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    Planar microshells for vacuum encapsulated devices and damascene method of manufacture
    51.
    发明授权
    Planar microshells for vacuum encapsulated devices and damascene method of manufacture 有权
    用于真空封装装置的平面微壳和大马士革制造方法

    公开(公告)号：US08313970B2

    公开(公告)日：2012-11-20

    申请号：US13017892

    申请日：2011-01-31

    Applicant: Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    Inventor： Emmanuel P. Quevy ,  Pezhman Monadgemi ,  Roger T. Howe

    IPC: H01L21/00

    CPC classification number: B81C1/00293 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0721 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: Low temperature, multi-layered, planar microshells for encapsulation of devices such as MEMS and microelectronics. The microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. In an embodiment, the pre-sealing layer has perforations formed with a damascene process to be self-aligned to the chamber below the microshell. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. In a particular embodiment, the hermetic layer is a metal which is electrically coupled to a conductive layer adjacent to the microshell to electrically ground the microshell.

    Abstract translation: 用于MEMS和微电子等器件封装的低温多层平面微型壳体。 微壳包括平面穿孔的预密封层，在其下面接近非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 在一个实施例中，预密封层具有形成有镶嵌工艺的穿孔，以与微壳下方的腔室自对准。 密封层可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方具有密封层以密封穿孔。 在特定实施例中，密封层是金属，其电耦合到与微壳相邻的导电层，以电微接地微壳。

    Strained semiconductor materials, devices and methods therefore
    52.
    发明申请
    Strained semiconductor materials, devices and methods therefore 失效
    因此，应变半导体材料，器件和方法

    公开(公告)号：US20100207254A1

    公开(公告)日：2010-08-19

    申请号：US12706112

    申请日：2010-02-16

    Applicant: Jinendra Raja Jain ,  Roger T. Howe

    Inventor： Jinendra Raja Jain ,  Roger T. Howe

    IPC: H01L29/06 ,  H01L21/30

    CPC classification number: H01L31/105 ,  H01L33/34

    Abstract: Various applications are directed to a material stack having a strained active material therein. In connection with an embodiment, an active material (e.g. a semiconductor material) is at least initially and partially released from and suspended over a substrate, strained, and held in place. The release and suspension facilitates the application of strain to the semiconductor material.

    Abstract translation: 各种应用涉及其中具有应变活性材料的材料堆叠。 结合一个实施例，活性材料（例如半导体材料）至少首先和部分地从衬底上释放并悬浮在衬底上，应变并保持就位。 释放和悬浮有助于将应变应用于半导体材料。

    Thin film microshells incorporating a getter layer
    53.
    发明授权
    Thin film microshells incorporating a getter layer 失效
    包含吸气剂层的薄膜微壳

    公开(公告)号：US07736929B1

    公开(公告)日：2010-06-15

    申请号：US11716422

    申请日：2007-03-09

    Applicant: Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

    Inventor： Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

    IPC: H01L21/00 ,  H01L21/461 ,  H01L21/50 ,  C23F1/00 ,  C25F3/00

    CPC classification number: B81B7/0038 ,  B81C2203/0136 ,  B81C2203/0145

    Abstract: Low temperature, multi-layered microshells for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The pre-sealing layer includes a large surface area getter layer to remove contaminants from the space ultimately enclosed by the microshell to improve the pressure control and cleanliness of the microshell.

    Abstract translation: 用于封装MEMS和微电子等器件的低温多层微型壳体。 微壳可以包括穿孔的预密封层，在其下方存取牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 预密封层包括大的表面积吸气剂层，以从最终由微壳包围的空间去除污染物，以改善微壳的压力控制和清洁度。

    Internal electrostatic transduction structures for bulk-mode micromechanical resonators
    54.
    发明授权
    Internal electrostatic transduction structures for bulk-mode micromechanical resonators 有权
    用于体模式微机械谐振器的内部静电转换结构

    公开(公告)号：US07522019B2

    公开(公告)日：2009-04-21

    申请号：US11146303

    申请日：2005-06-03

    Applicant: Sunil A. Bhave ,  Roger T. Howe

    Inventor： Sunil A. Bhave ,  Roger T. Howe

    IPC: H03H9/00 ,  H03H9/125

    CPC classification number: H03H9/2405 ,  H03H9/02259 ,  H03H2009/02496 ,  H03H2009/02511

    Abstract: An electrostatic transducer for micromechanical resonators, in which the electrode gaps are filled with a dielectric material having a much higher permittivity than air. This internal electrostatic transducer has several advantages over both air-gap electrostatic and piezoelectric transduction; including lower motional impedance, compatibility with advanced scaled CMOS device technology, and extended dynamic range. In one aspect, in order to minimize energy losses, the dielectric material has an acoustic velocity which is matched to that of the resonator material. Internal electrostatic transduction can be adapted to excite and detect either vertical modes (perpendicular to the substrate) or lateral modes (in the plane of the substrate). Its increased transduction efficiency is of particular importance for reducing the motional resistance of the latter.

    Abstract translation: 一种用于微机械谐振器的静电传感器，其中电极间隙填充有比空气高得多的介电常数的电介质材料。 这种内部静电传感器具有优于气隙静电和压电传导的几个优点; 包括较低的运动阻抗，与先进的CMOS设备技术的兼容性以及扩展的动态范围。 在一个方面，为了最小化能量损失，电介质材料具有与谐振器材料的声速匹配的声速。 内部静电转换可以适应于激发和检测垂直模式（垂直于衬底）或横向模式（在衬底的平面中）。 其增加的转导效率对于降低后者的运动阻力尤其重要。

    Selective etching of silicon carbide films
    55.
    发明授权
    Selective etching of silicon carbide films 有权
    选择性蚀刻碳化硅膜

    公开(公告)号：US07151277B2

    公开(公告)日：2006-12-19

    申请号：US10613508

    申请日：2003-07-03

    Applicant: Di Gao ,  Roger T. Howe ,  Roya Maboudian

    Inventor： Di Gao ,  Roger T. Howe ,  Roya Maboudian

    IPC: H01L29/04 ,  H01L29/76 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC classification number: H01L21/0475 ,  B81C1/00595 ,  B81C2201/0109 ,  B81C2201/0132

    Abstract: A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

    Abstract translation: 使用非金属掩模层蚀刻碳化硅的方法。 该方法包括提供碳化硅衬底; 通过在衬底上施加一层材料形成非金属掩模层; 图案化掩模层以暴露衬底的下面的区域; 并以等于第一速率蚀刻衬底的下面的区域，同时以低于第一速率的速率蚀刻掩模层。

    Micro-machined angle-measuring gyroscope
    56.
    发明授权
    Micro-machined angle-measuring gyroscope 有权
    微加工角度测量陀螺仪

    公开(公告)号：US06481285B1

    公开(公告)日：2002-11-19

    申请号：US09556023

    申请日：2000-04-20

    Applicant: Andrei M. Shkel ,  Roger T. Howe

    Inventor： Andrei M. Shkel ,  Roger T. Howe

    IPC: G01P904

    CPC classification number: G01C19/5719

    Abstract: A micro-machined angle measurement gyroscope. In one implementation, the gyroscope includes a substrate; a proof mass coupled to the substrate by an isotropic suspension such that the proof mass can move in any direction in the plane of the substrate; a plurality of drive electrodes configured to cause the proof mass to oscillate in the plane of the substrate; and a plurality of sense electrodes configured to sense the motion of the proof mass in the plane of the substrate. In another implementation, the gyroscope includes a substrate; a proof mass suspended above the substrate by an isotropic suspension such that the proof mass can move in any direction in an oscillation plane normal to the substrate; a plurality of drive electrodes configured to cause the proof mass to oscillate in the oscillation plane; and a plurality of sense electrodes configured to sense the motion of the proof mass in the oscillation plane.

    Abstract translation: 微加工角度测量陀螺仪。 在一个实施方式中，陀螺仪包括基板; 通过各向同性悬浮液与基板相连的检测质量块，使得检测质量块能够在基板的平面中的任何方向上移动; 多个驱动电极，其构造成使得所述检测质量在所述基板的平面中振荡; 以及多个感测电极，其被配置为感测所述基板的平面中的所述检验质量块的运动。 在另一实施方式中，陀螺仪包括基板; 通过各向同性悬浮液悬挂在衬底上方的校准物质，使得校准物质可以在垂直于衬底的振荡平面中的任何方向上移动; 多个驱动电极，其构造成使得所述检测质量在所述振荡平面中振荡; 以及多个感测电极，被配置为感测所述振动平面中的所述质量块的运动。

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