Abstract:
An extreme ultraviolet light generation device may comprise: a chamber provided with a through-hole; an introduction optical system configured to introduce the pulse laser beam into a first predetermined region inside the chamber through the through-hole; a target supply device configured to output the target toward the first predetermined region; a light source configured to irradiate a second predetermined region with light whose optical path in the second predetermined region has a transverse section that is longer along a direction perpendicular to a direction of movement of the target than along the direction of movement of the target, the second predetermined region including part of a trajectory of the target between the target supply device and the first predetermined region; and an optical sensor configured to detect light incident on the optical sensor from the second predetermined region to detect the target passing through the second predetermined region.
Abstract:
An apparatus for generating extreme ultraviolet light may include a reference member, a chamber fixed to the reference member, the chamber including at least one window, a laser beam introduction optical system configured to introduce an externally supplied laser beam into the chamber through the at least one window, and a positioning mechanism configured to position the laser beam introduction optical system to the reference member.
Abstract:
A laser beam amplifier with high optical axis stability is provided. The laser beam amplifier includes: a container for accommodating a laser medium; a pair of electrodes for performing discharge in the laser medium to form an amplification region for a laser beam in the laser medium; and an optical system for forming an optical path between a first point, upon which the laser beam is incident, and a second point, from which the laser beam is outputted, such that the amplification region is located in the optical path between the first point and the second point, wherein the first point and the second point are conjugate to each other, and the laser beam incident upon the first point is amplified while passing through the amplification region at least twice and then transferred to the second point.
Abstract:
A target material refinement device may include a refinement tank to accommodate a target material, a heating section to heat the interior of the refinement tank, and an oxygen-atom removing section to remove oxygen atoms present in the target material.
Abstract:
A target supply device may include a tank including a nozzle, a first electrode provided with a first through-hole and disposed so that a center axis of the nozzle is positioned within the first through-hole, a second electrode that includes a main body portion provided with a second through-hole and a collection portion formed in a cylindrical shape extending in a direction from a circumferential edge of the second through-hole toward the nozzle and that is disposed so that the center axis of the nozzle is positioned within the second through-hole, a third electrode disposed within the tank, and a heating unit configured to heat the second electrode.
Abstract:
A laser system may include: a master oscillator configured to output pulsed laser light; an amplification device for amplifying the pulsed laser light from the master oscillator; a first timing detector configured to detect a first timing at which the master oscillator outputs the pulsed laser light; a second timing detector configured to detect a second timing at which the amplification device discharges; and a controller configured to, based on results of detection by the first timing detector and the second timing detector, control at least one of the first timing and the second timing so that the amplification device discharges when the pulsed laser light passes through a discharge space of the amplification device.
Abstract:
An extreme ultraviolet light source apparatus using a spectrum purity filter capable of obtaining EUV light with high spectrum purity. The apparatus includes a chamber; a target supply unit for supplying a target material; a driver laser using a laser gas containing a carbon dioxide gas as a laser medium, for applying a laser beam to the target material to generate plasma; a collector mirror for collecting and outputting the extreme ultraviolet light radiated from the plasma; and a spectrum purity filter provided in an optical path of the extreme ultraviolet light, for transmitting the extreme ultraviolet light and reflecting the laser beam, the spectrum purity filter including a mesh having electrical conductivity and formed with an arrangement of apertures having a pitch not larger than a half of a shortest wavelength of the laser beam applied by the driver laser.
Abstract:
An extreme ultraviolet light generation apparatus may include a droplet production device configured to produce a droplet of a target substance in a predetermined traveling direction, a first laser device configured to generate a first laser beam and irradiate the droplet with the first laser beam to diffuse the droplet, a second laser device configured to generate a second laser beam and irradiate the target substance diffused by irradiation of the first laser beam with the second laser beam to produce plasma of the diffused target substance and generate extreme ultraviolet light from the plasma of the target substance, and a beam shaping unit configured to elongate a beam spot of the first laser beam in the traveling direction of the droplet produced by the droplet production device.
Abstract:
An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.
Abstract:
A pulse width expansion apparatus according to an aspect of the present disclosure includes a polarization beam splitter and a transfer optical system. The transfer optical system includes ¼-wavelength and reflection mirror pairs. The ¼-wavelength mirror pair include first and second ¼-wavelength mirrors. The first ¼-wavelength mirror provides ¼-wavelength phase shift and reflects a pulse laser beam. The second ¼-wavelength mirror provides ¼-wavelength phase shift and reflects the pulse laser beam reflected by the first ¼-wavelength mirror. The reflection mirror pair are disposed on an optical path before and after or between the ¼-wavelength mirror pair. The transfer optical system transfers an image of an input pulse laser beam on the polarization beam splitter to the optical path between the ¼-wavelength mirror pair at one-to-one magnification as a first transfer image and transfers the first transfer image to the polarization beam splitter at one-to-one magnification as a second transfer image.