise: applying charged particles to the wafer to negatively charge up the wafer over a region having contact or via holes, scanning a charged-particle beam over the region while detecting secondary particles so as to produce a detector signal, determining from the detector signal an apparent dimension of a contact hole, and comparing the apparent dimension of the contact hole with reference information to identify a defect. The reference information can be a conventional voltage-contrast image or can be design data indicating expected physical size of the contact hole and expected electrical connectivity of material within or beneath the contact hole. The wafer can be charged up by directing a flood of electrons toward a surface of the wafer and/or by controlling potential of an energy filter so as to direct secondary electrons back to the wafer while directing a charged-particle beam at the wafer. Other methods of inspecting a microstructure comprise charging up a microstructure, interrogating the microstructure with a charged-particle beam to obtain apparent dimensional information for a feature of the microstructure, and comparing the apparent dimensional information with reference information about the microstructure to identify a defect. Apparatus for inspecting semiconductor wafers and other microstructures are also disclosed, as are computer program products comprising a computer usable media having computer-readable program code embodied therein for controlling a charged-particle-beam system for inspecting a microstructure.

Abstract translation: 检查微结构的方法包括：将带电粒子施加到晶片上以在具有接触孔或通孔的区域上对晶片负电荷，在检测次级粒子的同时扫描带电粒子束，以产生检测器信号，确定 从检测器信号检测接触孔的表观尺寸，并将接触孔的表观尺寸与参考信息进行比较以识别缺陷。 参考信息可以是传统的电压对比图像，或者可以是指示接触孔的预期物理尺寸和接触孔内或下的材料的预期电连接性的设计数据。 可以通过将大量电子引向晶片的表面和/或通过控制能量滤波器的电位来使晶片充电，以便将二次电子引导回到晶片，同时将带电粒子束引导到晶片。 检查微结构的其他方法包括充电微结构，用带电粒子束询问微结构以获得用于微结构特征的表观尺寸信息，并将表观尺寸信息与关于微结构的参考信息进行比较以识别缺陷。 还公开了用于检查半导体晶片和其它微结构的装置，以及计算机程序产品，包括其中包含计算机可读程序代码的计算机可用介质，用于控制用于检查微结构的带电粒子束系统。

公开(公告)号：US20230360877A1

公开(公告)日：2023-11-09

申请号：US18144821

申请日：2023-05-08

Applicant: ASML Netherlands B.V.

Inventor： Xuedong LIU ,  Qingpo XI ,  Youfei JIANG ,  Weiming REN ,  Xuerang HU ,  Zhongwei CHEN

IPC: H01J37/28 ,  H01J37/12

CPC classification number: H01J37/12 ,  H01J37/28 ,  H01J2237/0048

Abstract: Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.