公开(公告)号：US20190172705A1

公开(公告)日：2019-06-06

申请号：US16268260

申请日：2019-02-05

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/455 ,  C23C16/30 ,  H01L21/311 ,  H01L21/033

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20180010247A1

公开(公告)日：2018-01-11

申请号：US15205827

申请日：2016-07-08

Applicant: ASM IP Holding B.V.

Inventor： Antti Juhani Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/04 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45553

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US20170140926A1

公开(公告)日：2017-05-18

申请号：US15384028

申请日：2016-12-19

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  C23C16/30 ,  H01L21/311 ,  C23C16/455

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20170107621A1

公开(公告)日：2017-04-20

申请号：US14884695

申请日：2015-10-15

Applicant: ASM IP Holding B.V.

Inventor： Hidemi Suemori

IPC: C23C16/50 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/50 ,  C23C16/045 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45561 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32082 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD) includes depositing a dielectric film in a trench of a substrate by PEALD under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —N(CH3)2 as a functional group.

公开(公告)号：US20170032956A1

公开(公告)日：2017-02-02

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/04 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法。 在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20170029947A1

公开(公告)日：2017-02-02

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供用于沉积薄膜的装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US09540729B1

公开(公告)日：2017-01-10

申请号：US14835456

申请日：2015-08-25

Applicant: ASM IP Holding B.V.

Inventor： Seiji Okura ,  Hidemi Suemori ,  Viljami J. Pore

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/28 ,  H01L49/02 ,  C23C16/40

CPC classification number: C23C16/45529 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45538 ,  H01L21/02172 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/31144 ,  H01L28/75

Abstract: Processes are provided for depositing titanium nanolaminate thin films that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. In some embodiments a titanium nanolaminate film comprising titanium oxide layers and titanium nitride layers is deposited on a three-dimensional feature, such as an existing mask feature. The conformal titanium nanolaminate film may be directionally etched so that only the titanium nanolaminate deposited or formed on the sidewalls of the existing three-dimensional feature remains. The three-dimensional feature is then removed via an etching process, leaving the pitch doubled titanium nanolaminate film.

Abstract translation: 提供了用于沉积可用于例如集成电路制造中的钛纳米级氨酸盐薄膜的方法，例如在间距倍增过程中形成间隔物。 在一些实施方案中，包含氧化钛层和氮化钛层的钛纳米层合膜被沉积在诸如现有掩模特征的三维特征上。 可以对保形的钛纳米膜进行定向蚀刻，使得仅保留沉积或形成在现有三维特征的侧壁上的钛纳米层状钛。 然后通过蚀刻工艺去除三维特征，留下螺距倍增的钛纳米质膜。