公开(公告)号：US20230411112A1

公开(公告)日：2023-12-21

申请号：US18201536

申请日：2023-05-24

Applicant: Integrated Dynamic Electron Solutions, Inc.

Inventor： Ruth Shewmon BLOOM ,  Bryan Walter REED ,  Daniel Joseph MASIEL ,  Sang Tae PARK

IPC: H01J37/24 ,  H01J37/29 ,  H01J37/28 ,  H01J37/147

CPC classification number: H01J37/243 ,  H01J37/292 ,  H01J37/28 ,  H01J37/147

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

公开(公告)号：US11728128B2

公开(公告)日：2023-08-15

申请号：US17825261

申请日：2022-05-26

Applicant: Integrated Dynamic Electron Solutions, Inc.

Inventor： Ruth Shewmon Bloom ,  Bryan Walter Reed ,  Daniel Joseph Masiel ,  Sang Tae Park

IPC: H01J37/24 ,  H01J37/29 ,  H01J37/28 ,  H01J37/147

CPC classification number: H01J37/243 ,  H01J37/147 ,  H01J37/28 ,  H01J37/292

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

公开(公告)号：US20230178333A1

公开(公告)日：2023-06-08

申请号：US18073691

申请日：2022-12-02

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Bruno Linn

IPC: H01J37/29 ,  H01J37/18 ,  H01J37/20 ,  H01J37/141

CPC classification number: H01J37/292 ,  H01J37/18 ,  H01J37/20 ,  H01J37/141 ,  H01J2237/2813 ,  H01J2237/2002

Abstract: An analysis system, an analysis method and a sample holder make it possible to analyse a battery via a particle beam system, for example to record images of the battery via the particle beam system, while the battery is arranged in a vacuum chamber of the particle beam system and is manipulated according to a multiplicity of different parameter value sets in the vacuum chamber. By way of example, the battery is kept at a predefined temperature, a predefined pressure is exerted on the battery, and the battery is electrically charged and discharged according to a loading scheme and at the same time images of the battery are recorded via the particle beam system.

公开(公告)号：US20170154756A1

公开(公告)日：2017-06-01

申请号：US15365145

申请日：2016-11-30

Applicant: Hermes Microvision Inc.

Inventor： Weiming Ren ,  Xuedong Liu ,  Xuerang Hu ,  Zhongwei Chen

IPC: H01J37/28 ,  H01J37/14 ,  H01J37/153 ,  H01J37/244 ,  H01J37/20

CPC classification number: H01J37/28 ,  H01J37/14 ,  H01J37/141 ,  H01J37/153 ,  H01J37/20 ,  H01J37/244 ,  H01J37/292 ,  H01J2237/0453 ,  H01J2237/1532 ,  H01J2237/24465 ,  H01J2237/24592 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.

公开(公告)号：US09347896B2

公开(公告)日：2016-05-24

申请号：US14475046

申请日：2014-09-02

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin Man ,  Tatsuya Asahata ,  Atsushi Uemoto

IPC: G01N23/225 ,  H01J37/28 ,  H01J37/305 ,  G01N23/22 ,  G01N23/20 ,  G01N1/32

CPC classification number: H01J37/222 ,  G01N1/32 ,  G01N23/20091 ,  G01N23/2202 ,  G01N23/2251 ,  G01N2223/418 ,  H01J37/28 ,  H01J37/292 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/2811 ,  H01J2237/31749

Abstract: A cross-section processing-and-observation method, including a cross-section exposure step in which a sample is irradiated with a focused ion beam to expose a cross-section of the sample, and a cross-sectional image acquisition step in which the cross-section is irradiated with an electron beam to acquire a cross-sectional image of the cross-section. The cross-section exposure step and the cross-sectional image acquisition step are repeatedly performed along a predetermined direction of the sample at a setting interval to acquire multiple cross-sectional images of the sample. The method also includes a specific observation target detection step in which a predetermined specific observation target from the cross-sectional image acquired a the cross-sectional image acquisition step is detected. In the specific observation target detection step, after a predetermined specific observation target is detected, the setting interval of the cross-section exposure step is set to be shorter than that before the specific observation target is detected.

Abstract translation: 一种截面处理和观察方法，包括横截面曝光步骤，其中用聚焦离子束照射样品以暴露样品的横截面;以及横截面图像获取步骤，其中， 横截面用电子束照射以获得横截面的横截面图像。 横截面曝光步骤和横截面图像获取步骤沿着样品的预定方向以设定间隔重复进行，以获得样品的多个横截面图像。 该方法还包括特定观察目标检测步骤，其中检测到获取截面图像的横截面图像中的预定特定观察目标。 在特定观察目标检测步骤中，在检测到预定的特定观察目标之后，将横截面曝光步骤的设定间隔设定为短于检测出特定观察对象之前的设定间隔。

公开(公告)号：US08766182B2

公开(公告)日：2014-07-01

申请号：US13924213

申请日：2013-06-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Minoru Yamazaki ,  Akira Ikegami ,  Hideyuki Kazumi ,  Osamu Nasu

IPC: H01J37/26

CPC classification number: G01N23/2251 ,  G01R29/24 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/221 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594

Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.

Abstract translation: 本发明的目的是提供一种方法和装置，用于使用带电粒子束测量样品表面上的电位，同时抑制由带电粒子束施加引起的样品上的电位变化，或检测补偿 用于由样品带电引起的装置的状况改变的值。 为了实现上述目的，本发明提供了一种向样品施加电压使得带电粒子束不能到达样品的方法和装置（以下称为“镜像状态”），其中 将带电粒子束施加到样品的状态，以及使用通过该电压施加获得的信号检测与样品上的电位有关的信息。

公开(公告)号：US20090272899A1

公开(公告)日：2009-11-05

申请号：US11958625

申请日：2007-12-18

Applicant: Minoru YAMAZAKI ,  Akira Ikegami ,  Hideyuki Kazumi ,  Osamu Nasu

Inventor： Minoru YAMAZAKI ,  Akira Ikegami ,  Hideyuki Kazumi ,  Osamu Nasu

IPC: G01N23/00

CPC classification number: G01N23/2251 ,  G01R29/24 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/221 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594

Abstract: An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.

Abstract translation: 本发明的目的是提供一种方法和装置，用于使用带电粒子束测量样品表面上的电位，同时抑制由带电粒子束施加引起的样品上的电位变化，或检测补偿 用于由样品带电引起的装置的状况改变的值。 为了实现上述目的，本发明提供了一种向样品施加电压使得带电粒子束不能到达样品的方法和装置（以下称为“镜像状态”），其中 将带电粒子束施加到样品的状态，以及使用通过该电压施加获得的信号检测与样品上的电位有关的信息。

公开(公告)号：US07075076B2

公开(公告)日：2006-07-11

申请号：US10885725

申请日：2004-07-08

Applicant: Hiroshi Makino ,  Hisaya Murakoshi ,  Hiroyuki Shinada ,  Hideo Todokoro

Inventor： Hiroshi Makino ,  Hisaya Murakoshi ,  Hiroyuki Shinada ,  Hideo Todokoro

IPC: H01J37/301

CPC classification number: H01J37/292 ,  G01N23/04 ,  H01J2237/2817

Abstract: The present invention relates to an inspection apparatus comprising: an electron emitting unit for sequentially emitting an electron beam in the direction of the inspection area of a sample; a decelerating means for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the electron beam, which has been drawn back in the vicinity of the inspection area, on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition and an image processing unit for comparing the images on different image forming conditions with one another to thereby detect a defect in the inspection area.

Abstract translation: 本发明涉及一种检查装置，包括：电子发射单元，用于沿样本的检查区域的方向依次发射电子束; 用于在检查区域附近拉回电子束的减速装置; 用于在多个不同的图像形成条件下形成已经被拉回到检查区域附近的电子束的图像的成像单元; 用于捕获形成与每个图像形成条件相对应的图像的电子束的图像检测单元和用于将不同图像形成条件上的图像彼此进行比较的图像处理单元，从而检测检查区域中的缺陷。

公开(公告)号：US12080514B2

公开(公告)日：2024-09-03

申请号：US18201536

申请日：2023-05-24

Applicant: Integrated Dynamic Electron Solutions, Inc.

Inventor： Ruth Shewmon Bloom ,  Bryan Walter Reed ,  Daniel Joseph Masiel ,  Sang Tae Park

IPC: H01J37/24 ,  H01J37/147 ,  H01J37/28 ,  H01J37/29

CPC classification number: H01J37/243 ,  H01J37/147 ,  H01J37/28 ,  H01J37/292

Abstract: A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

公开(公告)号：US20180012725A1

公开(公告)日：2018-01-11

申请号：US15545550

申请日：2015-01-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Toshiyuki YOKOSUKA ,  Hideyuki KAZUMI ,  Yuzuru MIZUHARA ,  Hajime KAWANO

IPC: H01J37/05 ,  H01J37/29 ,  H01J37/26

CPC classification number: H01J37/05 ,  H01J37/265 ,  H01J37/28 ,  H01J37/292 ,  H01J2237/24592 ,  H01J2237/2487 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: Provided is a charged particle beam device that enables, even if a visual field includes therein a plurality of regions having different secondary electron emission conditions, the setting of appropriate energy filter conditions adapted to each of these regions. The charged particle beam device is equipped with a detector for detecting charged particles obtained on the basis of scanning, over a sample, a charged particle beam emitted from a charged particle source, and an energy filter for filtering by energy the charged particles emitted from the sample. Index values are determined for the plurality of regions contained within the scanning region of the charged particle beam, and, for each of a plurality of energy filter conditions, differences are calculated between the plurality of index values and the reference index values that have been set for each of the plurality of regions.